DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, Split T-Type NPC
Inverter, Q2 Package
NXH200T120H3Q2F2STNG
The NXH200T120H3Q2F2STNG is a power module containing
a split T−type neutral point clamped three−level inverter.
The integrated field stop trench IGBTs and SiC Diodes provide lower
conduction losses and switching losses, enabling designers to achieve
high efficiency and superior reliability.
Features
•
•
•
•
•
•
•
•
Split T−type Neutral Point Clamped Three−level Inverter Module
1200 V Ultra Field Stop IGBTs & 650 V FS4 IGBTs
650 V SiC Diodes
Low Inductive Layout
Solderable Pins
Thermistor
Pre−applied Thermal Interface Material (TIM) (optional)
Nickel Plated DBC
PIM56, 93x47 (SOLDER PIN)
CASE 180AK
MARKING DIAGRAM
NXH200T120H3Q2F2Sxx
ATYYWW
NXH200T120H3Q2F2Sxxx = Device Code
YYWW
= Year and Work
Week Code
A
= Assembly Site Code
T
= Test Side Code
G
= Pb−Free Package
PIN CONNECTIONS
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Figure 1. NXH200T120H3Q2F2STNG Schematic Diagram
© Semiconductor Components Industries, LLC, 2021
March, 2023 − Rev. 4
1
Publication Order Number:
NXH200T120H3Q2F2STNG/D
NXH200T120H3Q2F2STNG
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
1200
V
Gate−Emitter Voltage
VGE
±20
V
IC
330
A
Rating
HALF BRIDGE IGBT
Continuous Collector Current @ TC = 25_C
Continuous Collector Current @ TC = 80_C ( TJ = 175_C)
256
Pulsed Collector Current (TJ = 175_C)
ICpulse
768
A
Ptot
679
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
Collector−Emitter Voltage
VCES
650
V
Gate−Emitter Voltage
VGE
±20
V
IC
128
A
ICpulse
384
A
Ptot
264
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
VRRM
1200
V
IF
94
A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax)
IFRM
282
A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
Ptot
232
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
VRRM
1200
V
IF
18
A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax)
IFRM
54
A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
Ptot
62
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
VRRM
650
V
IF
75
A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax)
IFRM
225
A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
Ptot
216
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
NEUTRAL POINT IGBT
Continuous Collector Current @ TC = 80_C (TJ = 175_C)
Pulsed Collector Current (TJ = 175_C)
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
HALF BRIDGE FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80_C (TJ = 175_C)
HALF BRIDGE INVERSE DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80_C (TJ = 175_C)
NEUTRAL POINT FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80_C (TJ = 175_C)
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NXH200T120H3Q2F2STNG
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted) (continued)
Rating
Symbol
Value
Unit
VRRM
650
V
IF
36
A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax)
IFRM
108
A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C)
Ptot
90
W
Minimum Operating Junction Temperature
TJMIN
−40
_C
Maximum Operating Junction Temperature
TJMAX
175
_C
Tstg
−40 to 125
_C
Vis
4000
VRMS
12.7
mm
NEUTRAL POINT INVERSE DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80_C (TJ = 175_C)
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation Test Voltage, t = 2 sec, 50 Hz
Creepage Distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
Min
Max
Unit
TJ
−40
(TJmax −25)
_C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
ICES
–
–
500
A
VCE(sat)
1.40
1.86
2.30
V
–
2.00
–
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 1200 V
Collector−Emitter Saturation Voltage
VGE = 15 V, IC = 200 A, TJ = 25_C
VGE = 15 V, IC = 200 A, TJ = 175_C
