NUD3124_05

NUD3124 Automotive Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features http://onsemi.com MARKING DIAGRAMS 3 1 2 SOT−23 CASE 318 STYLE 21 JW6 MG G • Provides Robust Interface between D.C. Relay Coils and Sensitive • • • • • Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs Pb−Free Packages are Available JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays Benefits 6 1 SC−74 CASE 318F STYLE 7 JW6 MG G • • • • Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3124LT1 NUD3124LT1G NUD3124DMT1 Package SOT−23 SOT−23 (Pb−Free) SC−74 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel SC−74 NUD3124DMT1G (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Drain (6) Drain (3) Gate (1) 10 k 100 K Gate (2) 10 k 100 K 10 k 100 K Gate (5) Source (2) CASE 318 Source (1) Source (4) CASE 318F © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 10 Publication Order Number: NUD3124/D NUD3124 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol VDSS VGSS ID EZ Drain−to−Source Voltage – Continuous (TJ = 125°C) Gate−to−Source Voltage – Continuous (TJ = 125°C) Drain Current – Continuous (TJ = 125°C) Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) Human Body Model (HBM) According to EIA/JESD22/A114 Specification Rating Value 28 12 150 250 Unit V V mA mJ PPK ELD1 20 80 W V ELD2 100 V ELD3 300 V Rev−Bat Dual−Volt ESD −14 28 2,000 V V V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 2. 3. Nonrepetitive load dump suppressed pulse per Figure 3. 4. For relay’s coils/inductive loads higher than 80 W, see Figure 4. THERMAL CHARACTERISTICS Symbol TA TJ TSTG PD PD RqJA Operating Ambient Temperature Maximum Junction Temperature Storage Temperature Range Total Power Dissipation (Note 5) Derating above 25°C Total Power Dissipation (Note 5) Derating above 25°C Thermal Resistance Junction–to–Ambient (Note 5) SOT−23 SC−74 SOT−23 SC−74 Rating Value −40 to 125 150 −65 to 150 225 1.8 380 3.0 556 329 Unit °C °C °C mW mW/°C mW mW/°C °C/W 5. Mounted onto minimum pad board. http://onsemi.com 2 NUD3124 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) Forward Transconductance (VDS = 12 V, ID = 150 mA) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) ns tPHL tPLH tPHL tPLH − − − − 890 912 324 1280 − − − − ns tf tr tf tr − − − − 2086 708 556 725 − − − − Ciss Coss Crss − − − 32 21 8.0 − − − pf pf pf VGS(th) 1.3 1.3 RDS(on) − − − − IDS(on) 150 140 gFS − 200 − 500 − − − mmho − − − − 1.4 1.7 0.8 1.1 mA 1.8 − 2.0 2.0 W V VBRDSS IDSS − − − − IGSS − − − − − − − − 60 80 90 110 − − − − 0.5 1.0 50 80 mA 28 34 38 V mA Symbol Min Typ Max Unit http://onsemi.com 3 NUD3124 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VIH Vin 50% 0V tPHL 90% Vout 50% 10% VOL tr tPLH VOH tf Figure 1. Switching Waveforms 25 Ppk, PEAK SURGE POWER (W) 20 15 10 5 0 1 10 PW, PULSE WIDTH (ms) 100 Figure 2. Maximum Non−repetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: VR = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% TR = 1 − 10 ms ±10% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. VS = 30 V ±20% T = 150 ms ±20% TR 90% 10% of Peak; Reference = VR, IR 10% VR, IR VS T Figure 3. Load Dump Waveform Definition http://onsemi.com 4 NUD3124 140 IDSS, DRAIN LEAKAGE (mA) VS, LOAD DUMP (VOLTS) 14 12 10 VDS = 28 V 8 6 4 2 0 −50 −25 0 25 50 75 100 125 120 100 80 60 40 80 110 140 170 200 230 260 290 320 350 RELAY’S COIL (W) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Load Dump Capability versus Relay’s Coil dc Resistance Figure 5. Drain−to−Source Leakage versus Junction Temperature 80 BVDSS BREAKDOWN VOLTAGE (V) IGSS GATE LEAKAGE (mA) 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 34.8 34.6 34.4 34.2 34.0 33.8 33.6 33.4 −50 −25 0 25 50 75 100 125 ID = 10 mA −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate−to−Source Leakage versus Junction Temperature Figure 7. Breakdown Voltage versus Junction Temperature 1 0.01 VGS = 5 V ID DRAIN CURRENT (A) 1 VDS = 0.8 V 0.1 VGS = 3 V VGS = 2.5 V VGS = 2 V 125 °C ID DRAIN CURRENT (A) 0.01 0.001 1E−04 85 °C 25 °C −40 °C 1E−06 VGS = 1 V 1E−04 1E−05 1E−06 1E−08 1E−10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1E−07 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function http://onsemi.com 5 NUD3124 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 125 °C 85 °C 25 °C −40 °C RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1800 1600 1400 1200 1000 800 600 400 −50 ID = 0.15 A VGS = 5.0 V −25 0 25 50 75 100 125 ID = 0.25 A VGS = 3.0 V ID = 250 mA ID = 0.15 A VGS = 3.0 V TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 10. On Resistance Variation versus Junction Temperature Figure 11. On Resistance Variation versus Gate−to−Source Voltage 36.0 VZ ZENER CLAMP VOLTAGE (V) 35.5 35.0 34.5 34.0 33.5 33.0 32.5 32.0 0.1 1.0 10 100 1000 125 °C −40 °C 25 °C 85 °C IZ, ZENER CURRENT (mA) Figure 12. Zener Clamp Voltage versus Zener Current 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 SINGLE PULSE PW t1 t2 PERIOD DUTY CYCLE = t1/t2 0.001 0.01 0.1 1.0 10 100 t1, PULSE WIDTH (ms) 1000 10,000 100,000 1,000,000 Figure 13. Transient Thermal Response for NUD3124LT1 http://onsemi.com 6 NUD3124 APPLICATIONS INFORMATION 12 V Battery − + Relay, Vibrator, or Inductive Load Drain (3) NO NC Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3124 Source (2) Figure 14. Applications Diagram http://onsemi.com 7 NUD3124 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D 3 SEE VIEW C E 1 2 HE c b e q 0.25 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 NUD3124 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L C STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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