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TIP29ATU

TIP29ATU

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT78

  • 描述:

    TRANS NPN 60V 1A TO-220

  • 数据手册
  • 价格&库存
TIP29ATU 数据手册
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG Symbol Value VCEO Unit Vdc 40 60 80 100 Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Emitter − Base Voltage VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc Base Current IB 0.4 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 30 0.24 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy (Note 1) E 32 mJ TJ, Tstg – 65 to + 150 °C Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range www.onsemi.com 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS Vdc 40 60 80 100 PNP NPN COLLECTOR 2,4 COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz TIPxxxG AYWW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Thermal Resistance, Junction−to−Case RqJC 4.167 °C/W TIPxxx A Y WW G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 13 1 3 EMITTER = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO(sus) Vdc 40 60 80 100 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP29G, TIP29AG, TIP30G, TIP30AG (VCE = 60 Vdc, IB = 0) TIP29BG, TIP29CG, TIP30BG, TIP30CG ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP29G, TIP30G (VCE = 60 Vdc, VEB = 0) TIP29AG, TIP30AG (VCE = 80 Vdc, VEB = 0) TIP29BG, TIP30BG (VCE = 100 Vdc, VEB = 0) TIP29CG, TIP30CG ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − − − mAdc − 0.3 − 0.3 mAdc − 200 − 200 − 200 − 200 − 1.0 40 15 − 75 − 0.7 − 1.3 3.0 − 20 − mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% 3. fT = ⎪hfe⎪• ftest www.onsemi.com 2 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 3.0 2.0 500 TJ = 150°C VCE = 2.0 V 25°C 100 70 50 -55°C 30 10 7.0 5.0 0.03 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ t, TIME (s) μ hFE, DC CURRENT GAIN 300 1.0 0.7 0.5 0.3 0.2 tf @ VCC = 30 V tf @ VCC = 10 V 0.1 0.07 0.05 0.5 0.7 1.0 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 0.03 0.03 3.0 0.2 0.3 0.5 0.7 1.0 VEB(off) VCC 2.0 RC SCOPE Vin 0.7 0.5 RB APPROX +11 V Cjd
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