NTLJS17D0P03P8ZTAG

MOSFET - Power, Single P-Channel, WDFN6 -30 V Product Preview NTLJS17D0P03P8Z www.onsemi.com Features • Small Footprint (4 for Compact Design • Low RDS(on) to Minimize Conduction Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS mm2) RDS(on) MAX V(BR)DSS Compliant −30 V Applications • Battery Management • Protection • Power Load Switch ID MAX 11.3 mW @ −10 V −11.7 A 21.3 mW @ −4.5 V ELECTRICAL CONNECTION S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS ±25 V ID −11.7 A Continuous Drain Current RqJA (Notes 1, 3) Steady State Power Dissipation RqJA (Notes 1, 3) Continuous Drain Current RqJA (Notes 2, 3) Steady State Power Dissipation RqJA (Notes 2, 3) Pulsed Drain Current TA = 25°C TA = 85°C −8.4 G D P−CHANNEL MOSFET TA = 25°C PD 2.40 W TA = 25°C ID −7.0 A MARKING DIAGRAM W YWZZ A17D TA = 85°C TA = 25°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) −5.1 PD 0.86 IDM 47 A TJ, Tstg −55 to +150 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YW ZZ A 17D = Date Code = Assembly Lot Code = Assembly Site Code = Specific Device Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 4 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter WDFN6 (2.05x2.05) CASE 483AV Symbol Value Unit Junction−to−Ambient − Steady State (Note 1) RqJA 52 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 145 1. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz. Cu pad. 2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RqCA is determined by the user’s board design. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2018 May, 2020 − Rev. P4 1 Publication Order Number: NTLJS17D0P03P8Z/D NTLJS17D0P03P8Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Parameter Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Gate−to−Source Leakage Current VGS = 0 V, VDS = −24 V V 12.7 mV/°C TJ = 25°C −1 TJ = 125°C −10 IGSS VDS = 0 V, VGS = ±25 V VGS(TH) VGS = VDS, ID = −250 mA VGS/TJ ID = −250 mA, ref to 25°C mA ±10 mA −3.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS −1.0 −5.9 mV/°C VGS = −10 V, ID = −10 A 8.6 11.3 VGS = −4.5 V, ID = −10 A 14.3 21.3 mW VDS = −5 V, ID = −10 A 34 S 1600 pF CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VGS = 0 V, VDS = −15 V, f = 1.0 MHz 550 Crss 530 Total Gate Charge QG(TOT) 23 nC Threshold Gate Charge QG(TH) 3.0 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −15 V, ID = −10 A 4.6 14.2 VGS = −10 V, VDS = −15 V, ID = −10 A 38 nC 18 ns SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = −4.5 V, VDD = −15 V, ID = −10 A, RG = 6 W tf 106 40 72 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 9 VGS = −10 V, VDD = −15 V, ID = −10 A, RG = 6 W tf 18 85 70 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = −10 A TJ = 25°C 0.83 TJ = 125°C 0.7 VGS = 0 V, dlS/dt = −100 A/ms, IS = −10 A 1.3 V 32 ns 10 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLJS17D0P03P8Z TYPICAL CHARACTERISTICS 16 14 −ID, DRAIN CURRENT (A) −3.0 V 12 −3.5 V 10 8 −2.8 V 6 4 2 0 −2.6 V . −2.4 V 0 2 1 3 4 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 30 20 TJ = 25°C 10 TJ = 125°C 1 0 TJ = −55°C 3 2 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = −10 A 35 30 25 20 15 10 3 40 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 40 5 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) 60 VGS = −10 V to −4.5 V 5 4 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 20 TJ = 25°C 18 16 VGS = −4.5 V 14 12 10 VGS = −10 V 8 6 4 5 7 6 8 9 10 11 12 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage (V) Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = −10 V ID = −10 A 1.3 1.1 0.9 0.7 0.5 −50 TJ = 150°C 10K −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 100K 1.5 1K TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0.1 0.01 −25 0 25 50 75 100 125 150 0.001 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTLJS17D0P03P8Z TYPICAL CHARACTERISTICS 1K COSS CRSS 100 f = 1 MHz VGS = 0 V TJ = 25°C 10 0 1K t, TIME (ns) −VGS, GATE−TO−SOURCE VOLTAGE (V) CISS 10 5 15 20 30 25 VDS = −15 V ID = −10 A TJ = 25°C 9 8 7 6 5 4 QGS QGD 3 2 1 0 5 0 10 15 20 25 30 35 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge VGS = −10 V VDS = −15 V ID = −10 A tr td(on) 10 10 TJ = 125°C 1 10 1 40 VGS = 0 V tf td(off) 100 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 10K 100 0.3 0.4 0.5 TJ = 25°C 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current DEVICE ORDERING INFORMATION Device NTLJS17D0P03P8ZTAG Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2.05X2.05, 0.65P CASE 483AV ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13671G WDFN6 2.05X2.05, 0.65P DATE 02 APR 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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