NTMFD4901NFT1G

NTMFD4901NF MOSFET – Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 30 A http://onsemi.com Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V 18 A 10 mW @ 4.5 V Q2 Bottom FET 30 V 2.35 mW @ 10 V 30 A 3.5 mW @ 4.5 V D1 Applications • DC−DC Converters • System Voltage Rails • Point of Load ID MAX (2, 3, 4, 9) (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS 5 S2 D1 4 D1 3 9 D1 D1 2 6 S2 10 S1/D2 7 S2 8 G2 G1 1 (Bottom View) MARKING DIAGRAM 1 DFN8 CASE 506BX 4901NF AYWZZ 1 4901NF A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 6 1 Publication Order Number: NTMFD4901NF/D NTMFD4901NF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 13.5 TA = 85°C TA = 25°C 9.7 Q2 23.4 TA = 85°C TA = 25°C Power Dissipation RqJA (Note 1) 16.9 Q1 PD Q2 Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C Q1 Steady State ID TA = 25°C 30.3 TA = 25°C Q1 PD Q1 ID TA = 25 °C 17.9 TA = 25°C tp = 10 ms Operating Junction and Storage Temperature A 12.9 Q1 PD Q2 Pulsed Drain Current W 10.3 7.4 Q2 TA = 85°C Power Dissipation RqJA (Note 2) 3.45 3.45 TA = 85°C TA = 25°C A 21.8 Q2 Continuous Drain Current RqJA (Note 2) W 18.2 13.1 Q2 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) 1.90 2.07 TA = 85°C TA = 25°C A Q1 W 1.20 IDM 60 TJ, TSTG −55 to +150 °C IS 3.4 A Q2 Q1 1.10 A 100 Q2 Source Current (Body Diode) Q1 Q2 Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W) 4.9 dV/dt 6 V/ns 28.8 mJ 24 A Q1 EAS 48 A Q2 EAS 115 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. http://onsemi.com 2 NTMFD4901NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) FET Symbol Value Q1 RqJA 65.9 Q2 Junction−to−Ambient – Steady State (Note 4) 60.5 Q1 RqJA 113.2 Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Unit °C/W 104 Q1 RqJA 36.2 Q2 36.2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Drain−to−Source Breakdown Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS = 0 V, ID = 1 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Zero Gate Voltage Drain Current Q1 Typ Max Unit OFF CHARACTERISTICS Q2 Q2 V(BR)DSS / TJ IDSS Q2 Gate−to−Source Leakage Current Q1 mV / °C 18 15 VGS = 0 V, VDS = 24 V TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 500 VGS = 0 V, VDS = 24 V IGSS V VGS = 0 V, VDS = ±20 V ±100 Q2 mA nA ±100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 VGS(TH) / TJ RDS(on) Q2 Forward Transconductance Q1 gFS 1.2 2.2 1.2 2.2 mV / °C 4.5 4.0 VGS = 10 V ID = 10 A 5.2 6.5 VGS = 4.5 V ID = 10 A 8.0 10 VGS = 10 V ID = 20 A 1.9 2.35 VGS = 4.5 V ID = 20 A 2.8 3.5 VDS = 1.5 V, ID = 10 A Q2 28 45 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 V mW S NTMFD4901NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 1150 CISS COSS 2950 VGS = 0 V, f = 1 MHz, VDS = 15 V 1100 pF 105 CRSS 82 9.7 QG(TOT) 20 1.1 QG(TH) VGS = 4.5 V, VDS = 15 V; ID = 10 A QGS 2.7 3.3 nC 7.3 3.7 QGD QG(TOT) 360 5.3 VGS = 10 V, VDS = 15 V; ID = 10 A 19.1 42.7 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 tr Q2 Q1 Q2 9.0 td(ON) 14 15 VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W td(OFF) Q1 14 ns 25 4.0 tf Q2 16 7.0 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6.0 td(ON) tr 10 14 VGS = 10 V, VDS = 15 V, ID = 10 A, RG = 3.0 W td(OFF) 15 17 32 3.0 tf 5.0 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 4 ns NTMFD4901NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max TJ = 25°C 0.75 1.0 TJ = 125°C 0.62 TJ = 25°C 0.45 TJ = 125°C 0.37 Unit DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3 A Q1 Forward Voltage VSD Q2 Reverse Recovery Time Q1 Q2 Q1 Charge Time Q2 Q1 Discharge Time Q2 Reverse Recovery Charge Q1 Q2 VGS = 0 V, IS = 2 A 0.70 V 23 tRR 40 12 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 3 A tb 21 ns 11 19 12 QRR 40 nC PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.38 LS 0.65 0.054 LD TA = 25°C LG 0.007 1.5 1.5 0.8 RG 0.8 nH nH nH W 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTMFD4901NFT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4901NFT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTMFD4901NF TYPICAL CHARACTERISTICS − Q1 3.8 V ID, DRAIN CURRENT (A) 35 50 3.6 V 3.4 V 4.5 V 10 V 30 TJ = 25°C 25 20 3.0 V 10 2.8 V 5 VGS = 2.4 V 0 1 2 3 4 TJ = 125°C 25 20 15 10 TJ = 25°C TJ = −55°C 0 1 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 3 4 5 6 7 8 9 10 0.010 T = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 0 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Resistance Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 10,000 ID = 10 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) 1.