NTMSD2P102LR2G

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Other names and brands may be claimed as the property of others. NTMSD2P102LR2 FETKY™ Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS(on), • • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use Less Component Placement for Board Space Savings SO−8 Surface Mount Package, Mounting Information for SO−8 Package Provided Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.: MOSFET −2.3 AMPERES, −20 VOLTS 90 mW @ VGS = −4.5 V SCHOTTKY DIODE 2.0 AMPERES, 20 VOLTS 580 mV @ IF = 2.0 A Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Value Unit VDSS −20 V Gate−to−Source Voltage − Continuous VGS "10 V Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 175 0.71 −2.3 −1.45 −9.0 °C/W W A A A Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 105 1.19 −2.97 −1.88 −12 °C/W W A A A RqJA PD ID ID IDM 62.5 2.0 −3.85 −2.43 −15 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −5.0 Apk, L = 28 mH, RG = 25 W) EAS 350 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL G 1 8 2 7 6 3 4 5 C C D D TOP VIEW MARKING DIAGRAM & PIN ASSIGNMENTS Anode Anode 1 8 2 7 3 Source 4 6 5 Cathode Cathode Drain Drain (Top View) E2P102 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION °C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State. 3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. May, 2006− Rev. 3 S SO−8 CASE 751 STYLE 18 Gate Thermal Resistance, Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) A 1 E2P102 AYWW G Symbol Drain−to−Source Voltage © Semiconductor Components Industries, LLC, 2006 A 8 1 Device Package Shipping† NTMSD2P102LR2 SO−8 2500/Tape & Reel NTMSD2P102LR2G SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMSD2P102LR2/D NTMSD2P102LR2 SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 20 V Average Forward Current (Note 5) (Rated VR, TA = 100°C) IO 1.0 A Peak Repetitive Forward Current (Note 5) (Rated VR, Square Wave, 20 kHz, TA = 105°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Note 5) (Surge Applied at Rated Load Conditions, Half−Wave, Single Phase, 60 Hz) IFSM 20 A Rating ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 6) Symbol Characteristic Min Typ Max −20 − − −12.7 − − − − − − −1.0 −25 − − −2.0 − − −100 − − 100 −0.5 − −0.90 2.5 −1.5 − − − − 0.070 0.100 0.110 0.090 0.130 0.150 − 4.2 − Ciss − 550 750 Coss − 200 300 Crss − 100 175 Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) IDSS Gate−Body Leakage Current (VGS = −10 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −2.4 Adc) (VGS = −2.7 Vdc, ID = −1.2 Adc) (VGS = −2.5 Vdc, ID = −1.2 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −1.2 Adc) Vdc mV/°C W gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance 5. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 6. Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 pF NTMSD2P102LR2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) (Note 7) Characteristic Symbol Min Typ Max Unit td(on) − 10 20 ns tr − 35 65 td(off) − 33 60 SWITCHING CHARACTERISTICS (Notes 8 & 9) Turn−On Delay Time Rise Time (VDD = −10 Vdc, ID = −2.4 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time (VDD = −10 Vdc, ID = −1.2 Adc, VGS = −2.7 Vdc, RG = 6.0 W) Turn−Off Delay Time tf − 29 55 td(on) − 15 − tr − 40 − td(off) − 35 − tf − 35 − Qtot − 10 18 Fall Time Total Gate Charge (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −2.4 Adc) Gate−Source Charge ns nC Qgs − 1.5 − Qgd − 5.0 − VSD − − −0.88 −0.75 −1.0 − Vdc trr − 37 − ns ta − 16 − tb − 21 − QRR − 0.025 − Gate−Drain Charge BODY−DRAIN DIODE RATINGS (Note 8) Diode Forward On−Voltage (IS = −2.4 Adc, VGS = 0 Vdc) (IS = −2.4 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = −2.4 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge mC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 8) VF Maximum Instantaneous Forward Voltage IF = 1.0 Adc IF = 2.0 Adc IR Maximum Instantaneous Reverse Current VR = 20 Vdc Maximum Voltage Rate of Change VR = 20 Vdc dV/dt 7. Handling precautions to protect against electrostatic discharge is mandatory. 8. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 9. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 TJ = 25°C TJ = 125°C 0.47 0.58 0.39 0.53 TJ = 25°C TJ = 125°C 0.05 10 10,000 V mA V/ms NTMSD2P102LR2 4 5 VGS = −10 V VGS = −4.5 V VGS = −2.5 V 3 TJ = 25°C −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) VGS = −2.1 V VGS = −1.9 V 2 VGS = −1.7 V 1 VGS = −1.5 V 3 2 TJ = 25°C 1 TJ = 100°C 0 2 4 6 8 1 10 3 2.5 Figure 2. Transfer Characteristics. RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics. 0.15 0.1 0.05 0 2 4 6 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.12 TJ = 25°C 0.1 VGS = −2.7 V 0.08 VGS = −4.5 V 0.06 0.04 1 1.5 2 2.5 3 3.5 4 4.5 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage. Figure 4. On−Resistance vs. Drain Current and Gate Voltage. 1.6 1000 VGS = 0 V ID = −2.4 A VGS = −4.5 V TJ = 125°C −IDSS, LEAKAGE (nA) 100 1.2 1 0.8 0.6 −50 2 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C 1.4 1.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 55°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS > = −10 V 4 TJ = 100°C 10 TJ = 25°C 1 0.1 0.01 −25 0 25 75 50 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 0 Figure 5. On−Resistance Variation with Temperature. 4 8 12 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−to−Source Leakage Current vs. Voltage. http://onsemi.com 4 20 C, CAPACITANCE (pF) VDS = 0 V 1200 VGS = 0 V Ciss TJ = 25°C 900 Crss Ciss 600 300 Coss Crss 0 10 5 0 −VGS −VDS 5 10 15 20 5 20 18 QT 16 4 14 3 12 VGS Q1 10 Q2 8 2 6 1 ID = −2.4 A TJ = 25°C VDS 4 2 0 0 0 2 4 6 8 12 10 14 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1500 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTMSD2P102LR2 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 100 td (off) tr t, TIME (ns) t, TIME (ns) VDD = −10 V ID = −1.2 A VGS = −2.7 V 100 tr td (on) 10 tf td (off) VDD = −10 V ID = −2.4 A VGS = −4.5 V td (on) 1.0 10 10 1.0 tf 100 1.0 100 RG, GATE RESISTANCE (OHMS) 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance −IS, SOURCE CURRENT (AMPS) 2 1.6 VGS = 0 V TJ = 25°C di/dt IS trr 1.2 ta tb TIME 0.8 0.25 IS tp IS 0.4 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 12. Diode Reverse Recovery Waveform −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current http://onsemi.com 5 NTMSD2P102LR2 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 Normalized to R∅ja at Steady State (1 inch pad) 0.1 0.0125 W 0.0563 W 0.110 W 0.273 W 0.113 W 0.436 W 2.93 F 152 F 261 F 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F Single Pulse 0.01 1E−03 1E−02 1E−01 1E+00 1E+03 1E+02 1E+03 t, TIME (s) Figure 13. FET Thermal Response TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C 1.0 85°C 25°C −40° C 0.1 TJ = 125°C 85°C 1.0 25°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage http://onsemi.com 6 1.4 NTMSD2P102LR2 IR , REVERSE CURRENT (AMPS) 1E−2 TJ = 125°C 1E−3 85°C 1E−4 1E−5 25°C 1E−6 1E−7 0 5.0 15 10 20 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1E−1 TJ = 125°C 1E−2 1E−3 1E−4 25°C 1E−5 1E−6 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 17. Maximum Reverse Current 1000 100 10 15 10 20 1.6 dc FREQ = 20 kHz 1.4 1.2 SQUARE WAVE 1.0 Ipk/Io = p 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 0.6 dc SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 0.4 Ipk/Io = 10 Ipk/Io = 20 0.3 0.2 0.1 0 0 0.5 100 120 Figure 19. Current Derating 0.7 0.5 80 TA, AMBIENT TEMPERATURE (°C) Figure 18. Typical Capacitance PFO, AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) TYPICAL CAPACITANCE AT 0 V = 170 pF 5.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Typical Reverse Current 0 15 10 1.0 1.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 20. Forward Power Dissipation http://onsemi.com 7 2.0 140 160 NTMSD2P102LR2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.0031 W CHIP JUNCTION 0.0014 F 0.01 0.01 0.0154 W 0.1521 W 0.4575 W 0.3719 W 0.0082 F 0.1052 F SINGLE PULSE 2.7041 F 158.64 F AMBIENT 0.001 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 Figure 21. Schottky Thermal Response http://onsemi.com 8 1.0E+01 1.0E+02 1.0E+03 NTMSD2P102LR2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B 1 M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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