NTMFD4902NFT1G

NTMFD4902NF MOSFET – Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 23 A www.onsemi.com Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 6.5 mW @ 10 V Q1 Top FET 30 V 18 A 10 mW @ 4.5 V Q2 Bottom FET 30 V 4.1 mW @ 10 V 23 A 6.2 mW @ 4.5 V D1 Applications • DC−DC Converters • System Voltage Rails • Point of Load ID MAX (2, 3, 4, 9) (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 D1 3 D1 2 5 S2 9 D1 10 S1/D2 G1 1 6 S2 7 S2 8 G2 (Bottom View) MARKING DIAGRAM 1 DFN8 CASE 506BX 4902NF AYWZZ 1 4902NF A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 May, 2019− Rev. 5 1 Publication Order Number: NTMFD4902NF/D NTMFD4902NF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 13.5 TA = 85°C TA = 25°C 9.7 Q2 17.5 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C 12.6 Q1 PD Q2 Q1 Steady State ID TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C 23 Q1 PD Q1 ID Pulsed Drain Current TA = 25°C tp = 10 ms 13.3 A 9.6 Q1 PD Q2 Operating Junction and Storage Temperature W 10.3 7.4 Q2 TA = 85°C TA = 25 °C 3.45 3.45 TA = 85°C Power Dissipation RqJA (Note 2) A 16.6 Q2 TA = 25°C W 18.2 13.1 Q2 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) 1.90 1.99 TA = 85°C TA = 25°C A Q1 W 1.16 IDM 60 TJ, TSTG −55 to +150 °C IS 3.4 A Q2 Q1 1.10 A 80 Q2 Source Current (Body Diode) Q1 Q2 Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W) 4.9 dV/dt 6.0 V/ns mJ 24 A Q1 EAS 28.8 27 A Q2 EAS 36.5 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4902NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) FET Symbol Value Q1 RqJA 65.9 Q2 Junction−to−Ambient – Steady State (Note 4) 62.8 Q1 RqJA 113.2 Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Unit °C/W 108 Q1 RqJA 36.2 Q2 36.2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Drain−to−Source Breakdown Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS = 0 V, ID = 1.0 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Zero Gate Voltage Drain Current Q1 Typ Max Unit OFF CHARACTERISTICS Q2 Q2 V(BR)DSS / TJ IDSS Q2 Gate−to−Source Leakage Current Q1 mV / °C 18 15 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V IGSS V TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 500 VGS = 0 V, VDS = ±20 V ±100 Q2 mA nA ±100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 VGS(TH) / TJ RDS(on) Q2 Forward Transconductance Q1 gFS 1.2 2.2 1.2 2.2 mV / °C 4.5 4.0 VGS = 10 V ID = 10 A 5.2 6.5 VGS = 4.5 V ID = 10 A 8.0 10 VGS = 10 V ID = 15 A 3.3 4.1 VGS = 4.5 V ID = 15 A 5.0 6.2 VDS = 1.5 V, ID = 10 A Q2 28 V mW S 35 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Capacitance Q1 Q2 Q1 Q2 Q1 Q2 1150 CISS COSS 1590 VGS = 0 V, f = 1 MHz, VDS = 15 V 360 813 pF 105 CRSS 83 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFD4902NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 9.7 QG(TOT) 11.5 1.1 QG(TH) VGS = 4.5 V, VDS = 15 V; ID = 10 A QGS nC 3.3 4.2 3.7 QGD QG(TOT) 1.4 3.4 VGS = 10 V, VDS = 15 V; ID = 10 A 19.1 nC 24.9 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 tr Q2 Q1 Q2 9.0 td(ON) 10.5 15 VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W td(OFF) Q1 ns 14 17.7 4.0 tf Q2 15.2 4.7 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6.0 td(ON) tr 7.0 14 VGS = 10 V, VDS = 15 V, ID = 10 A, RG = 3.0 W td(OFF) 14 ns 17 22 3.0 tf 3.3 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3 A Q1 Forward Voltage VSD Q2 VGS = 0 V, IS = 2 A TJ = 25°C 0.75 TJ = 125°C 0.62 TJ = 25°C 0.37 TJ = 125°C 0.31 1.0 0.70 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 NTMFD4902NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time Q1 Q2 Q1 Charge Time Q2 Q1 Discharge Time Q2 Reverse Recovery Charge Q1 Q2 23 tRR 24.5 12 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 3 A tb 13 ns 11 11.5 12 QRR 24 nC PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.38 LS 0.65 0.054 LD TA = 25°C LG 0.007 1.5 1.5 0.8 RG 0.8 nH nH nH W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTMFD4902NFT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4902NFT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFD4902NF TYPICAL CHARACTERISTICS − Q1 3.8 V ID, DRAIN CURRENT (A) 35 50 3.6 V 3.4 V 4.5 V 10 V 30 TJ = 25°C 25 20 3.0 V 10 2.8 V 5 VGS = 2.4 V 0 1 2 3 4 TJ = 125°C 25 20 15 10 TJ = 25°C TJ = −55°C 0 1 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 3 4 5 6 7 8 9 10 0.010 T = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 0 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Resistance Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 10,000 ID = 10 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) 1.