2SB0642

Transistors 2SB0642 (2SB642) Silicon PNP epitaxial planar type For low-power general amplification 6.9±0.1 (0.4) Unit: mm 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 ■ Features • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.5) (1.5) R 0.9 R 0.7 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −50 −7 −100 −200 400 150 −55 to +150 Unit V V V mA mA mW °C °C 3 1.0±0.1 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 2 (2.5) 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common-emitter reverse transfer) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 2 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 80 3.5 160 Min −60 −50 −7 −1 −1 460 −1 Typ Max Unit V V V µA µA  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 160 to 260 R 210 to 340 S 290 to 460 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00045BED 4.1±0.2 4.5±0.1 1 2SB0642 PC  Ta 500 IC  VCE −60 IB = −300 µA −250 µA −40 −200 µA −150 µA −100 µA −50 µA Ta = 25°C IC  I B −60 VCE = −5 V Ta = 25°C Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) −20 400 −50 −50 −40 300 −30 −30 200 −20 −20 100 −10 −10 0 0 20 40 60 80 100 120 140 160 0 0 −4 −8 −12 −16 0 0 −150 −300 −450 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (µA) IB  VBE −400 −350 −300 −250 −200 −150 −100 −50 0 − 0.6 − 1.2 −1.8 VCE = −5 V Ta = 25°C −240 IC  VBE VCE = −5 V 25°C Ta = 75°C −25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −10 IC / IB = 10 −200 Collector current IC (mA) Base current IB (µA) −1 −160 Ta = 75°C 25°C −25°C −120 − 0.1 −80 − 0.01 −40 0 0 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 − 0.001 −1 −10 −100 −1 000 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE  IC 600 VCE = −10 V 160 140 VCB = −10 V Ta = 25°C fT  I E Collector output capacitance C (pF) (Common base, input open circuited) ob 8 7 6 5 4 3 2 1 0 −1 Cob  VCB IE = 0 f = 1 MHz Ta = 25°C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 120 100 80 60 40 20 400 Ta = 75°C 25°C −25°C 300 200 100 0 −1 −10 −100 −1 000 0 0.1 1 10 100 −10 −100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJC00045BED 2SB0642 Cre  VCE Common emitter reverse transfer capacitance Cre (pF) 6 IC = −1 mA f = 10.7 MHz Ta = 25°C NF  IE 6 VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 20 VCB = −5 V R = 50 kΩ 18 g Ta = 25°C 16 NF  IE 5 5 Noise figure NF (dB) Noise figure NF (dB) 4 4 14 12 10 8 6 4 2 10 kHz f = 100 Hz 1 kHz 3 3 2 2 1 1 0 0 −5 −10 −15 −20 −25 −30 0 0.01 0.1 1 10 0 0.1 1 10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) h Parameter  IE VCE = −5 V f = 270 Hz Ta = 25°C h Parameter  VCE 100 ICBO  Ta VCB = −10 V hfe 100 hfe 100 hoe (µS) ICBO (Ta) ICBO (Ta = 25°C) −100 h Parameter h Parameter 10 hoe (µS) 10 10 hie (kΩ) hre (× 10−4) hie (kΩ) IE = 2 mA f = 270 Hz Ta = 25°C 1 0 25 50 75 100 125 150 1 0.1 hre (× 10−4) 1 10 1 −1 −10 Emitter current IE (mA) Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) SJC00045BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL