NTLJS3D0N02P8ZTAG

MOSFET - Power, Single N-Channel, WDFN6 20 V NTLJS3D0N02P8Z Features www.onsemi.com • Small Footprint (4 mm2) for Compact Design • Ultra−Low RDS(on) to Minimize Conduction Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant V(BR)DSS RDS(on) MAX 3.8 mW @ 4.5 V Applications • • • • • ID MAX 20 V Wireless Charging Power Load Switch Power Management and Protection Battery Management DC−DC Converters 5.5 mW @ 2.5 V 20.2 A 14.2 mW @ 1.8 V ELECTRICAL CONNECTION D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 20.2 A Continuous Drain Current RqJA (Notes 1, 3) Steady State Power Dissipation RqJA (Notes 1, 3) Continuous Drain Current RqJA (Notes 2, 3) Steady State Power Dissipation RqJA (Notes 2, 3) Pulsed Drain Current TA = 25°C TA = 85°C G S N−CHANNEL MOSFET 14.6 TA = 25°C PD 2.40 W TA = 25°C ID 12.1 A MARKING DIAGRAM W YWZZ D3D0 TA = 85°C TA = 25°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 8.7 PD 0.86 IDM 81 A TJ, Tstg −55 to +150 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. WDFN6 (2.05x2.05) CASE 483AV YW = Date Code ZZ = Assembly Lot Code D3D0 = Specific Device Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 4 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Ambient − Steady State (Note 1) RqJA 52 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 145 in2 1. Surface−mounted on FR4 board using 1 pad size, 2 oz. Cu pad. 2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RqCA is determined by the user’s board design. © Semiconductor Components Industries, LLC, 2019 January, 2020 − Rev. 2 1 Publication Order Number: NTLJS3D0N02P8Z/D NTLJS3D0N02P8Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Parameter Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Gate−to−Source Leakage Current VGS = 0 V, VDS = 16 V V 16.1 mV/°C TJ = 25°C 1 TJ = 125°C 10 mA IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA VGS/TJ ID = 250 mA, ref to 25°C −3.97 RDS(on) VGS = 4.5 V, ID = 10 A 3.1 3.8 VGS = 2.5 V, ID = 10 A 4.5 5.5 VGS = 1.8 V, ID = 5 A 10 14.2 VDS = 5 V, ID = 10 A 80 S 2165 pF ±10 mA 1.2 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance gFS 0.6 mV/°C mW CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, VDS = 10 V, f = 1.0 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 396 Total Gate Charge QG(TOT) 21 nC Threshold Gate Charge QG(TH) 1.6 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 10 V, ID = 10 A 417 3.2 7.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 14 VGS = 4.5 V, VDD = 15 V, ID = 10 A, RG = 6 W tf 22 54 46 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 10 A TJ = 25°C 0.74 TJ = 125°C 0.6 VGS = 0 V, dlS/dt = 100 A/ms, IS = 10 A 1.2 V 23 ns 6.9 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLJS3D0N02P8Z TYPICAL CHARACTERISTICS 20 18 ID, DRAIN CURRENT (A) 16 14 12 1.6 V 10 8 6 4 2 0 1.4 V . 0 2 1 3 4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 14 12 10 8 TJ = 25°C 6 4 0 5 TJ = 125°C 0 5 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 7 8 9 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 5 6 8 7 9 10 12 11 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K VGS = 4.5 V ID = 10 A TJ = 150°C 10K IDSS, LEAKAGE (nA) 1.6 1.4 1.2 1.0 0.8 0.6 1K TJ = 125°C 100 TJ = 85°C 10 1 TJ = 25°C 0.1 0.01 −25 0 25 50 75 100 125 10 TJ = 25°C Figure 3. On−Resistance vs. Gate−to−Source Voltage (V) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 6 Figure 2. Transfer Characteristics 10 0.4 −50 5 4 Figure 1. On−Region Characteristics 15 1.8 3 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 10 A 2.0 2 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 16 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 20 VGS = 4.5 V to 1.8 V 18 150 0.001 5 7 9 11 13 15 17 19 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTLJS3D0N02P8Z TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K 1K COSS CRSS 100 10 f = 1 MHz VGS = 0 V TJ = 25°C 0 t, TIME (ns) 1K 2 4 6 8 10 12 14 16 18 20 8 7 6 5 4 3 QGS QGD 2 1 0 5 0 10 15 20 25 30 40 35 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge VGS = 4.5 V VDS = 15 V ID = 10 A tf tr td(on) 10 10 1 45 VGS = 0 V td(off) 100 1 VDS = 10 V ID = 10 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) CISS 10 100 10 1 0.3 TJ = 125°C 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current DEVICE ORDERING INFORMATION Device NTLJS3D0N02P8ZTAG Marking Package Shipping† D3D0 WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2.05X2.05, 0.65P CASE 483AV ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13671G WDFN6 2.05X2.05, 0.65P DATE 02 APR 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative