NTTFS5820NLTWG

NTTFS5820NL Power MOSFET 60 V, 37 A, 11.5 mW Features • • • • Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 60 V RDS(on) MAX 11.5 mW @ 10 V 15 mW @ 4.5 V N−Channel MOSFET D (5−8) ID MAX 37 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C tp = 10 ms IDM TJ, Tstg IS L = 0.1 mH EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 60 ±20 11 7 2.7 1.1 37 24 33 13 149 −55 to +150 37 48 31 260 A °C A mJ A °C W 1 Unit V V A G (4) S (1,2,3) W A 1 S S S G MARKING DIAGRAM WDFN8 (m8FL) CASE 511AB 5820 A Y WW G 5820 AYWWG G D D D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package Lead Temperature for Soldering Purposes (1/8” from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device NTTFS5820NLTAG Package Shipping† WDFN8 1500 / Tape & Reel (Pb−Free) THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 1) Symbol RqJC RqJA Value 3.8 46.7 Unit °C/W NTTFS5820NLTWG WDFN8 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 0 1 Publication Order Number: NTTFS5820NL/D NTTFS5820NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A TJ = 25°C TJ = 125°C VGS = 4.5 V, VDS = 48 V, ID = 10 A, RG = 2.5 W VGS = 4.5 V, VDS = 48 V, ID = 10 A VGS = 10 V, VDS = 48 V, ID = 10 A VGS = 4.5 V, VDS = 48 V, ID = 10 A Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 10 28 19 22 ns VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V VGS = 4.5 V Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1462 150 96 28 15 1 4 8 3 0.62 V W nC nC pF ID = 8.7 A ID = 7.3 A VGS = 0 V, VDS = 60 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 60 57 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 6.2 10.1 13.0 24.6 2.3 V mV/°C 11.5 15 mW VDS = 5 V, ID = 10 A S DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.79 0.65 19 13 6 15 nC ns 1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS5820NL TYPICAL CHARACTERISTICS 80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 3.4 V 3.2 V 3.0 V 2.8 V 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 V 80 4.0 V 3.8 V 3.6 V TJ = 25°C ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 1 TJ = 25°C TJ = 125°C 2 3 TJ = −55°C 4 5 VDS ≥ 10 V VGS = 5 V VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.030 0.025 0.020 0.015 0.010 0.005 ID = 10 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.016 Figure 2. Transfer Characteristics TJ = 25°C 0.014 VGS = 4.5 V 0.012 VGS = 10 V 0.010 2 4 6 8 10 12 0.008 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 −50 −25 0 25 50 75 100 125 150 100 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 100,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1,000 TJ = 125°C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTTFS5820NL TYPICAL CHARACTERISTICS 1800 1600 C, CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0 Coss Crss 10 20 30 40 50 60 DRAIN−TO−SOURCE VOLTAGE (V) Ciss VGS = 0 V TJ = 25°C 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 6 4 Qgs 2 0 QT Qgd VDS = 48 V ID = 10 A TJ = 25°C 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 40 IS, SOURCE CURRENT (A) 1000 VDD = 48 V ID = 10 A VGS = 4.5 V 100 t, TIME (ns) tf td(on) td(off) 30 VGS = 0 V TJ = 25°C tr 10 20 10 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 VGS = 10 V Single Pulse TC = 25°C 100 ms 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAISN VOLTAGE (V) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 50 40 30 20 10 0 Figure 10. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (A) 100 10 ms 10 dc 0.1 100 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) 150 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTTFS5820NL TYPICAL CHARACTERISTICS RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Duty Cycle = 0.5 10 0.2 0.1 1 0.05 0.02 0.01 0.1 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.000001 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 NTTFS5820NL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C D D1 8765 A B 0.20 C E1 E 4X q 1234 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 8X b CAB c A1 6X C SEATING PLANE e DETAIL A DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 −−− −−− 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 −−− 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 12 _ SOLDERING FOOTPRINT* e/2 1 4 0.10 0.05 c L 0.42 K PACKAGE OUTLINE 8X 0.65 PITCH 0.66 4X E2 8 5 M D2 BOTTOM VIEW L1 0.75 0.57 2.30 3.60 G 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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