SI4542DY

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. Si4542DY Si4542DY 30V Complementary PowerTrench MOSFET Features General Description • This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V Applications RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V • DC/DC converter • Power management DD2 DD2 D1 D DD1 G2 S2 G G1 S1 S S Drain-Source Voltage Gate-Source Voltage ID Drain Current 2 8 1 TA = 25°C unless otherwise noted Parameter VDSS VGSS 7 S Absolute Maximum Ratings - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Q1 Q2 Units 30 –30 ±20 6 20 ±20 –6 –20 V V A 2 1.6 1.2 1 –55 to +175 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 3 Q1 Pin 1 SO-8 PD 4 6 SO-8 Symbol Q2 5 Operating and Storage Junction Temperature Range W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4542 Si4542DY 13” 12mm 2500 units 2001 Semiconductor Components Industries, LLC. October-2017, Rev 1 Publication Order Number: Si4542DY/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = –24 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 –30 VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Temperature Coefficient ID = –250 µA, Referenced to 25°C Static Drain-Source VGS = 10 V, ID = 6 A On-Resistance VGS = 10 V, ID = 6 A, TJ = 125°C VGS = 4.5 V, ID = 5 A VGS = –10 V, ID = –6 A VGS = –10 V, ID = –6 A, TJ = 125°C VGS = –4.5 V, ID = –5 A On-State Drain Current VGS = 10 V, VDS = 5 V VGS = –10 V, VDS = –5 V Forward Transconductance VDS = 15 V, ID = 6 A VDS = –10 V, ID = –6 A Q1 Q2 Q1 Q2 Q1 1 –1 On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS V 23 –21 mV/°C 1 –1 +100 +100 µA 3 –3 V nA (Note 2) Gate Threshold Voltage Q2 Q1 Q2 Q1 Q2 1.5 –1.7 –4 4 19 32 25 21 29 30 mV/°C 28 48 35 32 51 45 20 –20 mΩ A 18 16 S 830 1540 185 400 80 170 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = –15 V, VGS = 0 V, f = 1.0 MHz Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) Gate-Drain Charge Q1 Q2 Q1 Q2 Q1 Q2 pF pF TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDS = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDS = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7.5 A, VGS = 5 V Q2 VDS = –10 V, ID = –6 A, VGS = –5V www.onsemi.com 2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 13 10 22 18 47 5 18 9 15 2.8 4 3.1 5 12 24 18 35 29 75 12 30 13 20 ns ns ns ns nC nC nC Si4542DY Electrical Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = –1.3 A (Note 2) Q1 Q2 Q1 Q2 0.7 –0.7 1.3 –1.3 1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when 2 mounted on a .02 in pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 3 c) 135°C/W when mounted on a minimum pad. Si4542DY Drain-Source Diode Characteristics and Maximum Ratings ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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