NTLUS3192PZTBG

NTLUS3192PZ Advance Information Power MOSFET −20 V, −4.2 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • • • Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected This is a Halide Free Device This is a Pb−Free Device http://onsemi.com MOSFET V(BR)DSS −20 V Applications • High Side Load Switch • PA Switch and Battery Switch • Optimized for Power Management Applications for Portable RDS(on) MAX ID MAX 85 mW @ −4.5 V −3.0 A 115 mW @ −2.5 V −1.5 A 160 mW @ −1.8 V −0.5 A 250 mW @ −1.5 V −0.2 A S Products, such as Cell Phones, PMP, DSC, GPS, and others G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C t≤5s Continuous Drain Current (Note 2) Steady State ID TA = 85°C A −3.4 MARKING DIAGRAM −2.4 −4.2 PD TA = 25°C TA = 25°C 1 −2.2 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD 1000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. This document contains information on a new product. Specifications and information herein are subject to change without notice. 1 AA MG G (Note: Microdot may be in either location) −1.6 PD May, 2009 − Rev. P3 1 AA = Specific Device Code M = Date Code G = Pb−Free Package TA = 25°C © Semiconductor Components Industries, LLC, 2009 UDFN6 CASE 517AU mCOOLt A Power Dissipation (Note 2) Gate-to-Source ESD Rating (HBM) per JESD22−A114F 6 W 1.5 2.3 ID TA = 85°C Operating Junction and Storage Temperature D P−Channel MOSFET (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTLUS3192PZ/D NTLUS3192PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 3) RθJA 85 °C/W Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 55 RθJA 200 Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min −20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = −20 V V 14 mV/°C TJ = 25°C −1.0 TJ = 85°C −10 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA 10 mA mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance −0.4 VGS(TH)/TJ RDS(on) Forward Transconductance −1.0 2.5 VGS = −4.5 V, ID = −3.0 A gFS 65 V mV/°C 85 mW VGS = −2.5 V, ID = −1.5 A 90 115 VGS = −1.8 V, ID = −0.5 A 120 160 VGS = −1.5 V, ID = −0.2 A 160 250 VDS = −5.0 V, ID = −0.2 A 2.0 S 450 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = −10 V 85 65 5.5 VGS = −4.5 V, VDS = −10 V; ID = −3.0 A 8.5 nC 0.3 0.8 1.6 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) 26 tr 69 Rise Time Turn-Off Delay Time td(OFF) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −3.0 A, RG = 1 W tf ns 225 200 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 3. 4. 5. 6. VGS = 0 V, IS = −1.0 A TJ = 25°C 0.72 TJ = 85°C 0.7 11 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A QRR http://onsemi.com 2 V ns 8.0 3.0 6.0 Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTLUS3192PZ TYPICAL CHARACTERISTICS 20 −ID, DRAIN CURRENT (A) −3.5 V 14 −2.5 V 12 10 −2.0 V 8 −1.8 V 6 −1.5 V 4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4 0.175 0.150 ID = −3.0 A 0.125 ID = −0.2 A 1.5 2.0 2.5 3.0 3.5 4.0 −VGS, GATE VOLTAGE (V) 2 4.5 0.5 1.0 1.5 2.0 2.5 −1.5 V 0.225 TJ = 25°C −1.8 V 0.200 3.0 −2.5 V 0.175 0.150 0.125 0.100 VGS = −4.5 V 0.075 0.050 0.025 0 0 2 4 6 8 10 12 14 16 18 20 −ID, DRAIN CURRENT (A) 100,000 VGS = −4.5 V ID = −3.0 A −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 0 TJ = −55°C Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.4 TJ = 125°C 0.250 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 TJ = 25°C 3 Figure 2. Transfer Characteristics TJ = 25°C 1.0 5 Figure 1. On−Region Characteristics 0.200 0.050 6 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.225 0.075 7 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.250 0.100 VDS ≤ −10 V 8 1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 9 −4.0 V 16 2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 −3.0 V VGS = −4.5 V 18 1.3 1.2 1.1 1.0 0.9 TJ = 150°C 10,000 TJ = 125°C 1000 TJ = 85°C 100 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTLUS3192PZ VGS = 0 V TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) 600 Ciss 500 400 300 200 Coss 100 0 Crss 0 2 4 6 8 10 12 14 18 16 20 5 10 4 6 QGS 2 QGD 0 0 4 VDS = −10 V TJ = 25°C ID = −3.0 A 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2 0 5.0 5.5 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = −4.5 V VDD = −10 V ID = −3.0 A −IS, SOURCE CURRENT (A) 1000 t, TIME (ns) 8 3 Figure 7. Capacitance Variation td(off) tf 100 tr td(on) 1 10 TJ = 150°C TJ = 25°C 0.1 100 TJ = 125°C 1 TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.80 225 0.75 ID = −250 mA 200 0.70 175 POWER (W) 0.65 −VGS(th) (V) VGS VDS −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 12 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 700 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0.60 0.55 0.50 0.45 150 125 100 75 0.40 50 0.35 0.30 −50 25 −25 0 25 50 75 100 125 0 1.E−05 150 1.E−03 1.E−01 1.E+01 1.E+03 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTLUS3192PZ TYPICAL CHARACTERISTICS −ID, DRAIN CURRENT (A) 100 VGS = −8 V Single Pulse TC = 25°C 10 10 ms 100 ms 1 1 ms 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 100 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 90 RqJA = 85°C/W 80 70 60 50 Duty Cycle = 0.5 40 30 20 0.2 0.05 0.02 0.01 10 0.1 0 1E−06 Single Pulse 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 t, TIME (s) Figure 14. FET Thermal Response DEVICE ORDERING INFORMATION Package Shipping† NTLUS3192PZTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUS3192PZTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AU−01 ISSUE O 6 DATE 16 OCT 2008 1 SCALE 4:1 A B D 2X PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ E DETAIL A OPTIONAL CONSTRUCTION A DETAIL B 0.05 C (A3) A1 0.05 C A1 C SIDE VIEW F 3 1 DETAIL B SEATING PLANE D2 DETAIL A G 6X XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) b D1 0.10 C A B 0.05 C BOTTOM VIEW NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERMASK DEFINED MOUNTING FOOTPRINT* 0.82 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 0.62 0.72 0.15 0.25 0.57 0.67 0.55 BSC 0.25 BSC 0.20 0.30 −−− 0.15 1 E2 0.10 C A B 4 A3 DIM A A1 A3 b D E e D1 D2 E2 F G L L1 GENERIC MARKING DIAGRAM* L 6 MOLD CMPD OPTIONAL CONSTRUCTION e 0.10 C A B 6X ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW NOTE 4 L1 L 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.16 0.43 0.68 2X 0.35 1.90 0.28 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON35147E UDFN6, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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