NVE4153NT1G

NTA4153N, NTE4153N, NVA4153N, NVE4153N MOSFET – Single, N-Channel with ESD Protection, Small Signal, SC-75 and SC-89 http://onsemi.com 20 V, 915 mA V(BR)DSS RDS(on) TYP 0.127 W @ 4.5 V Features • • • • • ID MAX Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available 0.170 W @ 2.5 V 20 V 915 mA 0.242 W @ 1.8 V 0.500 W @ 1.5 V N−Channel MOSFET 3 Applications • • • • Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Value Units Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6.0 V ID 915 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C 660 PD 300 mW tp =10 ms IDM 1.3 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS 280 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Parameter Symbol Value Junction−to−Ambient − Steady State (Note 1) SC−75 / SOT−416 SC−89 RqJA Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT 1 SC−75 / SOT−416 CASE 463 2 STYLE 5 3 1 Steady State Pulsed Drain Current 2 3 Symbol Parameter 1 SC−89 CASE 463C 2 3 Drain XX MG G 1 Gate 2 Source XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SC−75, SC−89 Gate 1 THERMAL RESISTANCE RATINGS Units 416 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 7 3 °C/W 1 Source Drain 2 Top View ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Publication Order Number: NTA4153N/D NTA4153N, NTE4153N, NVA4153N, NVE4153N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 26 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 18.4 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±1.0 mA VGS(TH) VGS = VDS, ID = 250 mA 1.1 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.45 0.76 −2.15 mV/°C VGS = 4.5 V, ID = 600 mA 127 230 VGS = 2.5 V, ID = 500 mA 170 275 VGS = 1.8 V, ID = 350 mA 242 700 VGS = 1.5 V, ID = 40 mA 500 950 VDS = 10 V, ID = 400 mA 1.4 S 110 pF mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 16 V 16 12 Total Gate Charge QG(TOT) 1.82 Threshold Gate Charge QG(TH) 0.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.42 td(ON) 3.7 VGS = 4.5 V, VDS = 10 V, ID = 0.2 A nC 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 0.2 A, RG = 10 W tf ns 4.4 25 7.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.67 TJ = 125°C 0.54 1.1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTA4153N, NTE4153N, NVA4153N, NVE4153N TYPICAL ELECTRICAL CHARACTERISTICS 1.2 1.2 VDS w 10 V VGS = 2.6 V to 5.0 V 0.8 1.8 V 0.6 0.4 1.6 V 0.2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 1.0 1.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.8 0.6 0.4 0.2 TJ = −55°C 0 0.4 1.6 Figure 2. Transfer Characteristics 0.2 TJ = 125°C TJ = 25°C 0.1 TJ = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS = 2.5 V 0.3 TJ = 125°C 0.2 TJ = 25°C TJ = −55°C 0.1 0 0 0.1 0.2 200 C, CAPACITANCE (pF) ID = 0.35 A VGS = 4.5 V 1.2 1.0 0.8 25 50 75 100 0.4 0.5 0.6 0.7 Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 0 0.3 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature −25 2.0 0.4 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.2 Figure 1. On−Region Characteristics 0.3 0.6 −50 0.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 4.5 V 1.4 TJ = 25°C TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 0 0 1.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 2.0 V 125 150 TJ = 25°C VGS = 0 V 160 CISS 120 80 COSS 40 0 CRSS 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTA4153N, NTE4153N, NVA4153N, NVE4153N 5 0.6 QT IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD ID = 0.2 A TA = 25°C 1 0 0 0.4 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 0.5 0.4 0.3 0.1 0 2.0 TJ = 125°C 0.2 TJ = 25°C 0 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source Voltage vs. Total Gate Charge r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 0.2 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response ORDERING INFORMATION Marking Package Shipping† NTA4153NT1 TR SC−75 / SOT−416 3000 / Tape & Reel NTA4153NT1G TR SC−75 / SOT−416 (Pb−Free) 3000 / Tape & Reel NTE4153NT1G TP SC−89 (Pb−Free) 3000 / Tape & Reel NVA4153NT1G VR SC−75 / SOT−416 (Pb−Free) 3000 / Tape & Reel NVE4153NT1G VP SC−89 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−89, 3 LEAD CASE 463C−03 ISSUE C DATE 31 JUL 2003 SCALE 4:1 A −X− 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. B −Y− S K G 2 PL D 0.08 (0.003) M M C DIM A B C D G H J K L M N S 3 PL X Y J N −T− STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE SEATING PLANE MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE 3 xx D 1 H H 2 xx = Specific Device Code D = Date Code L *This information is generic. Please refer to device data sheet for actual part marking. G RECOMMENDED PATTERN OF SOLDER PADS DOCUMENT NUMBER: DESCRIPTION: 98AON11472D SC−89, 3 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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