NTMS5835NL

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features • • • • Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 9.2 7.4 1.5 1.0 12 9.6 2.6 1.6 48 −55 to +150 20 69 37 260 A °C A mJ A °C W A W Unit V V A http://onsemi.com V(BR)DSS 40 V RDS(ON) MAX 10 mW @ 10 V 14 mW @ 4.5 V D ID MAX 12 A G S N−CHANNEL MOSFET 8 1 SO−8 CASE 751 STYLE 12 A Y WW G MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 5835NL AYWWG G 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Top View = Assembly Location = Year = Work Week = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient − t ≤10 s (Note 1) Junction−to−Foot (Drain) (Note 1) Junction−to−Ambient Steady State (Note 2) Symbol RqJA RqJA RqJF RqJA Value 82 49 21 121 °C/W Unit ORDERING INFORMATION Device NTMS5835NLR2G Package Shipping† SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 sq−in pad (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 1 1 Publication Order Number: NTMS5835NL/D NTMS5835NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGP RG td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A TJ = 25°C TJ = 125°C VGS = 4.5 V, VDS = 20 V, ID = 10 A, RG = 2.5 W VGS = 4.5 V, VDS = 20 V; ID = 10 A VGS = 10 V, VDS = 20 V; ID = 10 A VGS = 0 V, f = 1 MHz, VDS = 20 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A Forward Transconductance VDS = 15 V, ID = 10 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2115 315 220 40 20 Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.9 0.785 26 13 13 17 nC ns 1.2 V 15 45 22 9.0 ns 2.0 7.0 9.5 3.3 1.2 V W 50 23 nC pF VGS = 0 V, VDS = 40 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 40 16 1 100 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.0 1.85 7.0 8.2 10.3 10 3.0 V mV/°C 10 14 mW S Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS5835NL TYPICAL PERFORMANCE CURVES 80 80 TJ = 25°C ID, DRAIN CURRENT (A) 4V 70 60 50 40 30 20 10 5 0 2 TJ = 125°C TJ = 25°C VDS ≥ 5 V 10 V 4.5 V 5.5 V 6.5 V 8.5 V ID, DRAIN CURRENT (A) 60 40 3.6 V 3.4 V 20 3V 0 0 1 2 3 4 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.5 3 3.5 4 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.02 TJ = 25°C 0.025 TJ = 25°C ID = 10 A 0.015 VGS = 4.5 V VGS = 10 V 0.015 0.01 0.005 3 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 VGS = 4.5 V ID = 10 A IDSS, LEAKAGE (nA) 100000 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 0.005 2 6 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10 14 ID, DRAIN CURRENT (A) 18 VGS = 0 V TJ = 150°C 10000 TJ = 125°C 50 25 0 25 50 75 100 125 150 1000 10 20 30 40 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS5835NL TYPICAL PERFORMANCE CURVES 3000 2500 C, CAPACITANCE (pF) Ciss 2000 1500 1000 500 0 Coss Crss 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 ID = 10 A TJ = 25°C 35 QGS QGD VGS VDS, DRAIN−TO−SOURCE (V) 40 1 150 9 VGS, GATE−TO−SOURCE (V) QT TJ = 25°C VGS = 0 V QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDS = 20 V ID = 10 A VGS = 4.5 V t, TIME (ns) tr 100 24 20 16 12 8 4 0 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C tf 10 td(off) td(on) 1 10 RG, GATE RESISTANCE (W) 100 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 10 1 0.1 0.01 VGS = 10 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) dc 100 ms 1 ms 10 ms 10 ms 75 Figure 10. Diode Forward Voltage vs. Current ID = 37 A ID, DRAIN CURRENT (A) 50 25 0.001 0.01 100 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTMS5835NL TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 0.1 0.05 0.02 10 R(t) (°C/W) 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 NTMS5835NL PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− A 8 5 B 1 S 4 0.25 (0.010) M Y M −Y− G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C −Z− H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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