P2N2222AG

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 --55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO-92 CASE 29 STYLE 17 http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.3 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM P2N2 222A AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device P2N2222AG P2N2222ARL1G Package TO--92 (Pb--Free) TO--92 (Pb--Free) Shipping† 5000 Units/Bulk 2000/Tape & Ammo *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: P2N2222A/D April, 2007 - Rev. 5 - 1 P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector--Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = --55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1) Collector--Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base--Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL-SIGNAL CHARACTERISTICS Current--Gain -- Bandwidth Product (Note 2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small--Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT Cobo Cibo hie 300 --2.0 0.25 --50 75 5.0 25 ---8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF pF kΩ hFE 35 50 75 35 100 50 40 --0.6 -----300 --0.3 1.0 1.2 2.0 -V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 40 75 ---10 0.01 10 10 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit 6.0 ------- IEBO ICEO IBEX nAdc nAdc nAdc 10 20 VCE(sat) Vdc VBE(sat) Vdc hre X 10 --4 hfe -- hoe mMhos rb′Cc NF ps dB http://onsemi.com 2 P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = --2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf ----10 25 225 60 ns ns ns ns Symbol Min Max Unit SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 --2 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1 kΩ 200 +16 V 0 < 2 ns CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1k 1N914 --4 V +30 V 200 --14 V < 20 ns CS* < 10 pF Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 TJ = 125°C 25°C --55°C VCE = 1.0 V VCE = 10 V 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain http://onsemi.com 3 P2N2222A VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.005 IC = 1.0 mA 10 mA 150 mA 500 mA 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts -- 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn-On Time Figure 6. Turn-Off Time 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = 1.0 mA, RS = 150 Ω 500 mA, RS = 200 Ω 100 mA, RS = 2.0 kΩ 50 mA, RS = 4.0 kΩ NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 6.0 4.0 2.0 0 50 IC = 50 mA 100 mA 500 mA 1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 4 P2N2222A f T, CURRENT--GAIN BANDWIDTH PRODUCT (MHz) 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 9. Capacitances Figure 10. Current-Gain Bandwidth Product 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k COEFFICIENT (mV/°C) 1.0 V +0.5 0 --0.5 --1.0 --1.5 --2.0 --2.5 RθVB for VBE RθVC for VCE(sat) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://onsemi.com 5 P2N2222A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29--11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 -----MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ K XX H V 1 D G J C N N SECTION X-X R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER K G XX V 1 D J C N SECTION X-X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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