2SC3942

Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High collector to emitter VCEO Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 (TC=25˚C) Ratings 300 300 7 200 100 10 2.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C) Symbol ICEO VCBO VCEO VEBO hFE VBE VCE(sat) fT Cob Conditions VCE = 200V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 50V, IC = 5mA VCE = 10V, IC = 30mA IC = 30mA, IB = 3mA VCE = 30V, IC = 20mA, f = 10MHz VCB = 30V, IE = 0, f = 1MHz 70 140 2.7 300 300 7 50 250 1.2 1.5 V V MHz pF min typ max 10 Unit µA V V V 1 Power Transistors PC — Ta 20 TC=Ta 120 TC=25˚C 100 IB=2.0mA 1.6mA 1.2mA 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 20 200 25˚C TC=100˚C 160 2SC3942 IC — VCE 240 VCE=10V IC — VBE Collector power dissipation PC (W) 18 Collector current IC (mA) 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 80 Collector current IC (mA) 16 –25˚C 120 80 40 0 0 10 20 30 40 50 60 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 1000 3 I /I =10 CB hFE — IC VCE=50V 240 220 fT — IE VCB=30V f=10MHz TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) 100 300 25˚C TC=100˚C 200 180 160 140 120 100 80 60 40 20 1 100 –25˚C 30 0.3 0.1 TC=100˚C 25˚C –25˚C 10 0.03 3 0.01 1 3 10 30 100 1 1 3 10 30 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 1.0 Area of safe operation (ASO) 1000 IE=0 f=1MHz TC=25˚C 300 ICP Single pulse TC=25˚C t=2ms IC DC Collector output capacitance Cob (pF) Collector current IC (A) 1 3 10 30 100 300 1000 0.8 100 30 10 3 1 0.3 0.6 0.4 0.2 0 0.1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2