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 30 0 5 ID = 10 A TJ = 25°C 2 35 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0.002 40 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.2 V 15 VDS ≥ 5 V 45 ID, DRAIN CURRENT (A) 40 1.4 1.2 1.0 1,000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 30 NTMFD4901NF TYPICAL CHARACTERISTICS − Q1 Ciss 1200 1000 800 Coss 600 400 Crss 200 0 5 10 15 20 25 30 QT 9 8 7 6 5 4 Qgs Qgd 3 2 1 0 ID = 10 A TJ = 25°C 0 2 4 6 8 10 12 14 18 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 20 10 1000 VGS = 10 V VDD = 15 V ID = 10 A 9 td(off) 100 tr 10 td(on) tf 1 11 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 0 t, TIME (ns) TJ = 25°C VGS = 0 V VGS = 0 V 8 7 6 5 4 3 TJ = 25°C 2 1 1 10 0 0.0 100 0.1 0.3 0.2 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1600 100 10 ms 10 100 ms 1 ms 10 ms 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C Single Pulse 1 0.1 0.01 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 7 100 0.9 NTMFD4901NF TYPICAL CHARACTERISTICS − Q1 100 Thermal Resistance, RqJA (°C/W) D = 0.5 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 12. Thermal Response http://onsemi.com 8 1 10 100 1000 NTMFD4901NF TYPICAL CHARACTERISTICS − Q2 3.4 V 45 3.0 V 35 30 25 2.8 V 20 15 10 5 VGS = 2.4 V 0 1 2 3 4 5 TJ = 125°C 30 20 TJ = 25°C 10 TJ = −55°C 0.005 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 3 10 3.5 0.0035 0.0030 VGS = 4.5 V 0.0025 0.0020 VGS = 10 V 0.0015 0.0010 0 5 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (A) Figure 16. On−Resistance vs. Drain Current and Gate Voltage 1E−2 ID = 20 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.5 0.0040 Figure 15. On−Resistance vs. Gate−to−Source Resistance 1.4 1.2 1.0 1E−3 TJ = 125°C 1E−4 1E−5 0.8 0.6 −50 2 Figure 14. Transfer Characteristics 0.010 1.6 1.5 1 Figure 13. On−Region Characteristics 0.015 1.8 0.5 0 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 10 A TJ = 25°C 2 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0 VDS ≥ 5 V 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 60 TJ = 25°C 4.5 V 10 V 40 ID, DRAIN CURRENT (A) 3.2 V ID, DRAIN CURRENT (A) 50 TJ = 25°C −25 0 25 50 75 100 125 150 1E−6 0 5 10 15 VGS = 0 V 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 17. On−Resistance Variation with Temperature Figure 18. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 9 30 NTMFD4901NF TYPICAL CHARACTERISTICS − Q2 Ciss 3000 2500 2000 Coss 1500 1000 500 Crss 0 5 10 15 20 25 30 11 QT 10 9 8 7 6 5 4 Qgd Qgs 3 2 1 0 ID = 10 A TJ = 25°C 0 5 10 15 20 25 30 35 45 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 19. Capacitance Variation Figure 20. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 1000 VGS = 10 V VDD = 15 V ID = 10 A 9 IS, SOURCE CURRENT (A) 0 t, TIME (ns) TJ = 25°C VGS = 0 V td(off) 100 tr td(on) 10 tf 8 VGS = 0 V TJ = 25°C 7 6 5 4 3 2 1 1 1 10 100 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 21. Resistive Switching Time Variation vs. Gate Resistance Figure 22. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 3500 VGS, GATE−TO−SOURCE VOLTAGE (V) 4000 100 10 ms 10 100 ms 1 ms 10 ms 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C Single Pulse 1 0.1 0.01 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 23. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 10 100 NTMFD4901NF TYPICAL CHARACTERISTICS − Q2 100 Thermal Resistance, RqJA (°C/W) D = 0.5 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 24. Thermal Response http://onsemi.com 11 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical) CASE 506BX ISSUE D DATE 24 JUN 2014 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SURFACE 6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 2X 0.20 C D A D1 8 ÉÉ ÉÉ 1 2 2X 0.20 C 5 E1 E 4X h NOTE 6 PIN ONE IDENTIFIER B NOTE 6 7 6 3 c 4 DIM A A1 b b1 c D D1 D2 E E1 E2 E3 e h k k1 k2 L A1 NOTE 7 TOP VIEW 0.10 C DETAIL A A 0.10 C NOTE 4 C SIDE VIEW DETAIL A e DETAIL B e/2 1 SEATING PLANE 4 8X E3 k k1 k2 E2 8 0.10 REF DETAIL B 5 D2 BOTTOM VIEW 8X MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.41 0.61 0.41 0.61 0.23 0.33 5.00 5.30 4.50 5.10 3.50 4.22 6.00 6.30 5.50 6.10 2.27 2.67 0.82 1.22 1.27 BSC −−− 12 _ 0.39 0.59 0.56 0.76 0.73 0.93 0.35 0.55 GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability b 0.10 C A B 0.05 C NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. 6X b1 NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* L PACKAGE OUTLINE STYLE 1: PIN 1. GATE 1 2. DRAIN 1 3. DRAIN 1 4. DRAIN 1 5. SOURCE 2 6. SOURCE 2 7. SOURCE 2 8. GATE 2 9. DRAIN 1 10. SOURCE 1/DRAIN 2 5.35 8X 0.69 8X 0.64 1.97 2.68 6.45 2.33 1.22 4X 1.27 PITCH 0.69 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON54291E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL−ASYMMETRICAL) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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