Gate−Emitter Threshold Voltage
VGE = VCE, IC = 6 mA
VGE(TH)
4.80
5.52
6.50
V
Gate Leakage Current
VGE = 20 V, VCE = 0 V
IGES
–
−
500
nA
Breakdown Voltage
VGE = 0 V, IC = 1 mA
BVCES
1200
1400
1450
V
Turn−on Delay Time
TJ = 25_C
VCE = 350 V, IC = 170 A, VGE = −5/+15 V,
RG = 10
td(on)
–
302
–
ns
tr
–
102
–
td(off)
–
923
–
tf
–
59
–
Turn−on Switching Loss per Pulse
Eon
–
5.1
–
Turn−off Switching Loss per Pulse
Eoff
–
5.4
–
Rise Time
Turn−off Delay Time
Fall Time
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mJ
NXH200T120H3Q2F2STNG
Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
TJ = 125_C
VCE = 350 V, IC = 170 A, VGE = −5/+15 V,
RG = 10
td(on)
–
276
–
ns
tr
–
97
–
td(off)
–
997
–
tf
–
99
–
Turn−on Switching Loss per Pulse
Eon
–
5.4
–
Turn−off Switching Loss per Pulse
Eoff
–
7.9
–
Cies
–
35615
–
Coes
–
700
–
Cres
–
530
–
Qg
–
1706.4
–
nC
RthJH
–
0.21
–
°C/W
RthJC
–
0.14
–
°C/W
HALF BRIDGE IGBT CHARACTERISTICS
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VCE = 25 V, VGE = 0 V
f = 100 kHz
Reverse Transfer Capacitance
Total Gate Charge
VCE = 600 V, IC = 200 A, VGE = 15 V
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 m,
= 2.87 W/mK
Thermal Resistance − chip−to−case
mJ
pF
NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current
VR = 650 V
IR
–
–
100
A
Diode Forward Voltage
IF = 100 A, TJ = 25_C
VF
1.2
1.48
2.7
V
–
1.90
–
trr
–
26.6
–
ns
Qrr
–
308
–
nC
Peak Reverse Recovery Current
IRRM
–
16.8
–
A
Peak Rate of Fall of Recovery Current
di/dt
–
1659
–
A/s
Err
–
34.5
–
J
trr
–
25.8
–
ns
Qrr
–
294
–
nC
Peak Reverse Recovery Current
IRRM
–
18.0
–
A
Peak Rate of Fall of Recovery Current
di/dt
–
1672
–
A/s
Err
–
35.2
–
J
RthJH
–
0.66
–
°C/W
RthJC
–
0.55
–
°C/W
ICES
–
–
300
A
VCE(sat)
0.8
1.36
2.05
V
–
1.50
–
IF = 100 A, TJ = 175_C
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25_C
VCE = 350 V, IC = 170 A, VGE = −5/+15 V,
RG = 10
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
TJ = 125_C
VCE = 350 V, IC = 170 A
VGE = −5/+15V, RG = 10
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness < 100 m,
= 2.87 W/mK
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 650 V
Collector−Emitter Saturation Voltage
VGE = 15 V, IC = 150 A, TJ = 25_C
VGE = 15 V, IC = 150 A, TJ = 175_C
Gate−Emitter Threshold Voltage
VGE = VCE, IC = 1.2 mA
VGE(TH)
3.5
4.03
6.4
V
Gate Leakage Current
VGE = 20 V, VCE = 0 V
IGES
–
−
300
nA
Breakdown Voltage
VGE = 0 V, IC = 1 mA
BVCES
650
−
−
V
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NXH200T120H3Q2F2STNG
Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
TJ = 25_C
VCE = 350 V, IC = 170 A, VGE = −5/+15 V,
RG = 10
td(on)
–
94
–
ns
tr
–
45
–
td(off)
–
224
–
tf
–
22
–
Turn−on Switching Loss per Pulse
Eon
–
3.1
–
Turn off Switching Loss per Pulse
Eoff
–
2.4
–
td(on)
–
92
–
tr
–
51
–
td(off)
–
244
–
tf
–
19
–
Turn−on Switching Loss per Pulse
Eon
–
4.7
–
Turn off Switching Loss per Pulse
Eoff
–
3.0
–
Cies
–
9316
–
Output Capacitance
Coes
–
249
–
Reverse Transfer Capacitance
Cres
–
34
–
Qg
–
300.9
–
nC
RthJH
–
0.50
–
°C/W
RthJC
–
0.37
–
°C/W
NEUTRAL POINT IGBT CHARACTERISTICS
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Delay Time
Rise Time
TJ = 125_C
VCE = 350 V, IC = 170 A, VGE = −5/+15 V,
RG = 10
Turn−off Delay Time
Fall Time
Input Capacitance
VCE = 25 V, VGE = 0 V, f = 100 kHz
Total Gate Charge
VCE = 480 V, IC = 80 A, VGE = 15 V
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 m,
= 2.87 W/mK
Thermal Resistance − chip−to−case
mJ
ns
mJ
pF
HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current
VR = 1200 V
IR
–
–
100
A
Diode Forward Voltage
IF =150 A, TJ = 25_C
VF
1.6
2.71
3.6
V
–
2.00
–
trr
–
62
–
ns
Qrr
–
4700
–
nC
Peak Reverse Recovery Current
IRRM
–
144
–
A
Peak Rate of Fall of Recovery Current
di/dt
–
4017
–
A/s
Err
–
849
–
J
trr
–
107
–
ns
Qrr
–
12510
–
nC
Peak Reverse Recovery Current
IRRM
–
216
–
A
Peak Rate of Fall of Recovery Current
di/dt
–
3815
–
A/s
Err
–
2647
–
J
RthJH
–
0.49
–
°C/W
RthJC
–
0.38
–
°C/W
IF = 150 A, TJ = 175_C
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V,
RG = 10
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
TJ = 125_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V,
RG = 10
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness < 100 m,
= 2.87 W/mK
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NXH200T120H3Q2F2STNG
Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VF
1.05
1.93
2.80
V
−
1.29
−
RthJH
–
1.35
–
°C/W
RthJC
–
1.24
–
°C/W
VF
1.3
2.35
3.2
V
−
1.50
−
RthJH
–
1.03
–
°C/W
RthJC
–
0.91
–
°C/W
R25
−
22
−
kQ
R100
−
1486
−
Q
Deviation of R25
R/R
−5
−
5
%
Power dissipation
PD
−
200
−
mW
−
2
−
mW/K
HALF BRIDGE INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 7 A, TJ = 25_C
IF = 7 A, TJ = 175_C
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness < 100 m,
= 2.87 W/mK
NEUTRAL POINT INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 30 A, TJ = 25_C
IF = 30 A, TJ = 175_C
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
Thermal grease, Thickness 100 m,
= 2.87 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
T = 100_C
Power dissipation constant
B−value
B(25/50), tolerance ±3%
−
3950
−
K
B−value
B(25/100), tolerance ±3%
−
3998
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Marking
Package
Shipping
NXH200T120H3Q2F2STNG
NXH200T120H3Q2F2STNG
Q2PACK − Case 180AK
with pre−applied thermal interface
material (TIM)
(Pb−Free and Halide−Free)
12 Units / Blister Tray
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NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
350
300
Ic, COLLECTOR CURRENT (A)
Ic, COLLECTOR CURRENT (A)
350
TJ = 25°C
250
VGE = 20 V
200
VGE = 11 V
150
100
50
0
0.0
0.5
1.0
1.5
2.0
300
200
VGE = 20 V
150
VGE = 11 V
100
50
0
2.5
TJ = 175°C
250
0.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Typical Output Characteristics
2.0
2.5
200
180
250
IF, FORWARD CURRENT (A)
300
TJ = 175°C
200
TJ = 25°C
150
100
50
TJ = 25°C
160
140
TJ = 175°C
120
100
80
60
40
20
0
2
4
6
8
10
0
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGE, GATE −EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Diode Forward Characteristics
12
16
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
10
25°C
125°C
8
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
14
12
E OFF , TURN OFF LOSS (mJ)
E ON , TURN ON LOSS (mJ)
Ic, COLLECTOR CURRENT (A)
1.5
Figure 3. Typical Output Characteristics
350
0
1.0
VCE, COLLECTOR − EMITTER VOLTAGE (V)
25°C
125°C
10
6
4
2
8
6
4
2
0
0
0
50
100
150
200
250
300
0
350
IC (A)
50
100
150
200
IC (A)
250
300
350
Figure 7. Typical Turn OFF Loss vs. IC
Figure 6. Typical Turn ON Loss vs. IC
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NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
1200
1000
250
TIME (ns)
600
+15V,
5V V
VVGE=
V, −−5
GE = +15
35 0V
VVCE=
V
CE = 350
RG=10
W
RG = 10
400
T d(on)
300
T d(off)
800
TIME (ns)
350
25°C
125°C
V GE
= + 15V
VGE
= +15
V, −5, −5
VV
V CE
= 35 V0 V
VCE
= 350
R G=10 W
RG = 10
200
150
tr
100
200
50
25°C
125°C
tf
0
0
100
150
200
250
300
350
50
100
150
200
250
300
350
IC, COLLECTOR CURRENT (A)
Figure 8. Typical Turn−Off Switching Time vs. IC
Figure 9. Typical Turn−On Switching Time vs. IC
0.4
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
Qrr, REVERSE RECOVERY CHARGE (C)
40
25°C
125°C
30
20
10
0
V
+15
V, −5 V
VGE
, −5V
GE =+15V
VCE = 35
0V
V
CE =W350 V
Rg=10
RG = 10
0.35
0.3
25°C
125°C
0.25
0.2
0.15
0.1
0.05
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Typical Reverse Recovery Time vs. IC
Figure 11. Typical Reverse Recovery Charge vs. IC
2000
22
20
di/dt, DIODE CURRENT SLOPE (A/s)
I rrm , REVERSE RECOVERY CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
50
t rr , REVERSE RECOVERY TIME (ns)
50
0
18
16
14
12
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
10
8
25°C
125°C
6
4
1600
1200
800
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
400
25°C
125°C
0
0
50
100
150
200
250
300
350
0
IC, COLLECTOR CURRENT (A)
50
100
150
200
250
300
350
IC, COLLECTOR CURRENT (A)
Figure 12. Typical Reverse Recovery Peak Current vs. IC
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Figure 13. Typical Diode Current Slope vs. IC
NXH200T120H3Q2F2STNG
40
40
35
35
E rr, REVERSE RECOVERY ENERGY J)
Err, REVERSE RECOVERY ENERGY
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
30
25
20
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
15
10
25°C
125°C
5
0
0
50
100
150
200
250
300
30
25°C
125°C
25
20
15
10
5
0
350
10
15
20
30
35
RG ()
Figure 14. Typical Reverse Recovery Energy vs. IC
Figure 15. Typical Reverse Recovery Energy Loss
vs. RG
15
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
16
E OFF , TURN OFF LOSS (mJ)
12
8
4
5
10
15
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
12
25°C
125°C
0
20
25
30
25°C
125°C
9
6
3
0
35
5
10
15
RG ()
Figure 16. Typical Turn ON Loss vs. RG
3000
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
800
700
T d(on)
25°C
125°C
600
TIME (ns)
500
400
300
20
RG ()
25
30
35
Figure 17. Typical Turn OFF vs. RG
900
TIME (ns)
25
IC (A)
20
EON, TURN ON LOSS (mJ)
VGE = +15 V, −5 V
VCE = 350 V
RG = 170
2500
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
2000
25°C
125°C
T d(off)
1500
1000
tr
200
500
100
tf
0
0
5
10
15
20
25
30
5
35
RG, GATE RESISTOR ()
10
15
20
25
30
35
RG, GATE RESISTOR ()
Figure 18. Typical Turn ON Switching Time vs. RG
Figure 19. Typical Turn OFF Switching Time vs. RG
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NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
350
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
45
40
Qrr, REVERSE RECOVERY CHARGE (C)
trr, REVERSE RECOVERY TIME (ns)
50
25°C
125°C
35
30
25
20
15
10
300
250
200
150
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
100
25°C
125°C
50
0
5
10
15
20
25
30
35
5
10
RG, GATE RESISTOR ()
20
25
30
35
RG, GATE RESISTOR ()
Figure 21. Typical Reverse Recovery Energy Loss
vs. RG
Figure 20. Typical Reverse Recovery Energy vs. IC
1900
19
17
15
di/dt, DIODE CURRENT SLOPE (A/s)
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
25°C
125°C
13
11
9
7
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
1700
1500
1300
1100
900
700
500
5
5
10
15
20
25
30
5
35
10
RG, GATE RESISTOR ()
15
VCE = 600 V
IC = 200 A
12
9
6
3
0
25
30
Figure 23. Typical Turn OFF vs. RG
15
0
20
RG, GATE RESISTOR ()
Figure 22. Typical Turn ON Loss vs. RG
Vge (V)
Irrm, REVERSE RECOVERY CURRENT
15
150 300 450 600 750 900 1050 1200 1350 1500 1650 1800 1950
Charge (nC)
Figure 24. Gate Voltage vs. Gate Charge
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10
35
NXH200T120H3Q2F2STNG
DUTY CYCLE PEAK RESPONSE [°C/W]
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE ON TIME [s]
DUTY CYCLE PEAK RESPONSE [°C/W]
Figure 25. IGBT Transient Thermal Impedance
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE ON TIME [s]
Figure 26. Diode Transient Thermal Impedance
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
500
1000
IC, COLLECTOR CURRENT (A)
400
350
300
Ic Chip
IC, COLLECTOR CURRENT (A)
450
250
200
150
100
VGE =+15 V −5 V, TJ = TJmax−25°C
100
50 ms
1 ms
10
100 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase in temperature
1
50
0.1
0
0
200
400
600
800
1000
1200
1400
1.000
10.000
100.000
1000.000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 27. HB IGBT RBSOA
Figure 28. HB IGBT FBSOA
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11
10000.000
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
250
250
Ic, COLLECTOR CURRENT (A)
Ic, COLLECTOR CURRENT (A)
TJ = 25°C
200
VGE = 20 V
150
VGE = 11 V
100
50
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGE = 20 V
150
VGE = 11 V
100
50
0
1.8
TJ = 175°C
200
0.0
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1.0
1.5
2.0
2.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 29. Typical Output Characteristics
Figure 30. Typical Output Characteristics
250
200
200
160
IF, FORWARD CURRENT (A)
Ic, COLLECTOR CURRENT (A)
180
TJ = 175°C
150
TJ = 25°C
100
50
140
TJ = 175°C
120
100
TJ = 25°C
80
60
40
20
0
0
1
2
3
4
5
6
7
0
8
0.0
VGE, GATE−EMITTER VOLTAGE (V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF, FORWARD VOLTAGE (V)
Figure 31. Typical Transfer Characteristics
Figure 32. Typical Diode Forward Characteristics
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12
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
8
25°C
125°C
6
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
6
EOFF, TURN OFF LOSS (mJ)
7
EON, TURN ON LOSS (mJ)
7
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
5
4
3
2
25°C
125°C
5
4
3
2
1
1
0
0
0
120
50
100
150
250
300
350
0
50
100
150
200
250
350
IC (A)
Figure 33. Typical Turn ON Loss vs. IC
Figure 34. Typical Turn OFF Loss vs. IC
400
25°C
125°C
T d(on)
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
25°C
125°C
300
80
T d(off)
TIME (ns)
TIME (ns)
300
IC (A)
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
100
200
tr
60
200
40
100
20
tf
0
0
0
50
100
150
200
250
300
350
0
50
IC, COLLECTOR CURRENT (A)
Qrr, REVERSE RECOVERY CHARGE (C)
trr, REVERSE RECOVERY TIME (ns)
20
120
100
80
60
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
25°C
125°C
0
200
250
300
350
Figure 36. Typical Turn OFF Switching Time vs. IC
140
20
150
IC, COLLECTOR CURRENT (A)
Figure 35. Typical Turn ON Switching Time vs. IC
40
100
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
18
16
25°C
125°C
14
12
10
8
6
4
2
0
0
50
100
150
200
250
300
350
0
IC, COLLECTOR CURRENT (A)
50
100
150
200
250
300
350
IC, COLLECTOR CURRENT (A)
Figure 38. Typical Reverse Recovery Charge vs. IC
Figure 37. Typical Reverse Recovery Time vs. IC
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13
NXH200T120H3Q2F2STNG
354
5000
304
4500
di/dt, DIODE CURRENT SLOPE (A/s)
Irrm, REVERSE RECOVERY CURRENT
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
254
204
154
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
104
25°C
125°C
54
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
4000
25°C
125°C
3500
3000
2500
2000
1500
1000
4
0
50
100
150
200
250
300
0
350
50
IC, COLLECTOR CURRENT (A)
3
Err, REVERSE RECOVERY ENERGY (mJ)
Err, REVERSE RECOVERY ENERGY (mJ)
4
25°C
125°C
3.5
3
2.5
2
1.5
1
0.5
250
300
350
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
25°C
125°C
2.5
2
1.5
1
0.5
0
0
0
50
100
150
200
250
300
5
350
10
15
IC (A)
10
6
7
25°C
125°C
6
30
35
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
5
EOFF, TURN OFF LOSS (mJ)
8
25
Figure 42. Typical Turn OFF Switching Time vs. IC
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
9
20
RG ()
Figure 41. Typical Turn ON Switching Time vs. IC
EON, TURN ON LOSS (mJ)
200
Figure 40. Typical Turn OFF Loss vs. IC
VGE = +15 V, −5 V
VCE = 350 V
RG = 10
4.5
150
IC, COLLECTOR CURRENT (A)
Figure 39. Typical Turn ON Loss vs. IC
5
100
5
4
3
2
25°C
125°C
4
3
2
1
1
0
0
5
10
15
20
25
30
35
5
RG ()
10
15
20
25
30
RG ()
Figure 43. Typical Turn ON Loss vs. RG
