NTA4153NT1

NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP 0.127 W @ 4.5 V 20 V 0.170 W @ 2.5 V 0.242 W @ 1.8 V 0.500 W @ 1.5 V 3 N−Channel MOSFET 915 mA ID MAX Applications Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady TA = 25°C State TA = 85°C Steady State tp =10 ms Symbol VDSS VGS ID Value 20 ±6.0 915 660 PD IDM TJ, TSTG IS TL 300 1.3 −55 to 150 280 260 mW A 3 Units V V mA 1 2 MARKING DIAGRAM & PIN ASSIGNMENT SC−75 / SOT−416 CASE 463 2 STYLE 5 3 Drain XX MG G 1 Gate 2 Source Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C 3 1 mA °C 2 1 SC−89 CASE 463C THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) SC−75 / SOT−416 SC−89 Symbol RqJA 416 400 Value Units °C/W XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SC−75, SC−89 Gate 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3 Drain Source 2 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 March, 2007 − Rev. 5 Publication Order Number: NTA4153N/D NTA4153N, NTE4153N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 16 V VDS = 0 V, VGS = ±4.5 V VGS = 0 V, ID = 250 mA 20 26 18.4 100 ±1.0 V mV/°C nA mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 350 mA VGS = 1.5 V, ID = 40 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 10 V, ID = 0.2 A, RG = 10 W 3.7 4.4 25 7.6 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 0.2 A VGS = 0 V, f = 1.0 MHz, VDS = 16 V 110 16 12 1.82 0.2 0.3 0.42 nC pF gFS VDS = 10 V, ID = 400 mA VGS = VDS, ID = 250 mA 0.45 0.76 −2.15 127 170 242 500 1.4 230 275 700 9500 S 1.1 V mV/°C mW DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C TJ = 125°C 0.67 0.54 1.1 V 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4153NT1 NTA4153NT1G NTE4153NT1G Marking (XX) TR TR TP Package SC−75 / SOT−416 SC−75 / SOT−416 (Pb−Free) SC−89 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4153N, NTE4153N TYPICAL ELECTRICAL CHARACTERISTICS 1.2 2.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.0 VGS = 2.6 V to 5.0 V 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.6 V 1.4 V 0 0 0.4 0.8 1.2 1.8 V 1.0 0.8 0.6 0.4 0.2 TJ = −55°C 1.6 2.0 1.2 VDS w 10 V TJ = 125°C TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.4 VGS = 4.5 V 0.3 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.4 Figure 2. Transfer Characteristics VGS = 2.5 V 0.3 TJ = 125°C 0.2 TJ = 25°C TJ = −55°C 0.1 0.2 TJ = 125°C TJ = 25°C 0.1 TJ = −55°C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = 0.35 A VGS = 4.5 V C, CAPACITANCE (pF) Figure 4. On−Resistance vs. Drain Current and Temperature 200 1.4 TJ = 25°C VGS = 0 V CISS 160 1.2 120 1.0 80 COSS CRSS 0 4 8 12 16 20 0.8 40 0.6 −50 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTA4153N, NTE4153N TYPICAL ELECTRICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QT 4 0.6 VGS = 0 V 0.5 0.4 0.3 0.2 0.1 TJ = 25°C 0 0 0.4 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.0 0 0.2 0.4 0.6 0.8 TJ = 125°C 3 QGS QGD 2 1 0 ID = 0.2 A TA = 25°C VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response http://onsemi.com 4 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 −D− b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 C A L A1 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C A −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 3 1 2 B −Y− S K G 2 PL DIM A B C D G H J K L M N S D 0.08 (0.003) M 3 PL XY M C N J −T− SEATING PLANE SOLDERING FOOTPRINT* 0.53 0.020 0.53 0.020 1.10 0.043 1.00 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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