SMF05CT1G

SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G ESD Protection Diode Array, 5-Line This 5−line surge protection array is designed for application requiring transient voltage protection capability. It is intended for use in over−transient voltage and ESD sensitive equipment such as computers, printers, automotive electronics, networking communication and other applications. This device features a monolithic common anode design which protects five independent lines in a single SC−88 package. www.onsemi.com SC−88 FIVE SURGE PROTECTION 100 W PEAK POWER Features • Protects up to 5−Line in a Single SC−88 Package • Peak Power Dissipation − 100 W (8 x 20 ms Waveform) • ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model SC−88 CASE 419B STYLE 24 and Class C (Exceeding 400 V) per Machine Model. • Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact) • Flammability Rating of UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available* PIN ASSIGNMENT 1 6 2 5 3 4 Applications • • • • • Hand−Held Portable Applications Networking and Telecom Automotive Electronics Serial and Parallel Ports Notebooks, Desktops, Servers Rating PPK 1 Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) TJ TSTG CATHODE ANODE CATHODE CATHODE CATHODE CATHODE MARKING DIAGRAM 6 XX MG G MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol PIN 1. 2. 3. 4. 5. 6. 1 Value Unit W 100 Operating Junction Temperature Range −40 to 125 °C Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C ESD Human Body Model (HBM) Machine Model (MM) IEC 61000−4−2 Air (ESD) IEC 61000−4−2 Contact (ESD) 16000 400 15000 15000 V XX = Specific Device Code 6J = SMF05C 6K = SZSMF12C/SMF12C 6L = SMF15C 6M = SMF24C M = Date Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 3. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2017 − Rev. 5 1 Publication Order Number: SMF05C/D SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G SMF05CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min Typ (Note 2) IT = 1 mA, (Note 3) 6.2 0.07 Max Unit 5.0 V 7.2 V 5.0 mA Reverse Leakage Current IR VRWM = 5 V Clamping Voltage VC IPP = 5 A (8 x 20 ms Waveform) 9.8 V Clamping Voltage VC IPP = 8 A (8 x 20 ms Waveform) 12.5 V Maximum Peak Pulse Current IPP 8 x 20 ms Waveform Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 8.0 A 80 130 pF Typ Max Unit 12 V 15 V SMF12CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1 mA, (Note 3) 13.3 Reverse Leakage Current IR VRWM = 12 V 0.1 mA Clamping Voltage VC IPP = 3 A (8 x 20 ms Waveform) 0.01 21 V Clamping Voltage VC IPP = 6 A (8 x 20 ms Waveform) 23 V Maximum Peak Pulse Current IPP 8 x 20 ms Waveform 6.0 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 40 60 pF Typ Max Unit 15 V 19 V 1.0 mA SMF15CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1 mA, (Note 3) 17 Reverse Leakage Current IR VRWM = 15 V 0.01 Clamping Voltage VC IPP = 1 A (8 x 20 ms Waveform) 23 V Clamping Voltage VC IPP = 5 A (8 x 20 ms Waveform) 29 V Maximum Peak Pulse Current IPP 8 x 20 ms Waveform Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 5.0 A 33 45 pF Typ Max Unit 24 V 32 V SMF24CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1 mA, (Note 3) 26.7 Reverse Leakage Current IR VRWM = 24 V 1.0 mA Clamping Voltage VC IPP = 1 A (8 x 20 ms Waveform) 0.01 40 V Clamping Voltage VC IPP = 2.5 A (8 x 20 ms Waveform) 44 V Maximum Peak Pulse Current IPP 8 x 20 ms Waveform 2.5 A Capacitance CJ VR = 0 V, f = 1 MHz (Line to GND) 25 pF 21 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Include SZ-prefix devices where applicable. www.onsemi.com 2 SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G TYPICAL PERFORMANCE CURVES 100 100 90 90 % OF PEAK PULSE CURRENT PEAK POWER DISSIPATION (%) (TJ = 25°C unless otherwise specified) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 200 0 20 Figure 1. Pulse Derating Curve 100 SMF24CT1G SMF15CT1G SMF12CT1G SMF05CT1G 10 0 5 10 JUNCTION CAPACITANCE (pF) VCLAMP, CLAMPING VOLTAGE (V) 80 60 Figure 2. 8 × 20 ms Pulse Waveform 100 1 40 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C) SMF05CT1G 10 1 15 SMF12CT1G SMF15CT1G SMF24CT1G 0 IPP, PEAK PULSE CURRENT (A) 5 10 15 20 25 VBR, REVERSE VOLTAGE (V) Figure 3. Clamping Voltage vs Peak Pulse Current Figure 4. Junction Capacitance vs Reverse Voltage ORDERING INFORMATION Package Shipping† SMF05CT1G SC−88 (Pb−Free) 3,000 / Tape & Reel SMF05CT2G* SC−88 (Pb−Free) 3,000 / Tape & Reel SMF12CT1G SC−88 (Pb−Free) 3,000 / Tape & Reel SMF15CT1G SC−88 (Pb−Free) 3,000 / Tape & Reel SMF24CT1G SC−88 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The “T2” suffix refers to an alternate tape & reel orientation. www.onsemi.com 3 SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. 4 HE −E− 1 2 DIM A A1 A3 b C D E e L HE 3 b 6 PL 0.2 (0.008) M E M A3 C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 4 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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