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 30 0 5 ID = 10 A TJ = 25°C 2 35 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0.002 40 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.2 V 15 VDS ≥ 5 V 45 ID, DRAIN CURRENT (A) 40 1.4 1.2 1.0 1,000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 6 30 NTMFD4902NF TYPICAL CHARACTERISTICS − Q1 Ciss 1200 1000 800 Coss 600 400 Crss 200 0 0 5 10 15 20 25 30 QT 9 8 7 6 5 4 Qgs Qgd 3 2 1 0 ID = 10 A TJ = 25°C 0 2 4 6 8 10 12 14 18 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 10 V VDD = 15 V ID = 10 A 9 td(off) 100 tr 10 td(on) tf 1 11 10 20 10 1000 t, TIME (ns) TJ = 25°C VGS = 0 V IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1600 1 VGS = 0 V 8 7 6 5 4 3 TJ = 25°C 2 1 10 0 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 7 0.9 NTMFD4902NF TYPICAL CHARACTERISTICS − Q2 3.4 V 45 35 3.0 V 2.8 V 30 25 20 2.6 V 15 10 2.4 V 5 VGS = 2.2 V 0 1 2 3 4 5 TJ = 125°C 30 20 TJ = 25°C 10 TJ = −55°C 0.005 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 3 3.5 0.006 0.005 VGS = 4.5 V 0.004 0.003 VGS = 10 V 0.002 0.001 0 5 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (A) Figure 14. On−Resistance vs. Drain Current and Gate Voltage 1.8 1E−1 ID = 20 A VGS = 10 V TJ = 150°C 1.5 IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.5 0.007 Figure 13. On−Resistance vs. Gate−to−Source Resistance 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 2 Figure 12. Transfer Characteristics 0.010 1.6 1.5 1 Figure 11. On−Region Characteristics 0.015 1.7 0.5 0 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 15 A TJ = 25°C 2 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0 VDS ≥ 5 V 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 60 TJ = 25°C 4.5 V 10 V 40 ID, DRAIN CURRENT (A) 3.2 V ID, DRAIN CURRENT (A) 50 1E−2 TJ = 125°C 1E−3 VGS = 0 V 1E−4 TJ = 25°C −25 0 25 50 75 100 125 150 1E−5 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. On−Resistance Variation with Temperature Figure 16. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 8 30 NTMFD4902NF TYPICAL CHARACTERISTICS − Q2 TJ = 25°C VGS = 0 V Ciss 1600 Coss 1200 800 400 0 Crss 0 5 10 15 20 25 30 QT 9 8 7 6 5 4 Qgd Qgs 3 VDD = 15 V VGS = 10 V ID = 10 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Qg, TOTAL GATE CHARGE (nC) Figure 17. Capacitance Variation Figure 18. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 1000 VGS = 10 V VDD = 15 V ID = 10 A 9 td(off) 100 tr td(on) 10 tf 1 11 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 2000 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) 2400 1 8 VGS = 0 V TJ = 25°C 7 6 5 4 3 2 1 10 0 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 19. Resistive Switching Time Variation vs. Gate Resistance Figure 20. Diode Forward Voltage vs. Current www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical) CASE 506BX ISSUE D DATE 24 JUN 2014 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SURFACE 6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 2X 0.20 C D A D1 8 ÉÉ ÉÉ 1 2 2X 0.20 C 5 E1 E 4X h NOTE 6 PIN ONE IDENTIFIER B NOTE 6 7 6 3 c 4 DIM A A1 b b1 c D D1 D2 E E1 E2 E3 e h k k1 k2 L A1 NOTE 7 TOP VIEW 0.10 C DETAIL A A 0.10 C NOTE 4 C SIDE VIEW DETAIL A e DETAIL B e/2 1 SEATING PLANE 4 8X E3 k k1 k2 E2 8 0.10 REF DETAIL B 5 D2 BOTTOM VIEW 8X MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.41 0.61 0.41 0.61 0.23 0.33 5.00 5.30 4.50 5.10 3.50 4.22 6.00 6.30 5.50 6.10 2.27 2.67 0.82 1.22 1.27 BSC −−− 12 _ 0.39 0.59 0.56 0.76 0.73 0.93 0.35 0.55 GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability b 0.10 C A B 0.05 C NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. 6X b1 NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* L PACKAGE OUTLINE STYLE 1: PIN 1. GATE 1 2. DRAIN 1 3. DRAIN 1 4. DRAIN 1 5. SOURCE 2 6. SOURCE 2 7. SOURCE 2 8. GATE 2 9. DRAIN 1 10. SOURCE 1/DRAIN 2 5.35 8X 0.69 8X 0.64 1.97 2.68 6.45 2.33 1.22 4X 1.27 PITCH 0.69 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON54291E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL−ASYMMETRICAL) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative