NTLUS3A90PZTAG

NTLUS3A90PZ MOSFET – Power, Single, P-Channel, ESD, mCool, UDFN, 1.6x1.6x0.55 mm -20 V, -5.0 A http://onsemi.com Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET V(BR)DSS RDS(on) MAX ID MAX 62 mW @ −4.5 V 95 mW @ −2.5 V −20 V −5.0 A 140 mW @ −1.8 V 230 mW @ −1.5 V Applications S • High Side Load Switch • PA Switch and Battery Switch • Optimized for Power Management Applications for Portable G Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) D Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V ID −4.0 A Parameter Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C −2.9 t≤5s TA = 25°C −5.0 Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 25°C PD ID W 1.5 1 AD MG G AD = Specific Device Code M = Date Code G = Pb−Free Package −1.9 PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −0.84 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. May, 2019 − Rev. 2 UDFN6 CASE 517AU mCOOLt A −2.6 TA = 25°C © Semiconductor Components Industries, LLC, 2010 6 (Note: Microdot may be in either location) Power Dissipation (Note 2) Operating Junction and Storage Temperature MARKING DIAGRAM 1 2.3 TA = 85°C P−Channel MOSFET 1 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTLUS3A90PZ/D NTLUS3A90PZ THERMAL RESISTANCE RATINGS Symbol Max Units Junction-to-Ambient – Steady State (Note 3) RθJA 84 °C/W Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 55 RθJA 200 Parameter Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min −20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = −20 V V −8.0 mV/°C TJ = 25°C −1.0 TJ = 85°C −10 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA ±10 mA mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance −0.4 VGS(TH)/TJ −1.0 3.0 RDS(on) VGS = −4.5 V, ID = −4.0 A gFS 54 V mV/°C 62 mW VGS = −2.5 V, ID = −2.0 A 74 95 VGS = −1.8 V, ID = −1.2 A 104 140 VGS = −1.5 V, ID = −0.5 A 137 230 VDS = −10 V, ID = −3.0 A 10 S 950 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = −10 V 90 85 nC 12.3 VGS = −4.5 V, VDS = −10 V; ID = −3.0 A 0.9 1.6 3.3 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) 7.9 tr 15.7 Rise Time Turn-Off Delay Time td(OFF) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −3.0 A, RG = 1 W tf ns 34.8 28.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 3. 4. 5. 6. VGS = 0 V, IS = −1.0 A TJ = 25°C 0.74 TJ = 125°C 0.62 11.8 VGS = 0 V, dis/dt = 100 A/ms, IS = −1.0 A QRR http://onsemi.com 2 V ns 8.5 3.3 6.0 Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTLUS3A90PZ TYPICAL CHARACTERISTICS 14 −2.0 V 10 −1.8 V 8 6 4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6 TJ = 25°C 4 TJ = 125°C 0 0.5 TJ = −55°C 1.0 1.5 2.0 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = −4.0 A 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3.0 TJ = 25°C 0.180 −1.5 V −1.8 V 0.140 −2.5 V 0.100 0.060 0.020 VGS = −4.5 V 0 2 4 6 10 8 12 14 18 16 20 −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.6 1.5 1.4 VGS = −4.5 V ID = −4.0 A −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.18 1.0 10 0 4.5 0.20 0.00 12 2 −1.5 V 0 VDS ≤ −10 V 14 −3.0 V −2.5 V 12 2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −3.5 V 16 16 VGS = −4.5 V −4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 18 −ID, DRAIN CURRENT (A) 20 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 1000 TJ = 85°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTLUS3A90PZ C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C f = 1 MHz 1600 1200 Ciss 800 400 0 Coss Crss 0 2 4 6 8 10 12 14 18 16 20 5 10 4 VDS QGS 2 6 QGD VDS = −10 V ID = −3.0 A TJ = 25°C 1 0 0 2 4 8 6 10 12 2 0 14 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = −4.5 V VDD = −15 V ID = −3.0 A −IS, SOURCE CURRENT (A) 100 1000 t, TIME (ns) 8 4 Figure 7. Capacitance Variation td(off) 100 tf tr 10 td(on) 1 10 TJ = 125°C 10 TJ = 25°C 1 100 TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 225 ID = −250 mA 0.75 200 175 POWER (W) 0.65 −VGS(th) (V) VGS 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1 12 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0.55 0.45 0.35 150 125 100 75 50 0.25 0.15 −50 25 −25 0 25 50 75 100 125 0 1.E−05 150 1.E−03 1.E−01 1.E+01 1.E+03 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTLUS3A90PZ TYPICAL CHARACTERISTICS −ID, DRAIN CURRENT (A) 100 10 ms 10 100 ms 1 0.1 0.01 1 ms VGS = −8 V Single Pulse TC = 25°C 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 90 RqJA = 84°C/W 80 70 60 50 Duty Cycle = 0.5 40 30 20 0.2 0.05 0.02 0.01 10 0.1 0 1E−06 Single Pulse 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 t, TIME (s) Figure 14. FET Thermal Response DEVICE ORDERING INFORMATION Package Shipping† NTLUS3A90PZTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUS3A90PZTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AU−01 ISSUE O 6 DATE 16 OCT 2008 1 SCALE 4:1 A B D 2X PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ E DETAIL A OPTIONAL CONSTRUCTION A DETAIL B 0.05 C (A3) A1 0.05 C A1 C SIDE VIEW F 3 1 DETAIL B SEATING PLANE D2 DETAIL A G 6X XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) b D1 0.10 C A B 0.05 C BOTTOM VIEW NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERMASK DEFINED MOUNTING FOOTPRINT* 0.82 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 0.62 0.72 0.15 0.25 0.57 0.67 0.55 BSC 0.25 BSC 0.20 0.30 −−− 0.15 1 E2 0.10 C A B 4 A3 DIM A A1 A3 b D E e D1 D2 E2 F G L L1 GENERIC MARKING DIAGRAM* L 6 MOLD CMPD OPTIONAL CONSTRUCTION e 0.10 C A B 6X ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW NOTE 4 L1 L 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.16 0.43 0.68 2X 0.35 1.90 0.28 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON35147E UDFN6, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative