2SC3971

Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 6 3 1.5 30 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to 2SC3971 2SC3971A 2SC3971 Symbol VCBO VCES VCEO VEBO ICP IC IB emitter voltage 2SC3971A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V V A A A W ˚C ˚C Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3971 2SC3971A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1.2A IC = 1.2A, IB = 0.24A IC = 1.2A, IB = 0.24A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.2A, IB1 = 0.24A, IB2 = – 0.48A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA V 1 Power Transistors PC — Ta 40 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 5 2SC3971, 2SC3971A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat) — IC Collector power dissipation PC (W) 30 Collector current IC (A) (1) 4 20 3 IB=400mA 2 300mA 200mA 100mA 1 50mA 20mA 0 TC=100˚C 25˚C –25˚C 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 1 3 10 30 10 100 TC=100˚C 10 3 30 3 1 TC=–25˚C 100˚C 25˚C 10 25˚C –25˚C 1 0.3 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 Area of safe operation (ASO) 10 IE=0 f=1MHz TC=25˚C 3 ICP IC 10ms DC t=0.5ms 1ms ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 10 3 tstg 1 ton 0.3 0.1 0.03 0.01 tf 100 30 10 3 Non repetitive pulse TC=25˚C 1 3 10 30 100 300 1000 1 1 3 10 30 100 0.001 0 1 2 3 4 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Collector current IC (A) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=180µH IC/IB=5 (IB1=–IB2) TC