NTR4503NT1G

NTR4503N, NVTR4503N MOSFET – Power, Single, N-Channel, SOT-23 30 V, 2.5 A Features • • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP 85 mW @ 10 V 30 V N−Channel D • DC−DC Conversion • Load/Power Switch for Portables • Load/Power Switch for Computing G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.0 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C 1.5 t ≤ 10 s TA = 25°C 2.5 Power Dissipation (Note 1) Steady State TA = 25°C PD 0.73 W Continuous Drain Current (Note 2) Steady State TA = 25°C ID 1.5 A Power Dissipation (Note 2) Pulsed Drain Current TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Peak Source Current (Diode Forward) tp = 10 ms Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2.5 A 105 mW @ 4.5 V Applications Parameter ID MAX 1.1 PD 0.42 W IDM 10 A TJ, Tstg −55 to 150 °C IS 2.0 A ISM 4.0 A TL 260 °C S 3 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 2 SOT−23 CASE 318 STYLE 21 TR3 M G TR3 MG G 1 Gate 2 Source = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† NTR4503NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NVTR4503NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 June, 2019 − Rev. 8 1 Publication Order Number: NTR4503N/D NTR4503N, NVTR4503N THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) Parameter RqJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size. 2. Surface−mounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2 NTR4503N, NVTR4503N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 30 36 IDSS VGS = 0 V, VDS = 24 V 1.0 VGS = 0 V, VDS = 24 V, TJ = 125°C 10 IGSS VDS = 0 V, VGS = "20 V "100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.75 3.0 V Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 2.5 A 85 110 mW VGS = 4.5 V, ID = 2.0 A 105 140 VDS = 4.5 V, ID = 2.5 A 5.3 S 135 pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V mA ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.0 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 0 V, f = 1.0 MHz, VDS = 24 V 52 15 130 250 42 75 13 25 7.0 Total Gate Charge QG(TOT) 3.6 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.7 Total Gate Charge QG(TOT) 1.9 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 15 V, ID = 2.5 A VGS = 4.5 V, VDS = 24 V, ID = 2.5 A pF nC 0.6 nC 0.3 0.6 0.9 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 5.8 12 5.8 10 14 25 tf 1.6 5.0 td(on) 4.8 tr td(off) tr td(off) VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 W VGS = 10 V, VDD = 24 V, ID = 2.5 A, RG = 2.5 W tf ns ns 6.7 13.6 1.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 2.0 A 0.85 VGS = 0 V, IS = 2.0 A, dIS/dt = 100 A/ms 9.2 1.2 ns V 4.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTR4503N, NVTR4503N TYPICAL PERFORMANCE CURVES 8 4V 3.6 V 6 3.4 V 3.2 V 4 3V 2 2.8 V 2.6 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS ≥ 10 V 3.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 10 V 6V 5V 4.5 V 4.2 V 2 1 3 8 4 4 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2 ID = 2.5 A TJ = 25°C 0.25 0.2 0.15 0.1 0.05 0 4 6 3 5 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2 10 TJ = 25°C 0.11 VGS = 4.5 V 0.10 0.09 0.08 VGS = 10 V 0.07 2 3 6 5 4 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.8 VGS = 0 V IDSS, LEAKAGE (nA) ID = 2.5 A VGS = 10 V 1.4 1.2 1.0 TJ = 150°C 100 10 TJ = 100°C 0.8 0.6 −50 6 0.12 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.3 1.6 100°C 25°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 10 −25 0 25 50 75 100 125 150 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTR4503N, NVTR4503N VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss VDS QG 10 200 Crss 100 Coss 0 10 15 15 5 VGS 0 VDS 5 10 15 20 30 25 VGS 5 QGS 0 0 0 1 2 3 QG, TOTAL GATE CHARGE (nC) IS, SOURCE CURRENT (AMPS) t, TIME (ns) 3 td(off) tf 10 1 td(on) tr 1 10 VGS = 0 V TJ = 25°C 2 1 0 0.3 100 4 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation VDD = 24 V ID = 2.5 A VGS = 10 V 5 QGD ID = 2.5 A TJ = 25°C GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 10 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 300 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 1 NTR4503N, NVTR4503N PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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