NTTFS008P03P8Z

DATA SHEET www.onsemi.com MOSFET - Power, Single P-Channel, WDFN8 RDS(on) V(BR)DSS −30 V -30 V, 3.8 mW, -96 A ID 3.8 mW @ −10 V −96 A 6.5 mW @ −4.5 V NTTFS008P03P8Z S (1, 2, 3) Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3x3.3mm for Space Saving and G (4) P−Channel MOSFET Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS D (5, 6, 7, 8) Compliant MARKING DIAGRAM Typical Applications • Power Load Switch • Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage 8P03 AYWW WDFN8 CASE 483AW • Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS "25 V ID −96 A Parameter Continuous Drain Current RqJC (Notes 1, 2) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State TC = 85°C 8P03 A Y WW = Specific Device Code = Assembly Location = Year = Work Week −69 TC = 25°C PD TA = 25°C ID ORDERING INFORMATION 50 W −22 A NTTFS008P03P8ZTWG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Device Steady State TA = 85°C −16 TA = 25°C PD 2.36 W TA = 25°C, tp = 10 ms IDM −418 A TJ, Tstg −55 to 150 °C TL 260 °C Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Package Shipping† WDFN8 3000 / Tape & (Pb−Free) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 2) RqJC 2.5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 47 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. Assuming a 76mm x 76mm x 1.6mm board. © Semiconductor Components Industries, LLC, 2017 August, 2021 − Rev. 4 1 Publication Order Number: NTTFS008P03P8Z/D NTTFS008P03P8Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −30 V(BR)DSS/ TJ ID = −250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient VGS = 0 V, VDS = −24 V V −8 TJ = 25°C mV/° C Zero Gate Voltage Drain Current IDSS −1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "25 V "10 mA VGS(TH) VGS = VDS, ID = −250 mA −3.0 V VGS(TH)/TJ ID = −250 mA, ref to 25°C 5.9 RDS(on) VGS = −10 V, ID = −18 A 2.5 3.8 VGS = −4.5 V, ID = −14 A 4.3 6.5 gFS VDS = −5 V, ID = −14 A 74 S Input Capacitance Ciss 5600 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = −15 V Reverse Transfer Capacitance Crss 1890 Total Gate Charge QG(TOT) 134 Threshold Gate Charge QG(TH) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Froward Transconductance −1.0 mV/°C mW CHARGES AND CAPACITANCES Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = −10 V, VDS = −15 V, ID = −14 A 1940 nC 3 15 51 VGS = −4.5 V, VDS = −15 V, ID = −14 A 82 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 49 VGS = −4.5 V, VDS = −15 V, ID = −14 A, RG = 6 W tf 248 95 187 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 19 tr 53 td(off) VGS = −10 V, VDS = −15 V, ID = −14 A, RG = 6 W tf ns 201 177 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −14 A TJ = 25°C −0.77 TJ = 125°C −0.63 52 VGS = 0 V, dls/dt = 100 A/ms, Is = −14 A QRR −1.3 V ns 21 30 31 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 NTTFS008P03P8Z 4.0 V 3.5 V VGS = 10 V to 4.5 V 0 0.5 1.0 1.5 −ID, DRAIN CURRENT (A) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 2.0 2.5 3.0 TJ = 25°C TJ = 125°C 0 1.5 1.5 2.0 TJ = −55°C 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics TJ = 25°C ID = −18 A 16 14 12 10 8 6 4 4 5 6 7 9 8 10 VGS, GATE VOLTAGE (V) 4.5 5.0 6 TJ = 25°C VGS = −4.5 V 5 4 3 VGS = −10 V 2 1 0 10 30 50 70 90 130 110 150 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.E+05 VGS = 10 V ID = −18 A TJ = 150°C 1.E+04 1.5 TJ = 125°C −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics 18 3 VDS = −10 V −VGS, GATE−TO−SOURCE VOLTAGE (V) 20 2 0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.E+03 1.0 TJ = 85°C 1.E+02 1.E+01 0.5 TJ = 25°C 1.E+00 0 −50 −25 0 25 50 75 100 125 1.E−01 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTTFS008P03P8Z TYPICAL CHARACTERISTICS CISS COSS C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CRSS 1K 100 VGS = 0 V TJ = 25°C f = 1 MHz 0.01 1 0.1 10 100 7 6 5 4 QGS QGD 3 2 1 0 0 40 20 60 80 100 120 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge −IS, SOURCE CURRENT (A) 16 tf tr 10 td(on) VGS = −10 V VDS = −15 V ID = −14 A 1 10 VGS = 0 V 14 12 10 8 6 4 TJ = 125°C TJ = 25°C 2 0 100 140 TJ = −55°C 0 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 8 QG, TOTAL GATE CHARGE (nC) td(off) 1 VDS = −15 V ID = −14 A TJ = 25°C 9 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 100 10 100 10 1 TA = 25°C Single Pulse VGS ≤ 10 V RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 500 ms 1 ms 10 ms 100 ms 1s 0.1 1 DC 10 VDS, DRAIN−TO−SOURCE VOLTAGE(V) Figure 11. Safe Operating Area www.onsemi.com 4 100 NTTFS008P03P8Z TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 12. Thermal Characteristics www.onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A GENERIC MARKING DIAGRAM* XXXX A Y WW XXXX AYWW DOCUMENT NUMBER: DESCRIPTION: = Specific Device Code = Assembly Location = Year = Work Week 98AON13672G WDFN8 3.3X3.3, 0.65P DATE 10 SEP 2019 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative