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SC431AVSNT1G

SC431AVSNT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO236-3

  • 描述:

    IC VREF SHUNT ADJ 1% SOT23-3

  • 数据手册
  • 价格&库存
SC431AVSNT1G 数据手册
Programmable Precision References NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series The NCP431/NCP432 integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V using two external resistors. These devices exhibit a wide operating current range of 40 mA to 100 mA with a typical dynamic impedance of 0.22 W. The characteristics of these references make them excellent replacements for zener diodes in many applications such as digital voltmeters, power supplies, and op amp circuitry. The 2.5 V reference makes it convenient to obtain a stable reference from 5.0 V logic supplies, and since the NCP431/ NCP432 operates as a shunt regulator, it can be used as either a positive or negative voltage reference. Low minimum operating current makes this device an ideal choice for secondary regulators in SMPS adapters with extremely low no−load consumption. www.onsemi.com Pin 1. Reference 2. Anode 3. Cathode 3 STRAIGHT LEAD BULK PACK 12 TO−92 LP SUFFIX CASE 29−10 Features • Programmable Output Voltage to 36 V • Low Minimum Operating Current: 40 mA, Typ @ 25°C • Voltage Reference Tolerance: ±0.5%, Typ @ 25°C • • • • • • • • • • • Voltage Adapters Switching Power Supply Precision Voltage Reference Charger Instrumentation © Semiconductor Components Industries, LLC, 2011 April, 2021 − Rev. 17 3 BENT LEAD TAPE & REEL AMMO PACK SOIC−8 NB D SUFFIX CASE 751 1 1 Cathode Reference Anode Anode Anode Anode NC NC (Top View) 3 1 SOT−23 SN SUFFIX CASE 318 2 NCP431/SC431 Pin 1. Reference 2. Cathode 3. Anode Typical Applications 2 TO−92 LPRA SUFFIX CASE 29−10 8 (NCP431B/NCP432B) Low Dynamic Output Impedance, 0.22 W Typical Sink Current Capability of 40 mA to 100 mA Equivalent Full−Range Temperature Coefficient of 50 ppm/°C Typical Temperature Compensated for Operation over Full Rated Operating Temperature Range SC Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices 1 NCP432/SC432 Pin 1. Cathode 2. Reference 3. Anode ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. 1 Publication Order Number: NCP431/D NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series Reference (R) Cathode (K) Reference (R) Cathode (K) 2.5 V ref Anode (A) Anode (A) Figure 1. Symbol Figure 2. Representative Block diagram This device contains 20 active transistors MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted) Symbol VKA Rating Value Unit 37 V −100 to +150 mA −5 to +10 mA 150 °C Cathode to Anode Voltage IK Cathode Current Range, Continuous Iref Reference Input Current Range, Continuous TJ Operating Junction Temperature TA Operating Ambient Temperature Range −40 to +125 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation @ TA = 25°C Derate above 25°C Ambient Temperature D, LP Suffix Plastic Package SN1 Suffix Plastic Package PD HBM CDM W 0.70 0.52 Total Power Dissipation @ TC = 25°C Derate above 25°C Case Temperature D, LP Suffix Plastic Package 1.5 ESD Rating (Note 1) Human Body Model per JEDEC JESD22−A114F Charged Device Model per JEDEC JESD22−C101E W V >2000 >1000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device contains latch−up protection and exceeds ±100 mA per JEDEC standard JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VKA IK Min Max Unit Cathode to Anode Voltage Condition Vref 36 V Cathode Current 0.04 100 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. THERMAL CHARACTERISTICS Symbol Characteristic LP Suffix Package (50 mm2 x 35 mm Cu) D Suffix Package (50 mm2 x 35 mm Cu) SN Suffix Package (10 mm2 x 35 mm Cu) Unit RQJA Thermal Resistance, Junction−to−Ambient 176 210 255 °C/W RQJL Thermal Resistance, Junction−to−Lead (Lead 3) 75 68 80 °C/W www.onsemi.com 2 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.) NCP431AC Symbol Vref Min Characteristic Reference Input Voltage VKA = Vref, IK = 1 mA TA = 25°C TA = Tlow to Thigh (Figure 3, Note 2) 2.475 2.500 2.525 2.475 2.500 2.525 Reference Input Voltage Deviation Over Temperature Range (Figure 3, Notes 3, 4) VKA= Vref, IK = 1 mA DVref DVKA Ratio of Change in Reference Input Voltage to Change in Cathode to Anode Voltage IK = 1 mA (Figure 4), DVKA = 10 V to Vref DVKA = 36 V to 10 V DIrefT Max Min Typ Max Min Typ Max Unit V DVrefT Iref Typ NCP431AV/ SC431AV NCP431AI − − − 2.475 2.500 2.525 2.475 2.500 2.525 2.465 2.500 2.525 2.460 2.500 2.525 − 5.0 10 − 10 15 mV mV/ V − − −1.85 −0.80 −3.1 −1.8 − − −1.85 −0.80 −3.1 −1.8 − − −1.85 −0.80 −3.1 −1.8 Reference Input Current (Figure 4) IK = 1 mA, R1 = 220 k, R2 = R TA = −40°C to +125°C − 81 190 − 81 190 − 81 190 Reference Input Current Deviation Over Temperature Range (Figure 4, Note 3) IK = 1 mA, R1 = 10 k, R2 = R − 22 55 − 22 55 − 22 55 nA nA Imin Minimum Cathode Current For Regulation VKA = Vref (Figure 3) − 40 60 − 40 60 − 40 60 mA Ioff Off−State Cathode Current (Figure 5) VKA = 36 V, Vref = 0 V − 180 1000 − 180 1000 − 180 1000 nA Dynamic Impedance (Figure 3, Note 5) VKA = Vref, DIK = 1.0 mA to 100 mA f v 1.0 kHz − 0.22 0.5 − 0.22 0.5 − 0.22 0.5 W |ZKA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Tlow = −40°C for NCP431AI, NCP431AV, SC431AV = 0°C for NCP431AC Thigh = 70°C for NCP431AC = 85°C for NCP431AI = 125°C for NCP431AV, SC431AV 3. Guaranteed by design 4. The deviation parameter DVrefT is defined as the difference between the maximum and minimum values obtained over the full operating ambient temperature range that applies. ǒ The average temperature coefficient of the reference input voltage, Vref is defined as: V ppm ref ° C + DV V ref @25° C ref DT Ǔ 106 + A DV DT ref 10 6 ǒVref@25° CǓ A aVref can be positive or negative depending on whether Vref Min or Vref Max occurs at the lower ambient temperature. Example: DVrefT = 17 mV and slope is positive Vref = 2.5 V, DTA = 165°C (from −40°C to +125°C) aV ref + 0.017 @ 10 6 165 @ 2.5 + 41.2 ppmń° C 5. The dynamic impedance ZKA is defined as: (|ZKA| = (DVKA/DIK). When the device is programmed with two external resistors, R1 and R2, the total dynamic impedance of the circuit is defined as: |ZKA’| [ |ZKA| (1 + (R1/R2)). 6. SC431AVSNT1G − Tlow = −40°C, Thigh = 125°C. Guaranteed by design. SC Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 3 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.) NCP431BC NCP432BC Symbol Vref Reference Input Voltage VKA = Vref, IK = 1 mA TA = 25°C TA = Tlow to Thigh (Figure 3, Note 7) DVrefT Reference Input Voltage Deviation Over Temperature Range (Figure 3, Notes 8, 9) VKA= Vref, IK = 1 mA DVref DVKA Ratio of Change in Reference Input Voltage to Change in Cathode to Anode Voltage IK = 1 mA (Figure 4), DVKA = 10 V to Vref DVKA = 36 V to 10 V Iref DIrefT Min Characteristic Typ NCP431BI NCP432BI Max Min Typ NCP/SC431BV NCP/SC432BV Max Min Typ Max Unit V 2.4875 2.500 2.5125 2.4875 2.500 2.5125 2.4875 2.500 2.5125 2.4875 2.500 2.5125 2.4775 2.500 2.5125 2.4725 2.500 2.5125 − − − − − − − 5.0 10 1− − − 10 15 15 mV mV/ V − − −1.85 −0.80 −3.1 −1.8 − − −1.85 −0.80 −3.1 −1.8 − − −1.85 −0.80 −3.1 −1.8 Reference Input Current (Figure 4) IK = 1 mA, R1 = 220 k, R2 = R TA = −40°C to +125°C − 81 190 − 81 190 − 81 190 Reference Input Current Deviation Over Temperature Range (Figure 4, Note 8) IK = 1 mA, R1 = 10 k, R2 = R − 22 55 − 22 55 − 22 55 nA nA Imin Minimum Cathode Current For Regulation VKA = Vref (Figure 3) − 40 60 − 40 60 − 40 60 mA Ioff Off−State Cathode Current (Figure 5) VKA = 36 V, Vref = 0 V − 180 1000 − 180 1000 − 180 1000 nA Dynamic Impedance (Figure 3, Note 10) VKA = Vref, DIK = 1.0 mA to 100 mA f v 1.0 kHz − 0.22 0.5 − 0.22 0.5 − 0.22 0.5 W |ZKA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Tlow = −40°C for NCP431BI, NCP431BV, NCP432BI, NCP432BV, SC431B, SC432B = 0°C for NCP431BC, NCP432BC Thigh = 70°C for NCP431BC, NCP432BC = 85°C for NCP431BI, NCP432BI = 125°C for NCP431BV, NCP432BV, SC431BV, SC432BV 8. Guaranteed by design 9. The deviation parameter DVrefT is defined as the difference between the maximum and minimum values obtained over the full operating ambient temperature range that applies. ǒ The average temperature coefficient of the reference input voltage, Vref is defined as: V ppm ref ° C + DV V ref @25° C ref DT Ǔ 106 + A DV DT ref 10 6 ǒVref@25° CǓ A aVref can be positive or negative depending on whether Vref Min or Vref Max occurs at the lower ambient temperature. Example: DVrefT = 17 mV and slope is positive Vref = 2.5 V, DTA = 165°C (from −40°C to +125°C) aV ref + 0.017 @ 10 6 165 @ 2.5 + 41.2 ppmń° C 10. The dynamic impedance ZKA is defined as: (|ZKA| = (DVKA/DIK). When the device is programmed with two external resistors, R1 and R2, the total dynamic impedance of the circuit is defined as: |ZKA’| [ |ZKA| (1 + (R1/R2)) 11. SC431BVSNT1G, SC432BVSNT1G − Tlow = −40°C, Thigh = 125°C. Guaranteed by design. SC Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 4 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series Input Input VKA V KA Input IK V KA Ioff R1 Iref IK Vref R2 Figure 3. Test Circuit for VKA = Vref Vref V ǒ1 ) R1 Ǔ ) Iref @ R1 R2 ref 60.0 Input IK, CATHODE CURRENT (mA) VKA = Vref TA = 25°C VKA IK 50.0 0.0 −50.0 −100.0 −1.0 Figure 5. Test Circuit for Ioff VKA = Vref TA = 25°C Input 40.0 VKA IMin IK 20.0 0.0 −20.0 −40.0 0.0 1.0 2.0 3.0 −60.0 −1.0 0.0 1.0 Figure 6. Cathode Current versus Cathode Voltage Figure 7. Cathode Current versus Cathode Voltage 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 −50 −25 2.0 VKA, CATHODE VOLTAGE (V) VKA, CATHODE VOLTAGE (V) IMIN, (mA) IK, CATHODE CURRENT (mA) +V Figure 4. Test Circuit for VKA > Vref 150.0 100.0 KA 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 8. Minimum Cathode Current Regulation versus Ambient Temperature www.onsemi.com 5 3.0 VKA = Vref IK = 1 mA VKA Input 2530 Iref, REFERENCE INPUT CURRENT (nA) 2540 IK 2520 Vref 2510 2500 2490 2480 2470 2460 −50 −25 0 25 50 75 100 125 Input 110 100 220k IK = 1 mA VKA IK Iref 90 80 70 60 50 40 −50 −25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 10. Reference Input Current versus Ambient temperature 0 Input VKA IK R1 −10 R2 Vref −20 −30 VKA = Vref IK = 1 mA −40 0 10 20 30 40 100 Input VKA = 36V V ref = 0V VKA Ioff 10 1 −50 −25 0 25 50 75 100 125 VKA, CATHODE VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Figure 11. Change in Reference Input Voltage versus Cathode Voltage Figure 12. Off−State Cathode Current versus Ambient Temperature 10 0.320 1.0k Output |ZKA|, DYNAMIC IMPEDANCE (W) |ZKA|, DYNAMIC IMPEDANCE (W) 120 Figure 9. Reference Input Voltage versus Ambient temperature Ioff, OFF−STATE CATHODE CURRENT (nA) DVref, REFERENCE INPUT VOLTAGE (mV) Vref, REFERENCE INPUT VOLTAGE (mV) NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series IK 50 GND 1 DIK = 1 mA to 100 mA TA = 25°C 0.1 0.001 0.01 0.1 1 f, FREQUENCY (MHz) 10 0.300 0.280 0.260 VKA = V ref DI K = 1.0 mA to 100mA f Vref [2.0 V ref Figure 31. Single−Supply Comparator with Temperature−Compensated Threshold ǓVref ǓVref Figure 30. Voltage Monitoring 150 mH @ 2.0 A Vin = 10 to 20 V TIP115 VOUT = 5.0 V IOUT = 1.0 A 1.0k 1N5823 4.7 k 4.7k 100k MPSA20 2200 mF 0.1 mF 470 mF 0.01 mF 4.7k 2.2k 51k 10 Figure 32. Step−Down Switching Converter www.onsemi.com 10 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series APPLICATIONS INFORMATION The NCP431/NCP432 is a programmable precision reference which is used in a variety of ways. It serves as a reference voltage in circuits where a non−standard reference voltage is needed. Other uses include feedback control for driving an optocoupler in power supplies, voltage monitor, constant current source, constant current sink and series pass regulator. In each of these applications, it is critical to maintain stability of the device at various operating currents and load capacitances. In some cases the circuit designer can estimate the stabilization capacitance from the stability boundary conditions curve provided in Figure 18. However, these typical curves only provide stability information at specific cathode voltages and at a specific load condition. Additional information is needed to determine the capacitance needed to optimize phase margin or allow for process variation. A simplified model of the NCP431/NCP432 is shown in Figure 33. When tested for stability boundaries, the load resistance is 150 W. The model reference input consists of an input transistor and a dc emitter resistance connected to the device anode. A dependent current source, Gm, develops a current whose amplitude is determined by the difference between the 1.78 V internal reference voltage source and the input transistor emitter voltage. A portion of Gm flows through compensation capacitance, CP2. The voltage across CP2 drives the output dependent current source, Go, which is connected across the device cathode and anode. Model component values are: Vref = 1.78 V Gm = 0.3 + 2.7 exp (−IC/26 mA) where IC is the device cathode current and Gm is in mhos Go = 1.25 (Vcp2) mmhos. Resistor and capacitor typical values are shown on the model. Process tolerances are ±20% for resistors, ±10% for capacitors, and ±40% for transconductances. An examination of the device model reveals the location of circuit poles and zeroes: P1 + P2 + Z1 + 1 1 + + 7.96 kHz 2pR GMC P1 2p @ 1.0M @ 20 pF 1 2pR P2C P2 + 1 2p @ 10M @ 0.265 pF + 60 kHz 1 1 + + 500 kHz 2pR Z1C P1 2p @ 15.9k @ 20 pF In addition, there is an external circuit pole defined by the load: PL + 1 2pR LC L Also, the transfer dc voltage gain of the NCP431 is: G + G MR GMGoR L Example 1: IC=10 mA, RL= 230 W,CL= 0. Define the transfer gain. The DC gain is: G + G MR GMGoR L + (2.138)(1.0M)(1.25m)(230) + 615 + 56 dB Loop gain + G 8.25k 8.25k ) 15k + 218 + 47 dB The resulting transfer function Bode plot is shown in Figure 34. The asymptotic plot may be expressed as the following equation: Av + 615 ǒ1 ) ǒ1 ) jf 8.0 kHz jf 500 kHz Ǔ Ǔǒ1 ) jf 60 kHz Ǔ The Bode plot shows a unity gain crossover frequency of approximately 600 kHz. The phase margin, calculated from the equation, would be 55.9°. This model matches the Open−Loop Bode Plot of Figure 15. The total loop would have a unity gain frequency of about 300 kHz with a phase margin of about 44°. Figure 33. Simplified NCP431/NCP432 Device Model www.onsemi.com 11 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series NCP431/NCP432 OPEN−LOOP VOLTAGE GAIN VERSUS FREQUENCY NCP431/NCP432 OPEN−LOOP BODE PLOT WITH LOAD CAP Figure 35. Example 2 Circuit Open Loop Gain Plot Figure 34. Example 1 Circuit Open Loop Gain Plot With three poles, this system is unstable. The only hope for stabilizing this circuit is to add a zero. However, that can only be done by adding a series resistance to the output capacitance, which will reduce its effectiveness as a noise filter. Therefore, practically, in reference voltage applications, the best solution appears to be to use a smaller value of capacitance in low noise applications or a very large value to provide noise filtering and a dominant pole rolloff of the system. Example 2. IC = 7.5 mA, RL = 2.2 kW, CL = 0.01 mF. Cathode tied to reference input pin. An examination of the data sheet stability boundary curve (Figure 18) shows that this value of load capacitance and cathode current is on the boundary. Define the transfer gain. The DC gain is: G + G MR GMGoR L + (2.138)(1.0M)(1.25m)(230) + 6389 + 76 dB The NCP431/NCP432 is often used as a regulator in secondary side of a switch mode power supply (SMPS). The benefit of this reference is high and stable gain under low bias currents. Figure 36 shows dependence of the gain (dynamic impedance) on the bias current. Value of minimum cathode current that is needed to assure stable gain is 80 mA maximum. The resulting open loop Bode plot is shown in Figure 35. The asymptotic plot may be expressed as the following equation: Av + 615 ǒ1 ) jf 8.0 kHz ǒ1 ) 500 kHz Ǔǒ1 ) 60 kHz jf jf Ǔ Ǔǒ1 ) jf 7.2 kHz Ǔ Note that the transfer function now has an extra pole formed by the load capacitance and load resistance. Note that the crossover frequency in this case is about 250 kHz, having a phase margin of about −46°. Therefore, instability of this circuit is likely. www.onsemi.com 12 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series Figure 37. SMPS Secondary Side and Feedback Connection on Primary Side Figure 36. Knee of Reference Regulator with TL431 or other references in secondary side of a SMPS needs bias resistor to increase cathode current to reach high and stable gain (refer to Figure 37). This bias resistor does not have to be used in regulator with NCP431/NCP432 thanks to its low minimum cathode current. The NCP431/NCP432 operates with very low leakage and reference input current. Sum of these currents is lower than 100 nA. Regulator with the NCP431/NCP432 minimizes parasitic power consumption. The best way to achieve extremely low no−load consumption in SMPS applications is to use NCP431/NCP432 as regulator on the secondary side. The consumption is reduced by minimum parasitic consumption and very low bias current of NCP431/NCP432. www.onsemi.com 13 NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series MARKING DIAGRAMS NCP43 1xxxx ALYW 8 1 N431xx ALYW G xxx MG G 1 xx, xxx, xxx = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year M = Date Code W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Operating Temperature Range Package Shipping† 1% SOIC−8 (Pb−Free) 2500 / Tape & Reel VRF 1% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP431BCSNT1G VRJ 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP432BCSNT1G VRM 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel ACLP 1% TO−92 (TO−226) (Pb−Free) 2000 / Tape & Reel NCP431AIDR2G AI 1% SOIC−8 (Pb−Free) 2500 / Tape & Reel NCP431AISNT1G VRG 1% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP431BISNT1G VRK 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP432BISNT1G VRN 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP431AILPRAG AILP 1% TO−92 (TO−226) (Pb−Free) 2000 / Tape & Reel NCP431AVDR2G AV 1% SOIC−8 (Pb−Free) 2500 / Tape & Reel NCP431AVSNT1G / SC431AVSNT1G* VRH 1% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP431AVLPRAG AVLP 1% TO−92 (TO−226) (Pb−Free) 2000 / Tape & Reel NCP431AVLPG AVLP 1% TO−92 (TO−226) (Pb−Free) 2000 Units / Bag NCP431BVSNT1G / SC431BVSNT1G* VRL 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel NCP432BVSNT1G / SC432BVSNT1G* VRP 0.5% SOT−23−3 (Pb−Free) 3000 / Tape & Reel Device Marking Tolerance NCP431ACDR2G AC NCP431ACSNT1G NCP431ACLPRAG 0°C to 70°C −40°C to 85°C −40°C to 125°C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SC Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D SCALE 1:1 12 3 STRAIGHT LEAD 1 DATE 05 MAR 2021 2 3 BENT LEAD STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. 2. 3. STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER VCC GROUND 2 OUTPUT STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXX A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 3 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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