RHRP15120-F102

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. RHRP15120 November 2013 Data Sheet 15 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 75 ns (@ IF = 15 A) The RHRP15120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Ordering Information PART NUMBER PACKAGE Packaging BRAND JEDEC TO-220AC RHRP15120 TO-220AC-2L RHR15120 ANODE CATHODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP15120 UNIT Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 140oC) 1200 V 15 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20 kHz) 30 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60 Hz) 200 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 20 mJ -65 to 175 oC ©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 1 Publication Order Number: RHRP15120/D RHRP15120 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX IF = 15 A TEST CONDITION - - 3.2 V IF = 15 A, TC = 150oC - - 2.6 V VR = 1200 V - - 100 µA VR = 1200 V, TC = 150oC - - 500 µA IF = 1 A, dIF/dt = 100 A/µs - - 65 ns IF = 15 A, dIF/dt = 100 A/µs - - 75 ns ta IF = 15 A, dIF/dt = 100 A/µs - 36 - ns tb IF = 15 A, dIF/dt = 100 A/µs - 28 - ns Qrr IF = 15 A, dIF/dt = 100 A/µs - 150 - nC VR = 10 V, IF = 0 A - 55 - pF 1.5 oC/W VF IR Trr CJ RθJC - - UNIT DEFINITIONS VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). Qrr = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 1000 175oC 100oC IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 100 25oC 10 175oC 100 100oC 10 1 25oC 0.1 1 0.01 0.5 0 1 2 3 4 5 VF , FORWARD VOLTAGE (V) 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE www.onsemi.com 2 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP15120 Typical Performance Curves 75 (Continued) 150 TC = 100oC, dIF/dt = 100A/µs TC = 25oC, dIF/dt = 100A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 125 60 trr 45 ta 30 15 0 0.5 tb 1 5 10 100 trr 75 ta 50 tb 25 0 0.5 15 1 IF , FORWARD CURRENT (A) IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 100A/µs trr 100 ta 0 0.5 tb 1 5 15 10 15 DC 12 SQ. WAVE 9 6 3 0 100 130 115 FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT 160 FIGURE 6. CURRENT DERATING CURVE 175 CJ , JUNCTION CAPACITANCE (pF) 145 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) 150 125 100 75 50 25 0 0 15 FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT 200 50 10 IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 150 5 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE www.onsemi.com 3 175 RHRP15120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS www.onsemi.com 4 t ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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