NZ23C5V6ALT1G

NZ23C5V6ALT1G 24 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection www.onsemi.com This dual monolithic silicon Zener diodes is designed for applications requiring transient overvoltage protection capability. This is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The dual junction common anode design protects two separate lines using only one package. This device is ideal for situations where board space is at a premium. 1 3 2 MARKING DIAGRAM 3 Features • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 3 V Standard Zener Breakdown Voltage Range − 5.6 V Peak Power − 24 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 0.1 mA Flammability Rating UL 94 V−0 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 SOT−23 CASE 318 STYLE 12 2 5V6MG G 1 5V6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NZ23C5V6ALT1G Package Shipping† SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel © Semiconductor Components Industries, LLC, 2009 October, 2016 − Rev. 1 1 Publication Order Number: NZ23C5V6AL/D NZ23C5V6ALT1G MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 24 W Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 °mW° mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR IF VC VBR VRWM V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) 24 WATTS Breakdown Voltage Max Zener Impedance (Note 5) VC @ IPP (Note 6) VRWM @ IT ZZT @ 20mA ZZK @ IZK VC IPP QVBR Device Device Marking IR @ VRWM Volts mA Min Nom Max mA W W mA V A mV/5C NZ23C5V6ALT1G 5V6 1.0 0.1 5.2 5.6 6.0 5.0 11 1600 0.25 8.0 3.0 1.26 VBR (Note 4) (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 5 and derate per Figure 6 www.onsemi.com 2 NZ23C5V6ALT1G TYPICAL CHARACTERISTICS 1000 15 100 12 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 10 1 6 0.1 3 0 −40 0 + 100 + 50 TEMPERATURE (°C) + 150 0.01 −40 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve is bidirectional mode, lower curve is unidirectional mode) 320 PD, POWER DISSIPATION (mW) 300 C, CAPACITANCE (pF) 280 240 200 5.6 V 160 120 80 40 250 ALUMINA SUBSTRATE 200 150 100 FR−5 BOARD 50 0 0 0 1 2 3 0 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve (Upper curve is unidirectional mode, lower curve is bidirectional mode) www.onsemi.com 3 NZ23C5V6ALT1G PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms VALUE (%) 100 PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform 100 Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 1 200 Figure 6. Pulse Derating Curve 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) UNIDIRECTIONAL RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). www.onsemi.com 4 1000 NZ23C5V6ALT1G TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND NZ23C5V6ALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O NZ23C5V6ALT1G CLOCK CONTROL BUS GND NZ23C5V6ALT1G www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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