NTTFS015P03P8ZTAG

NTTFS015P03P8Z MOSFET – Power, Single, P-Channel, m8FL -30 V, 7.5 mW Features www.onsemi.com • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RDS(on) V(BR)DSS ID 7.5 mW @ −10 V −30 V −47.6 A 12 mW @ −4.5 V Typical Applications • Power Load Switch • Protection: Reverse Current, Over Voltage, and Reverse Negative S (1, 2, 3) Voltage • Battery Management G (4) P−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 2) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State Steady State Symbol Value Unit VDSS −30 V VGS "25 V ID −47.6 A TC = 85°C −34.4 TC = 25°C PD 33.8 W TA = 25°C ID −13.4 A TA = 85°C −9.6 TA = 25°C PD 2.66 W TA = 25°C, tp = 10 ms IDM −195 A TJ, Tstg −55 to 150 °C TL 260 °C Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 2) RqJC 3.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 47 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. Assuming a 76mm x 76mm x 1.6mm board. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 0 1 D (5, 6, 7, 8) MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 15P3 A Y WW G 15P3 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS015P03P8ZTAG WDFN8 1500 / Tape & (Pb−Free) Reel NTTFS015P03P8ZTWG WDFN8 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS015P03P8Z/D NTTFS015P03P8Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −30 V(BR)DSS/ TJ ID = −250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient VGS = 0 V, VDS = −24 V V −4.4 TJ = 25°C mV/° C Zero Gate Voltage Drain Current IDSS −1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "25 V "10 mA VGS(TH) VGS = VDS, ID = −250 mA −3.0 V VGS(TH)/TJ ID = −250 mA, ref to 25°C 5.6 RDS(on) VGS = −10 V, ID = −12 A 5.0 7.5 12 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance −1.0 mV/°C mW VGS = −4.5 V, ID = −10 A 8.0 gFS VDS = −5 V, ID = −10 A 77 S Input Capacitance Ciss 2706 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = −15 V Reverse Transfer Capacitance Crss Froward Transconductance CHARGES AND CAPACITANCES 907 875 Total Gate Charge QG(TOT) 37 Threshold Gate Charge QG(TH) 5.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −15 V, ID = −10 A nC 8.2 21.7 VGS = −10 V, VDS = −15 V, ID = −10 A 62.3 105 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 25 VGS = −4.5 V, VDS = −15 V, ID = −10 A, RG = 6 W tf 138 55 98 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 17 VGS = −10 V, VDS = −15 V, ID = −10 A, RG = 6 W tf 34 99 97 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C −0.8 TJ = 125°C −0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −10 A 40.7 VGS = 0 V, dls/dt = 100 A/ms, Is = −10 A QRR −1.3 V ns 18.4 22.3 29 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 NTTFS015P03P8Z TYPICAL CHARACTERISTICS VGS = −10 V −ID, DRAIN CURRENT (A) 80 90 −4.2 V 70 80 −4.0 V −3.8 V 60 50 −3.6 V 40 −3.4 V 30 20 −3.2 V 10 −3.0 V 0 0.5 1.5 1.0 2.0 2.5 60 50 40 30 20 0 3.0 TJ = 25°C 0 5 4 5 6 7 8 9 10 −VGS, GATE−TO−SOURCE VOLTAGE (V) 2.0 2.5 3.0 3.5 4.0 4.5 10 VGS = −4.5 V 8 6 VGS = −10 V 4 2 0 TJ = 25°C 5 10 15 20 25 30 35 40 −ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100,000 1.5 ID = −10 A VGS = −10 V 1.2 1.1 1.0 0.9 0.8 0.7 −25 0 TJ = 150°C 10,000 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 12 Figure 3. On−Resistance vs. Gate−to−Source Voltage 0.6 0.5 −50 1.0 Figure 2. Transfer Characteristics 10 1.3 0.5 Figure 1. On−Region Characteristics 15 1.4 TJ = −55°C TJ = 125°C −VGS, GATE−TO−SOURCE VOLTAGE (V) ID = −10 A TJ = 25°C 3 70 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 VDS = −10 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −4.5 V −ID, DRAIN CURRENT (A) 90 25 50 75 100 125 150 TJ = 125°C 1000 TJ = 85°C 100 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTTFS015P03P8Z 10,000 VGS = 0 V TJ = 25°C f = 1 MHz Ciss C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Coss Crss 1000 0 1000 5 10 15 20 25 30 t, TIME (ns) ID, DRAIN CURRENT (A) 6 5 3 2 1 0 0 100 VDS = −15 V ID = −10 A VGS = −10 V tf td(off) 0.1 10 20 30 40 50 60 1 10 10 1 TJ = 125°C 0.1 100 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current VGS ≤ 10 V Single Pulse TC = 25°C 500 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 70 VGS = 0 V 10 1 Qgd Qgs 4 Figure 8. Gate−to−Source vs. Total Charge td(on) 100 7 Figure 7. Capacitance Variation 100 1000 8 Qg, TOTAL GATE CHARGE (nC) tr 10 TJ = 25°C VDS = −15 V ID = −10 A 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) −IS, SOURCE CURRENT (A) 100 10 1.0 NTTFS015P03P8Z TYPICAL CHARACTERISTICS RqJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) 100 Duty Cycle = 50% 20% 10 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, PULSE TIME (s) Figure 12. Thermal Response www.onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative