NTLJD3183CZ

NTLJD3183CZ Power MOSFET Features 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS(on) in 2x2 mm Package Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ESD Protected This is a Pb−Free Device V(BR)DSS N−Channel 20 V http://onsemi.com RDS(on) MAX 68 mW @ 4.5 V 86 mW @ 2.5 V 120 mW @ 1.8 V P−Channel −20 V 100 mW @ −4.5 V 144 mW @ −2.5 V 200 mW @ −1.8 V ID MAX 4.7 A 4.2 A 3.5 A −4.0 A −3.3 A −2.8 A Applications • Optimized for Battery and Load Management Applications in • • • Portable Equipment Load Switch Level Shift Circuits DC−DC Converters D2 D1 WDFN6 CASE 506AN MARKING DIAGRAM 1 JNMG 2 G 3 6 5 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Steady Continuous Drain State Current (Note 1) t≤5s P−Channel Steady Continuous Drain State Current (Note 1) t≤5s Steady Power Dissipation State (Note 1) t≤5s N−Channel Continuous Drain Current (Note 2) P−Channel Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State Steady State Symbol VDSS VGS ID Value 20 ±8.0 3.8 2.7 4.7 −3.2 −2.3 −4.0 1.5 2.3 2.6 1.9 ID PD IDM TJ, TSTG TL −2.2 −1.6 0.71 18 −16 −55 to 150 260 W A °C °C A D2 3 Unit V V A Pin 1 TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C JN = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ID A PIN CONNECTIONS S1 G1 D1 1 2 D2 4 (Top View) S2 6 5 D1 G2 PD W ID A Steady TA = 25°C State N−Ch Pulsed Drain Current tp = 10 ms P−Ch Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION Device NTLJD3183CZTAG NTLJD3183CZTBG Package Shipping† WDFN6 3000/Tape & Reel (Pb−Free) WDFN6 3000/Tape & Reel (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: NTLJD3183CZ/D NTLJD3183CZ THERMAL RESISTANCE RATINGS Parameter SINGLE OPERATION (SELF−HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ 5 s (Note 3) DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA RqJA RqJA 58 133 40 °C/W RqJA RqJA RqJA 83 177 54 °C/W Symbol Max Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ IDSS N P Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current N P N P N P Gate−to−Source Leakage Current IGSS N P ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS(TH)/TJ RDS(on) N P Gate Threshold Temperature Coefficient Drain−to−Source On Resistance N P N P N P N P Forward Transconductance gFS N P VGS = VDS Ref to 25°C ID = 250 mA ID = −250 mA ID = 250 mA ID = −250 mA 0.4 −0.4 −3.0 2.0 34 68 42 90 53 125 7.0 6.5 68 100 86 144 120 200 S mW 1.0 −1.0 mV/°C V VGS = 0 V Ref to 25°C VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V ID = 250 mA ID = −250 mA ID = 250 mA ID = −250 mA TJ = 25°C TJ = 85°C 20 −20 15 13 1.0 −1.0 10 −10 ±10 ±10 mA mA mV/°C V Symbol N/P Test Conditions Min Typ Max Unit VDS = 0 V, VGS = ±8.0 V VGS = 4.5 V , ID = 2.0 A VGS = −4.5 V , ID = −2.0 A VGS = 2.5 V , ID = 2.0 A VGS = −2.5 V, ID = −2.0 A VGS = 1.8 V , ID = 1.7 A VGS = −1.8 V, ID = −1.7 A VDS = 5.0 V, ID = 2.0 A VDS = −5.0 V , ID = −2.0 A http://onsemi.com 2 NTLJD3183CZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS COSS CRSS QG(TOT) QG(TH) QGS QGD N P Output Capacitance N P Reverse Transfer Capacitance N P Total Gate Charge N P Threshold Gate Charge N P Gate−to−Source Charge N P Gate−to−Drain Charge N P SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD N P N P Reverse Recovery Time tRR ta tb QRR N P Charge Time N P Discharge Time N P Reverse Recovery Charge N P 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. VGS = 0 V, dIS / dt = 100 A/ms IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A IS = 1.0 A IS = −1.0 A P VGS = −4.5 V, VDD = −5 V, ID = −2.0 A, RG = 2.0 W N VGS = 4.5 V, VDD = 5 V, ID = 2.0 A, RG = 2.0 W 6.2 5.5 15 14 6.6 9.0 14 12.5 ns f = 1.0 MHz, VGS = 0 V VDS = 10 V VDS = −10 V VDS = 10 V VDS = −10 V VDS = 10 V VDS = −10 V VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −3.8 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −3.8 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −3.8 A VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = −4.5 V, VDS = −10 V, ID = −3.8 A 355 450 70 90 50 62 4.6 5.2 0.3 0.3 0.6 0.84 1.15 1.5 7.0 7.8 nC pF DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, TJ = 25 °C VGS = 0 V, TJ = 125 °C 0.65 −0.73 0.55 −0.62 21 23 10.5 13 10.5 10 7.0 10 nC ns 1.0 −1.0 V http://onsemi.com 3 NTLJD3183CZ N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 8 6 TJ = 25°C 4 2 0 1.4 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 2 V to 5 V 1.8 V 1.6 V 10 8 6 4 2 0 TJ = 25°C TJ = 125°C 0 0.5 1 TJ = −55°C 1.5 2 2.5 3 VDS ≥ 5 V 1.2 V 1.0 V 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.12 Figure 2. Transfer Characteristics VGS = 4.5 V TJ = 25°C 0.10 0.08 0.06 0.04 0.02 0 VGS = 2.5 V VGS = 4.5 V 0.06 TJ = 125°C 0.04 TJ = 25°C 0.02 TJ = −55°C 0 2.0 VGS = 1.8 V 4.0 6.0 8.0 1 2 3 4 5 6 7 8 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 VGS = 0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.75 1.5 ID = 2 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000 1.25 1.0 TJ = 150°C 1000 TJ = 125°C 0.75 0.5 −50 100 −25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 NTLJD3183CZ N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 800 600 400 Crss 200 Coss 0 10 5 0 5 10 15 20 Ciss TJ = 25°C VDS = VGS = 0 V 5 QT 4 3 2 1 0 C, CAPACITANCE (pF) VGS QGS QGD ID = 3.8 A TJ = 25°C 0 1 3 2 4 QG, TOTAL GATE CHARGE (nC) 5 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 100 tf td(off) tr td(on) IS, SOURCE CURRENT (AMPS) VDD = 5.0 V ID = 2.0 A VGS = 4.5 V t, TIME (ns) 2.5 2 VGS = 0 V TJ = 25°C 1.5 1 0.5 0 0 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.6 0.2 0.4 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID, DRAIN CURRENT (AMPS) Figure 10. Diode Forward Voltage versus Current 10 100 ms 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 0.1 dc 0.01 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTLJD3183CZ P−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 −ID, DRAIN CURRENT (AMPS) −2.2 V VGS = −2.5 V to −5 V TJ = 25°C −2.0 V −1.8 V −1.6 V −1.4 V −1.2 V 0 −1.0 V 0 1 2 3 4 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS) 8 VDS ≥ 5 V 6 6 4 4 2 2 TJ = 25°C TJ = 125°C TJ = −55°C 1.5 2 2.5 3 0 0 0.5 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 12. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.12 0.1 0.08 0.06 0.04 0.02 2.0 TJ = 25°C TJ = −55°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 1.5 Figure 13. Transfer Characteristics VGS = −4.5 V TJ = 125°C TJ = 25°C VGS = −1.8 V VGS = −2.5 V VGS = −4.5 V 2.5 3.5 4.5 5.5 6.5 7.5 4.0 6.0 8.0 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 14. On−Resistance versus Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.75 1.5 100000 ID = −2 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 10000 Figure 15. On−Resistance versus Drain Current and Gate Voltage VGS = 0 V 1.25 1.0 TJ = 150°C 1000 TJ = 125°C 0.75 0.5 −50 −25 0 25 50 75 100 125 150 100 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 16. On−Resistance Variation with Temperature Figure 17. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 6 NTLJD3183CZ P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 600 TJ = 25°C VGS = 0 V Ciss 5 QT 4 3 2 1 0 QGS QGD C, CAPACITANCE (pF) 400 VGS 200 Coss 0 0 Crss 5 10 15 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 ID = −3.8 A TJ = 25°C 0 1 3 5 2 4 QG, TOTAL GATE CHARGE (nC) 6 Figure 18. Capacitance Variation Figure 19. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 2 −IS, SOURCE CURRENT (AMPS) 1000 VDD = −5.0 V ID = −2.0 A VGS = −4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on) VGS = 0 V TJ = 25°C 1.5 1 0.5 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0 0.6 0.2 0.4 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.0 Figure 20. Resistive Switching Time Variation versus Gate Resistance 100 −ID, DRAIN CURRENT (AMPS) Figure 21. Diode Forward Voltage versus Current 10 100 ms 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 0.1 dc 0.01 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 Figure 22. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 7 NTLJD3183CZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 D = 0.5 0.2 0.1 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 1 t1 P(pk) *See Note 2 on Page 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 100 10 100 1000 Figure 23. Thermal Response http://onsemi.com 8 NTLJD3183CZ PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN−01 ISSUE D D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e F K L L1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.67 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.30 0.20 --0.10 EXPOSED Cu MOLD CMPD PLATING 0.10 C 0.10 C 0.10 C 0.08 C NOTE 4 L DETAIL A K e ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ÍÍÍ ÍÍÍ ÍÍÍ DETAIL B PIN ONE REFERENCE E TOP VIEW A3 A A1 C SIDE VIEW 0.10 C A D2 1 3 D2 F 6X E2 0.10 C A 6 4 6X b 0.10 C A 0.05 C B 6X NOTE 3 BOTTOM VIEW ÉÉ ÇÇÇ ÇÇ ÉÉÉ ÇÇÇ DETAIL B OPTIONAL CONSTRUCTIONS L L1 OPTIONAL CONSTRUCTIONS L DETAIL A SEATING PLANE SOLDERMASK DEFINED MOUNTING FOOTPRINT 1.74 0.77 1.10 0.47 2.30 B PACKAGE OUTLINE 2X B 1 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS http://onsemi.com 9 NTLJD3183CZ/D