NTMJS1D3N04CTWG

NTMJS1D3N04C Power MOSFET 40 V, 1.3 mW, 235 A, Single N−Channel Features • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK−E Package, Industry Standard These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 235 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 166 Steady State Pulsed Drain Current ID A 41 PD A TJ, Tstg −55 to + 175 °C IS 122 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 19 A) EAS 739 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C 1.3 mW @ 10 V 235 A D (5,8) G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State RqJC 1.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 36 D D D 1D3N04 C AWLYW LFPAK8 CASE 760AA 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter 40 V 1.9 900 Source Current (Body Diode) ID MAX W 3.8 IDM Operating Junction and Storage Temperature Range RDS(ON) MAX 29 TA = 100°C TA = 25°C, tp = 10 ms V(BR)DSS 64 TA = 100°C TA = 25°C W 128 www.onsemi.com S S S G 1D3N04C = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 November, 2018 − Rev. 1 1 Publication Order Number: NTMJS1D3N04C/D NTMJS1D3N04C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 9.6 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 170 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 −8.6 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 1.1 V mV/°C 1.3 145 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 4300 VGS = 0 V, f = 1 MHz, VDS = 25 V 2100 pF 59 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A Threshold Gate Charge QG(TH) 13 Gate−to−Source Charge QGS 20 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 15 VGS = 10 V, VDS = 20 V; ID = 50 A 65 nC 12 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 47 ns 36 9.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.68 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 34 ns 29 92 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMJS1D3N04C 10 V to 6.0 V 5.2 V ID, DRAIN CURRENT (A) 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.0 4.8 V 4.4 V 4.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VDS = 10 V TJ = 25°C TJ = 125°C 0 4 3.5 3 2.5 2 1.5 1 0.5 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.2 6 5 7 1.8 1.6 1.4 VGS = 10 V 1.2 1.0 0.8 0.6 0 20 40 60 100 120 140 160 180 200 80 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 VGS = 10 V ID = 50 A IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 TJ = 25°C 2.0 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.4 1.2 1.0 1.E−04 TJ = 150°C 1.E−05 TJ = 125°C 1.E−06 0.8 0.6 −50 3 Figure 2. Transfer Characteristics 4.5 1.6 2 Figure 1. On−Region Characteristics TJ = 25°C ID = 50 A 1.8 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 5 0 3.0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS TJ = 85°C −25 0 25 50 75 100 125 150 175 1.E−07 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMJS1D3N04C C, CAPACITANCE (pF) 10000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS COSS 1000 CRSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 5 0 15 10 20 25 30 35 40 7 6 QGD QGS 5 4 3 VDS = 20 V ID = 50 A TJ = 25°C 2 1 0 10 0 20 30 40 60 50 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 8 QG, TOTAL GATE CHARGE (nC) 100 tr td(off) td(on) 10 VGS = 10 V VDD = 20 V ID = 50 A tf 1 10 10 TJ = 150°C TJ = 125°C 1.0 0.3 100 0.4 0.5 0.6 TJ = 25°C TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 10 ms 100 TJ = 25°C IPEAK, (A) ID, DRAIN CURRENT (A) QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1.0 10 10 1 TC = 25°C VGS ≤ 10 V Single Pulse 0.1 0.1 0.5 ms 1 ms TJ = 100°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 10 1 1E−4 100 1E−3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−2 NTMJS1D3N04C TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMJS1D3N04CTWG Marking Package Shipping† 1D3N04C LFPAK8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK8 5x6 CASE 760AA ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: XXXXXX A WL Y W DATE 13 AUG 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. 98AON82475G LFPAK8 5x6 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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