Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
Unit : mm
For switching
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
• Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
45˚
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0+0.25 –0.20
0.4±0.04
s Absolute Maximum Ratings Ta = 25°C
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
3
2
1
Symbol VDS VGSO ID IPD PD Pch Tstg
Ratings 30 ±20 ±1 ±2 1 150 −55 to +150
Unit V V A A W °C °C
marking
1: Gate 2: Drain 3: Source Mini-Power Type Package (3-pin)
Marking Symbol: 2M Internal Connection
D G
Note) * PC board: Copper foil of the drain portion should have a area of 1 cm2 or more and the board thickness should be 1.7 mm.
S
s Electrical Characteristics Ta = 25°C
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate to Source voltage Gate threshold voltage Drain to Source ON-resistance * Symbol IDSS IGSS VDSS VGSS Vth RDS(ON)1 RDS(ON)2 Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Note) *: Pulse measurement Yfs Ciss Coss Crss tON tf tOFF VGS = 10 V, ID = 0.5 A, VDD = 10 V RL = 10 Ω Conditions VDS = 25 V, VGS = 0 VGS = ±15 V, VDS = 0 ID = 0.1 mA, VGS = 0 IGS = 0.1 mA, VDS = 0 VDS = 5 V, ID = 1 mA VGS = 4 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A VDS = 10 V, VGS = 0, f = 1 MHz 0.5 87 69 23 12 160 60 30 ±20 0.8 0.48 0.35 2 0.75 0.6 Min Typ Max 10 ±10 Unit µA µA V V V Ω Ω S pF pF pF ns ns ns
2.5±0.1
s Features
0.4 max.
1
2SK2211
ID VDS
3.0 Ta = 25°C 2.5 2.5 3.0
Silicon MOS FETs (Small Signal)
ID VDS
1.6
RDS VDS
Drain to source ON-resistance RDS(ON) (Ω)
VDS =10 V Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID = 0.5 A Ta = 25°C
Drain current ID (A)
2.0
Drain current ID (A)
VGS = 3.5 V
2.0
1.5 3.0 V 1.0 2.5 V 0.5 2.0 V 0 0 2 4 6 8 10 12
1.5
1.0
0.5
0 0 1 2 3 4 5 6
0
2
4
6
8
10
12
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
RDS ID
1.4 1.6 Ta = 25°C
Yfs ID
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
140 120 100 80
Ciss, Coss, Crss VDS
f = 1 MHz Ta = 25°C
Drain to source ON-resistance RDS(ON) (Ω)
Forward transfer admittance |Yfs| (S)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 VGS = 4 V 10 V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5
VDS = 10 V f = 1 kHz Ta = 25°C
Ciss 60 Coss 40 20 Crss 0 0.3 1 3 10 30 100 300
2.0
2.5
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
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