QRE1113

QRE1113, QRE1113GR, QRE1114GR Miniature Reflective Object Sensor Features • • • • • • www.onsemi.com Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing Two Leadform Options: ♦ Through Hole (QRE1113) ♦ SMT Gull Wing (QRE1113GR & QRE1114GR) Two Packaging Options: ♦ Tube (QRE1113) ♦ Tape and Reel (QRE1113GR & QRE1114GR) Pin 1: Anode Pin 2: Cathode Pin 3: Collector Pin 4: Emitter 1 2 3 4 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit TOPR Operating Temperature Parameter −40 to +85 °C TSTG Storage Temperature −40 to +90 °C TSOL−I Soldering Temperature (Iron) (Notes 2, 3, 4) 240 for 5 s °C TSOL−F Soldering Temperature (Flow) (Notes 3, 4) 260 for 10 s °C REFLECTIVE RECTANGULAR SURFACE MOUNT CASE 100CY EMITTER IF Continuous Forward Current 50 mA VR Reverse Voltage 5 V IFP Peak Forward Current (Note 5) 1 A PD Power Dissipation (Note 1) 75 mW VCEO Collector-Emitter Voltage 30 V VECO SENSOR Emitter-Collector Voltage 5 V IC Collector Current 20 mA PD Power Dissipation (Note 1) 50 mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate power dissipation linearly 1.00 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16″ (1.6 mm) from housing. 5. Pulse conditions: tp = 100 ms; T = 10 ms. This document, and the information contained herein, is CONFIDENTIAL AND PROPRIETARY and the property of Semiconductor Components Industries, LLC., dba ON Semiconductor. It shall not be used, published, disclosed or disseminated outside of the Company, in whole or in part, without the written permission of ON Semiconductor. Reverse engineering of any or all of the information contained herein is strictly prohibited. E 2020, SCILLC. All Rights Reserved. © Semiconductor Components Industries, LLC, 2002 February, 2020 − Rev. 7 1 REFLECTIVE RECTANGULAR THROUGH HOLE CASE 100AQ ORDERING INFORMATION Package Shipping† QRE1113 Reflective Rectangular (Through Hole) 1600 / Tube QRE1113GR & QRE1114GR Reflective Rectangular (Surface Mount) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: QRE1113/D QRE1113, QRE1113GR, QRE1114GR ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit 1.2 1.6 V 10 mA INPUT DIODE VF Forward Voltage IF = 20 mA lR Reverse Leakage Current VR = 5 V Peak Emission Wavelength IF = 20 mA lPE 940 nm OUTPUT TRANSISTOR lD Collector-Emitter Dark Current IF = 0 mA, VCE = 20 V On-State Collector Current IF = 20 mA, VCE = 5 V (Note 6) Cross-Talk Collector Current 100 nA COUPLED lC(ON) QRE1113 & QRE1113GR 0.10 QRE1114GR 0.30 0.90 mA 0.60 mA IF = 20 mA, VCE = 5 V (Note 7) 1 mA Saturation Voltage IF = 20 mA, IC = 50 mA (Note 6) 0.3 V tr Rise Time VCC = 5 V, lC(ON) = 100 mA, RL = 1 kW tf Fall Time ICX VCE(SAT) 20 ms 20 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Measured using an aluminum alloy mirror at d = 1 mm. 7. No reflective surface at close proximity. REFLOW PROFILE 260°C max. for 10 sec. max. 1°C to 5°C/sec Temperature (5C) 260°C 1°C to 5°C/sec 220°C Pre−heating 180°C to 200°C 60 sec. max. above 220°C 120 sec. max. Time (seconds) Figure 1. Reflow Profile www.onsemi.com 2 QRE1113, QRE1113GR, QRE1114GR 1.0 1.0 IF = 10 mA VCE = 5 V TA = 25˚C 0.8 IC(ON) − COLLECTOR CURRENT (mA) IC(ON) − NORMALIZED COLLECTOR CURRENT TYPICAL PERFORMANCE CURVES d 0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 0.0 Mirror 0 1 2 3 4 QRE1113 & QRE1113GR 0.8 0.6 0.4 QRE1114GR 0.2 0.0 5 0 4 8 d−DISTANCE (mm) 2.0 20 102 d = 1 mm, 90% reflection TA = 25˚C 1.6 1.4 IF = 25mA 1.2 IF =20mA 1.0 0.8 IF =15mA 0.6 IF =10mA 0.4 IF =5mA 0.2 0.0 0.1 16 Figure 3. Collector Current vs. Forward Current ICEO − NORMALIZED DARK CURRENT IC(ON) − NORMALIZED COLLECTOR CURRENT Figure 2. Normalized Collector Current vs. Distance between Device and Reflector 1.8 12 IF − FORWARD CURRENT (mA) 1 Normalized to: VCE = 10 V TA = 25˚C VCE − COLLECTOR EMITTER VOLTAGE (V) VCE = 5 V 101 100 10−1 10−2 25 10 VCE = 10 V 40 55 70 TA − AMBIENT TEMPERATURE (˚C) Figure 4. Normalized Collector Current vs. Collector to Emitter Voltage Figure 5. Collector Emitter Dark Current (Normalized) vs. Ambient Temperature www.onsemi.com 3 85 QRE1113, QRE1113GR, QRE1114GR TYPICAL PERFORMANCE CURVES (Continued) 100 50 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C RISE AND FALL TIME (ms) IF − FORWARD CURRENT (mA) TA = 25˚C 40 30 20 10 0 1.0 1.1 1.2 1.3 1.4 tf IC = 0.3 mA tr 10 tf tr IC = 1 mA 1 0.1 1.5 1 10 RL − LOAD RESISTANCE (kW) VF − FORWARD VOLTAGE (V) Figure 6. Forward Current vs. Forward Voltage Figure 7. Rise and Fall Time vs. Load Resistance RELATIVE RADIANT INTENSITY VF − FORWARD VOLTAGE (V) 3.0 2.5 2.0 IF = 50 mA 1.5 IF = 20 mA IF = 10 mA 1.0 0.5 0.0 −40 −20 0 20 40 60 1.0 0.9 0.8 0.7 0.6 80 0.4 0.2 0 0.2 0.4 ANGULAR DISPLACEMENT TA − AMBIENT TEMPERATURE (˚C) Figure 8. Forward Voltage vs. Ambient Temperature Figure 9. Radiation Diagram www.onsemi.com 4 0.6 QRE1113, QRE1113GR, QRE1114GR TAPING DIMENSIONS FOR GR OPTION Progressive Direction 2.0±0.05 4.0 ø1.5 0.25 1.75 5.5±0.05 12.0±0.3 4.75 3.73 8.0 1.98 General tolerance ±0.1 Dimensions in mm Figure 10. Taping Dimensions for GR Option REEL DIMENSIONS 2.2 ± 0.5 ø178.0 ± 1.0 ø60.0 ± 0.5 ø13.0 ± 0.5 12.0 ± 0.15 9.0 ± 0.5 Figure 11. Reel Dimensions www.onsemi.com 5 QRE1113, QRE1113GR, QRE1114GR Precautionary Notes 1. Refer to application note AND8003/D, “Storage and Handling of Dry Packed Surface Mounted Devices” for details of handling procedure. 2. Product soldering terminals are silver plated and oxidization may occur with prolonged exposure to ambient environment. Oxidized terminal may have poor solderability performance. Keep unsealed devices in moisture barrier bag sealed with desiccant or in dry cabinet at