NP043A2

Composite Transistors NP043A2 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits ■ Features • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02 1 2 1.00±0.05 3 (0.35) (0.35) ■ Basic Part Number • UNR31A2 + UNR32A2 Display at No.1 lead 0.10 0.10 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 80 −50 −50 −80 125 125 −55 to +125 Unit V V mA V V mA mW °C °C Tr1 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0.37+0.03 -0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 7T Internal Connection 6 R1 22 kΩ 5 R2 22 kΩ 4 R2 22 kΩ R1 22 kΩ Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −1 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 1 2 3 Min 50 50 Typ Max Unit V V µA µA mA  0.1 0.5 0.2 60 0.25 4.9 0.2 −30% 0.8 22 1.0 150 +30% 1.2 V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: April 2004 SJJ00285AED (0.10) 1 NP043A2 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = −10 V, IE = 1 mA, f = 200 MHz Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 VCE = −10 V, IC = −5 mA IC = −10 mA, IB = − 0.3 mA VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −2.5 V, RL = 1 kΩ −30% 0.8 22 1.0 80 −4.9 − 0.2 +30% 1.2 60 − 0.25 Min −50 −50 − 0.1 − 0.5 − 0.2 Typ Max Unit V V µA µA mA  V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 140 Total power dissipation PT (mW) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) Characteristics charts of Tr1 IC  VCE 70 0.8 mA 0.7 mA 0.6 mA 0.5 mA IB = 1.0 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC/IB = 10 hFE  IC 300 VCE = 10 V Ta = 85°C 25°C 70 0.9 mA 60 50 40 30 20 10 Ta = 25°C 0 0 2 4 6 8 10 12 0.1 mA 0.4 mA 0.3 mA 0.2 mA 1 Forward current transfer ratio hFE 250 Collector current IC (mA) 200 150 0.1 Ta = 85°C −25°C 25°C 100 −25°C 50 0.01 1 10 100 0 0.1 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJJ00285AED NP043A2 Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C IO  VIN 100 VO = 5 V Ta = 25°C 10 VO = 0.2 V Ta = 25°C VIN  IO Output current IO (mA) 10 1 Input voltage VIN (V) 1 1 0.1 0 5 10 15 20 25 30 35 40 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of Tr2 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −70 Ta = 25°C −60 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 IB = −1.0 mA VCE(sat)  IC −10 IC/IB = 10 250 VCE = −10 V hFE  IC Ta = 85°C Forward current transfer ratio hFE 200 25°C 150 −25°C Collector current IC (mA) −50 −40 −30 −20 −10 −1 Ta = 85°C − 0.1 25°C −25°C 100 50 − 0.01 −1 −10 0 −1 −10 −100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C IO  VIN −100 Ta = 25°C VIN  IO −100 VO = − 0.2 V Ta = 25°C Output current IO (mA) −10 Input voltage VIN (V) −2 −4 −6 −8 −10 1 −10 −1 0.1 0 5 10 15 20 25 30 35 40 − 0.1 0 −1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00285AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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