Figure 44. Typical Turn OFF vs. RG
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14
35
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
600
250
200
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
500
25°C
125°C
T d(on)
TIME (ns)
TIME (ns)
400
150
T d(off)
25°C
125°C
300
100
200
tr
50
100
tf
0
0
5
10
15
20
25
30
35
5
10
Rg, GATE RESISTOR ()
25°C
125°C
135
115
95
75
55
35
35
12
10
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
8
25°C
125°C
6
4
2
0
15
5
10
15
20
25
30
5
35
10
Rg, GATE RESISTOR ()
15
20
25
30
35
Rg, GATE RESISTOR ()
Figure 48. Typical Reverse Recovery Charge vs. RG
Figure 47. Typical Reverse Recovery Time vs. RG
4500
255
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
205
di/dt, DIODE CURRENT SLOPE (A/s)
Irrm, REVERSE RECOVERY CURRENT (A)
30
Figure 46. Typical Turn OFF Switching Time vs. RG
Qrr, REVERSE RECOVERY CHARGE (C)
trr, REVERSE RECOVERY TIME (ns)
155
25
14
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
175
20
Rg, GATE RESISTOR ()
Figure 45. Typical Turn ON Switching Time vs. RG
195
15
25°C
125°C
155
105
55
VGE = +15 V, −5 V
VCE = 350 V
IC = 170 A
4000
3500
3000
2500
2000
1500
1000
5
500
5
10
15
20
25
30
5
35
Rg, GATE RESISTOR ()
10
15
20
25
30
Rg, GATE RESISTOR ()
Figure 49. Typical Reverse Recovery Peak Current vs. RG
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15
Figure 50. Typical Di/Dt vs. RG
35
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
15
VCE = 480 V
IC = 80 A
Vge (V)
12
9
6
3
0
0
25
50 75
100 125 150 175 200 225 250 275 300 325 350
CHARGE (nC)
DUTY CYCLE PEAK RESPONSE [°C/W]
Figure 51. Gate Voltage vs. Gate Charge
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE ON TIME [s]
DUTY CYCLE PEAK RESPONSE [°C/W]
Figure 52. IGBT Transient Thermal Impedance
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE ON TIME [s]
Figure 53. Diode Transient Thermal Impedance
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16
10
100
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
1000
IC, COLLECTOR CURRENT (A)
Ic Chip
300
200
100
100
50 ms
1 ms
10
1
0
0
200
400
600
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase in temperature
0.1
1.000
800
100 ms
dc operation
VGE = +15 V −5 V, TJ = TJmax−25°C
10.000
100.000
1000.000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 54. NP IGBT RBSOA
Figure 55. NP IGBT FBSOA
TYPICAL CHARACTERISTICS − HALF BRIDGE INVERSE DIODE
200
IF, FORWARD CURRENT (A)
180
160
140
TJ = 175°C
120
TJ = 25°C
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
VF, FORWARD VOLTAGE (V)
Figure 56. Diode Forward Characteristic
DUTY CYCLE PEAK RESPONSE [°C/W]
IC, COLLECTOR CURRENT (A)
400
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE ON TIME [s]
Figure 57. Diode Transient Thermal Impedance
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17
10
100
10000.000
NXH200T120H3Q2F2STNG
TYPICAL CHARACTERISTICS − NEUTRAL POINT INVERSE DIODE
200
TJ = 175°C
IF, FORWARD CURRENT (A)
180
160
140
120
TJ = 25°C
100
80
60
40
20
0
0
1
2
3
4
5
6
VF, FORWARD VOLTAGE (V)
DUTY CYCLE PEAK RESPONSE [°C/W]
Figure 58. Diode Forward Characteristic
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME [s]
Figure 59. Diode Transient Thermal Impedance
TYPICAL CHARACTERISTICS – THERMISTOR
Figure 60. Thermistor Characteristics
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18
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM56, 93x47 (SOLDER PIN)
CASE 180AK
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “ G”, may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63482G
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PIM56 93X47 (SOLDER PIN)
PAGE 1 OF 1
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