NUF6001MUT2G

NUF6001MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6001MU is a six−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100  and C = 17 pF deliver a cutoff frequency of 120 MHz and stop band attenuation greater than −30 dB from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 80 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and WLAN signals. The NUF6001MU is available in the low−profile 12−lead 1.2x2.5mm UDFN12 surface mount package. www.onsemi.com 601 M G • ±18 kV ESD Protection on each channel (IEC61000−4−2 Level 4, Contact Discharge) 1 = Specific Device Code = Month Code = Pb−Free Package (Note: Microdot may be in either location) • ±16 kV ESD Protection on each channel (HBM) • R/C Values of 100  and 17 pF deliver Exceptional S21 Performance • 601MG G 1 UDFN12 MU SUFFIX CASE 517AE Features/Benefits • MARKING DIAGRAM 12 Characteristics of 120 MHz f3dB and −30 dB Stop Band Attenuation from 800 MHz to 3.0 GHz Integrated EMI/ESD System Solution in UDFN Package Offers Exceptional Cost, System Reliability and Space Savings These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Device Package Shipping† NUF6001MUT2G UDFN12 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Applications • EMI Filtering for LCD and Camera Data Lines • EMI Filtering and Protection for I/O Ports and Keypads 0 R=100  Filter + ESDn Cd = 17 pF Cd = 17 pF Filter + ESDn S21 (dB) −10 −20 −30 −40 See Table 1 for pin description −50 −60 1.0E+6 10E+6 100E+6 1.0E+9 10E+9 FREQUENCY (Hz) Figure 1. Electrical Schematic © Semiconductor Components Industries, LLC, 2009 March, 2018 − Rev. 5 Figure 2. Typical Insertion Loss Curve 1 Publication Order Number: NUF6001MU/D NUF6001MU 1 2 3 4 5 6 GND PAD 12 11 10 9 8 7 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 12 Filter + ESD Channel 1 Filter 2 2 & 11 Filter + ESD Channel 2 Filter 3 3 & 10 Filter + ESD Channel 3 Filter 4 4&9 Filter + ESD Channel 4 Filter 5 5&8 Filter + ESD Channel 5 Filter 6 6&7 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter ESD IEC61000−4−2 (Contact Discharge) Human Body Model Machine Model Value Unit 18 16 1.6 kV DC Power per Resistor PR 100 mW DC Power per Package PT 600 mW Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Min Typ Max Unit VBR IR = 1.0 mA 6.0 7.0 5.0 V 8.0 V Leakage Current IR VRWM = 3.3 V 10 100 nA Resistance RA IR = 20 mA 100 115  Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 17 22 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 34 44 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 120 MHz 6 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 185 MHz Maximum Reverse Working Voltage Breakdown Voltage Symbol VRWM 85 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. 50  source and 50  load termination. www.onsemi.com 2 NUF6001MU TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 −10 −10 −20 S41 (dB) S21 (dB) −20 −30 −30 −40 −50 −40 −60 −50 −70 −80 −60 1.0E+6 10E+6 100E+6 1.0E+9 10E+9 10E+6 1.0E+9 10E+9 FREQUENCY (Hz) Figure 4. Typical Insertion Loss Curve Figure 5. Typical Analog Crosstalk 2 110 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE 100E+6 FREQUENCY (Hz) 1 0.5 104 102 100 98 96 94 92 0 0 1 2 3 4 90 −40 5 REVERSE VOLTAGE (V) −20 0 20 40 TEMPERATURE (°C) 60 80 Figure 7. Typical Resistance over Temperature Figure 6. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance, Cd @ 2.5 V) www.onsemi.com 3 NUF6001MU Theory of Operation approximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation. From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x. All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 8 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used. The NUF6001MU combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. Application Example The accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern 1−0−1−0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series Equation 1: a 1 sin((2n * 1) t) x(t) + 1 ) 2 0 2  n + 1 2n * 1  ƪ ƫ (eq. 1) Equation 2 (simplified form of Equation 1): ƪ ƫ sin( 0t) sin(3 0t) sin(5 0t) x(t) + 1 ) 2 ) ) ) AAA (eq. 2) 1 3 5 2  −3 dB −6 dB Magnitude (dB) −9 dB f1 f2 f3 100k 1M 100M 10M 1G 10G Frequency (Hz) Figure 8. Filter Bandwidth From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. www.onsemi.com 4 NUF6001MU with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 9b. In the case that a 100 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 9c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate. Table 2. Frequency Chart Bandwidth Maximum Supported Frequency Third Harmonic Frequency 3 dB – 100 MHz 33.33 MHz (f1) 100 MHz 6 dB – 200 MHz 66.67 MHz (f2) 200 MHz 9 dB – 300 MHz 100 MHz (f3) 300 MHz Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 9a. If a signal Input Waveform Output Waveform a) Frequency = f1 Input Waveform Output Waveform b) Frequency = f2 Input Waveform Output Waveform c) Frequency = f3 Figure 9. Input and Output Waveforms of Filter www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN12 2.5x1.2, 0.4P CASE 517AE ISSUE C 12 1 DATE 23 OCT 2012 SCALE 4:1 0.15 C PIN ONE REFERENCE 2X A3 A B D 2X ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÇÇ ÉÉ E A1 DETAIL B OPTIONAL CONSTRUCTION 0.15 C TOP VIEW (A3) DETAIL B A 0.10 C 12X SEATING PLANE 0.08 C SIDE VIEW C A1 L1 D2 DETAIL A 12X L 1 e (0.10) E2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.00 0.03 0.05 0.127 REF 0.15 0.20 0.25 2.50 BSC 1.70 1.80 1.90 1.20 BSC 0.20 0.30 0.40 0.40 BSC 0.20 TYP 0.20 0.25 0.30 −−− −−− 0.10 GENERIC MARKING DIAGRAM* 10X 6 L DIM A A1 A3 b D D2 E E2 e K L L1 XXXM G DETAIL A OPTIONAL CONSTRUCTION 12X K 12 7 12X b XXX M G 0.10 C A B BOTTOM VIEW 0.05 C 1 NOTE 3 = Specific Device Code = Month Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 1.50 0.35 0.40 1.90 11X 0.25 0.40 PITCH 12 X 0.45 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON22155D UDFN12 2.5X1.2, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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