UP04601

Composite Transistors UP04601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification 6 (0.30) 5 4 1.20±0.05 1.60±0.05 0.20+0.05 –0.02 Unit: mm 0.10±0.02 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 −60 −50 −7 −100 −200 125 125 −55 to +125 Unit V V V mA mA V Tr1 Tr2 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5C Internal Connection 6 5 4 V V mA mA mW °C °C 1 2 3 0.10 max. • 2SD0601A + 2SB0709A 5˚ 0.55±0.05 ■ Basic Part Number Display at No.1 lead (0.20) • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5˚ (0.20) ■ Features Publication date: December 2003 SJJ00233BED 1 UP04601 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = − 2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 180 0.1 150 3.5 Min 60 50 7 0.1 100 390 0.3 Typ Max Unit V V V µA µA  V MHz pF • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VCE = −10 V, IC = −5 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 180 − 0.3 80 2.7 Min −60 −50 −7 − 0.1 −100 390 − 0.5 Typ Max Unit V V V µA µA  V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00233BED UP04601 Characteristics charts of Tr1 IC  VCE 50 Ta = 25°C IB = 160 µA 140 µA 160 VCE = 10 V Ta = 25°C IC  I B 10 VCE = 10 V Ta = 25°C IB  VBE Collector current IC (mA) 40 8 Collector current IC (mA) 30 100 µA 80 µA Base current IB (mA) 0.4 120 µA 120 6 80 20 60 µA 40 µA 4 40 10 20 µA 0 0 2 0 4 8 12 0 0.8 1.2 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC  VBE VCE = 10 V 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 400 hFE  IC VCE = 10 V Ta = 75°C 25°C 240 −25°C 160 120 Forward current transfer ratio hFE 100 320 Collector current IC (mA) 1 80 Ta = 75°C −25°C 60 10−1 25°C Ta = 75°C −25°C 40 10−2 20 80 0 0 0.2 0.4 0.6 0.8 1.0 10−3 1 10 102 103 0 1 10 102 103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C 1 0 10 20 30 40 Collector-base voltage VCB (V) SJJ00233BED 3 UP04601 Characteristics charts of Tr2 IC  VCE −120 Ta = 25°C IC  I B −160 VCE = −10 V Ta = 25°C IB  VBE −4 VCE = −10 V Ta = 25°C −100 Collector current IC (mA) −80 −250 µA −200 µA −150 µA −60 −80 Base current IB (mA) − 0.4 − 0.8 −1.2 IB = −300 µA Collector current IC (mA) −120 −3 −2 −40 −100 µA −50 µA −40 −1 −20 0 0 −4 −8 −12 0 0 0 0 − 0.2 − 0.4 − 0.6 − 0.8 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC  VBE VCE = −10 V 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −10 IC / IB = 10 600 hFE  IC VCE = −10 V −120 −1 Ta = 75°C 25°C −1 Forward current transfer ratio hFE −100 500 Ta = 75°C 400 25°C −25°C Collector current IC (mA) −80 Ta = 75°C −25°C −60 −10 300 −25°C −40 200 −10−2 −20 100 0 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −10−3 −1 −10 −102 −103 0 −10−1 −1 −10 −102 −103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C 1 0 −10 −20 −30 −40 Collector-base voltage VCB (V) 4 SJJ00233BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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