Transistor
2SC3938
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
2.1±0.1
s Features
q q q
0.425
1.25±0.1
0.425
q
High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Allowing pair use with 2SA1739.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
0.9±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 300 100 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–70 S–Mini Type Package
Marking symbol : 2Y
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
*h
(Ta=25˚C)
Symbol ICBO IEBO hFE* VCE(sat) VBE(sat) fT Cob ton toff tstg Refer to the measurment circuit Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit µA µA
FE
Rank classification
Rank hFE Marking Symbol Q 60 ~ 120 2YQ R 90 ~ 200 2YR
0.15–0.05
+0.1
0.3–0
+0.1
1
Transistor
Switching time measurement circuit ton, toff Test Circuit
0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb= –3V 50Ω Vin=10V VCC=3V 50Ω A 910Ω 90Ω
2SC3938
PC — Ta tstg Test Circuit
0.1µF 1kΩ Vout
240
Collector power dissipation PC (mW)
200
0.1µF 500Ω 500Ω Vbb=2V
160
VCC=10V
120
80
Vin Vout
10% 90%
Vin Vout
10% 90%
0 Vin
10% 10% tstg (Waveform at A)
40
Vout ton toff
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
120 Ta=25˚C 100 100 30 10 3 1
VCE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 1 0.3 0.3 0.03 0.01 0.3 1 3 10 30 100 1 3
VBE(sat) — IC
Collector current IC (mA)
IB=3.0mA 2.5mA 2.0mA 1.5mA
80
60 1.0mA 40 0.5mA 20
Ta=75˚C 0.3 0.3 0.03 0.01 0.1 25˚C –25˚C
Ta=–25˚C 25˚C 75˚C
0 0 0.2 0.4 0.6 0.8 1.0 1.2
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
hFE — IC
600 VCE=1V 600
fT — I E
6
Cob — VCB
Collector output capacitance Cob (pF)
VCE=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C
Forward current transfer ratio hFE
500
Transition frequency fT (MHz)
500
5
400
400
4
300
300
3
200
Ta=75˚C 25˚C –25˚C
200
2
100
100
1
0 0.1
0.3
1
3
10
30
100
0 –1
0 –3 –10 –30 –100 –300 –1000 1 3 10 30 100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
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