BGD702

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). PINNING - SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output BGD702 DESCRIPTION handbook, halfpage 1 2 3 8 579 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 750 MHz VB = 24 V MIN. 18 18.5 − − 435 MAX. 19 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 65 +100 +100 UNIT dBmV °C °C 2001 Nov 27 2 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 750 MHz SL FL s11 f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz s21 CTB Xmod CSO d2 Vo NF phase response composite triple beat cross modulation f = 50 MHz MIN. 18 18.5 0.2 − 20 19 18 17 16 20 19 18 17 16 −45 TYP. 18.5 19.7 1.3 ±0.2 27 30 29 22 21 23 24 23 21 21 − −59 −64 −63 −78 64 4.5 − − − 6.5 425 BGD702 SYMBOL Gp MAX. 19 − 2 ±0.5 − − − − − − − − − − +45 −58 −62 −58 −68 − 5.5 6.5 6.5 7 8.5 435 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB dB dB dB dB mA 110 channels flat; Vo = 44 dBmV; − measured at 745.25 MHz 110 channels flat; Vo = 44 dBmV; − measured at 55.25 MHz composite second order distortion 110 channels flat; Vo = 44 dBmV; − measured at 746.5 MHz second order distortion output voltage noise figure note 1 dim = −60 dB; note 2 f = 50 MHz f = 450 MHz f = 550 MHz f = 600 MHz f = 750 MHz − 61 − − − − − − Itot Notes total current consumption (DC) note 3 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V. 2001 Nov 27 3 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 600 MHz SL FL s11 f = 40 to 600 MHz f = 40 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz s21 CTB Xmod CSO d2 Vo NF Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo −6 dB; fr = 599.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 588.25 MHz. phase response composite triple beat cross modulation f = 50 MHz 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz MIN. 18 18.5 0.2 − 20 19 18 17 20 19 18 17 −45 − − − − 64 − − TYP. 18.5 19.4 − − 27 30 29 22 23 24 23 21 − −66 −66 −68 −80 67 − 425 BGD702 SYMBOL Gp MAX. 19 − 2 ±0.3 − − − − − − − − +45 −65 −65 −60 −70 − − 435 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA composite second order distortion 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz second order distortion output voltage noise figure total current consumption (DC) note 1 dim = −60 dB; note 2 see Table 1 note 3 3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V. 2001 Nov 27 4 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 550 MHz SL FL s11 f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz s21 CTB Xmod CSO d2 Vo NF Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. phase response composite triple beat cross modulation f = 50 MHz 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz MIN. 18 18.5 0.2 − 20 19 18 17 20 19 18 17 −45 − − − − 64.5 − − TYP. 18.5 19.3 − − 27 30 29 22 23 24 23 21 − −68 −68 −68 −81 68 − 425 BGD702 SYMBOL Gp MAX. 19 − 2 ±0.3 − − − − − − − − +45 −67 −67 −62 −72 − − 435 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA composite second order distortion 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz second order distortion output voltage noise figure total current consumption (DC) note 1 dim = −60 dB; note 2 see Table 1 note 3 3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V. 2001 Nov 27 5 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier Table 4 Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 450 MHz SL FL s11 f = 40 to 450 MHz f = 40 to 450 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 450 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 450 MHz s21 CTB Xmod CSO d2 Vo NF Itot Notes 1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz. 2. Measured according to DIN45004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo −6 dB; fr = 449.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 438.25 MHz. phase response composite triple beat cross modulation f = 50 MHz 60 channels flat; Vo = 46 dBmV; measured at 445.25 MHz 60 channels flat; Vo = 46 dBmV; measured at 55.25 MHz MIN. 18 18.5 0.2 − 20 19 18 17 20 19 18 17 −45 − − − − 67 − − TYP. 18.5 19.2 − − 27 30 29 22 23 24 23 21 − − − − − − − 425 BGD702 SYMBOL Gp MAX. 19 − 2 ±0.3 − − − − − − − − +45 −68 −65 −65 −75 − − 435 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA composite second order distortion 60 channels flat; Vo = 46 dBmV measured at 446.5 MHz second order distortion output voltage noise figure total current consumption (DC) note 1 dim = −60 dB; note 2 see Table 1 note 3 3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V. 2001 Nov 27 6 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads BGD702 SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-06 2001 Nov 27 7 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BGD702 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 Nov 27 8 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier NOTES BGD702 2001 Nov 27 9 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier NOTES BGD702 2001 Nov 27 10 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier NOTES BGD702 2001 Nov 27 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/07/pp12 Date of release: 2001 Nov 27 Document order number: 9397 750 09068