PSMP075N15NS1_T0_00601

PSMP075N15NS1 150V N-Channel MOSFET Voltage 150 V Rdson 7.5 mΩ Current 125 A Qg 97 nC TO-220AB-L Feature:  RDS(ON) Max, VGS@10V: 7.5mΩ  RDS(ON) Max, VGS@7V: 9mΩ  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0739 ounces, 2.0948 grams Application  BMS, BLDC. SMPS SR. Absolute Maximum Ratings (TA = 25 oC unless otherwise specified) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS 150 Gate-Source Voltage VGS ±20 TC=25oC Continuous Drain Current(Note 3) TC=100oC TC=25oC Pulsed Drain Current Single Pulse Avalanche Current (Note 5) Single Pulse Avalanche Energy (Note 5) Power Dissipation TC =25oC TC =100oC ID 125 88.5 UNITS V A IDM 350 A IAS 36 A EAS 655 mJ PD 258.6 129 W TJ,TSTG -55~175 oC SYMBOL MAXIMUM UNITS Junction-to-Case RθJC 0.58 oC/W Junction-to-Ambient (Note 3) RθJA 62.5 oC/W Operating Junction and Storage Temperature Range Thermal Characteristics PARAMETER Thermal Resistance April 6,2022 PSMP075N15NS1-REV.00 Page 1 PSMP075N15NS1 Electrical Characteristics (TA = 25 oC unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 150 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3.2 4 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=50A - 6.3 7.5 (Note 1) RDS(on) VGS=7V, ID=25A 6.8 9 V mΩ Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V - - 1 uA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA - 72 - - 97 - - 31 - - 23 - - 6511 - - 862 - - 83 - - 53 - - 111 - - 99 - - 113 - Dynamic (Note 6) Total Gate Charge Qg Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VDS=75V, ID=50A, VGS=7V VDS=75V, ID=50A, VGS=10V VDS=75V, VGS=0V, F=1MHz VDD=75V, ID=50A, VGS=10V, RG=2Ω (Note 2) tf nC pF ns Rg f=1.0MHz - 2.7 - Ω Diode Forward Voltage VSD IS=50A, VGS=0V - 0.9 1.3 V Reverse Recovery Charge Qrr IS=50A - 541 - nC Reverse Recovery Time Trr di/dt=100A/μs - 117 - ns Gate Resistance Drain-Source Diode NOTES : 1. Pulse width