2SC2620QBTL-E

2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 (Previous ADE-208-1071) Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 2SC2620 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SC2620 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Min 30 20 4 — — 60 — — — — Typ — — — — — — 0.17 0.72 940 0.9 Max — — — 0.5 0.5 200 — — — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 mA IC = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 page 2 of 7 2SC2620 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics 20 Collector Power Dissipation Pc (mW) 150 Collector Current IC (mA) 16 12 8 100 300 275 250 225 200 175 150 125 100 P 75 50 4 C =1 50 00 mW 25 µA IB = 0 0 50 100 150 0 4 8 12 16 20 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 120 VCE = 6 V 100 80 60 40 20 0 0.1 Typical Output Characteristics 5 4 3 2 1 40 30 20 10µA IB = 0 0 4 8 12 16 20 DC Current Transfer ratio hFE 50 Collector Current IC (mA) 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Transfer Cahracteristics (1) 20 5 Typical Transfer Cahracteristics (2) Collector Current IC (mA) 16 Collector Current IC (mA) VCE = 6 V VCE = 6 V 4 12 3 8 2 4 1 0 0.6 0.7 0.8 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) Rev.2.00 Aug 10, 2005 page 3 of 7 2SC2620 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 1.5 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 1.3 f = 1 MHz IE = 0 1,000 800 600 400 200 0 0.1 VCE = 6 V 1.1 0.9 0.7 0.5 0.3 1.0 3 10 30 0.2 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) Collector Current IC (mA) Noise Figure vs. Collector Current 8 IC = 1 mA f = 100 MHz Rg = 50 Ω 8 Noise Figure vs. Signal Source Resistance VCE = 6 V IC = 1 mA f = 100 MHz 6 Noise figure NF (dB) 6 4 Noise figure NF (dB) 1.0 2 5 10 4 2 2 0 0.2 0.5 0 20 50 100 200 500 1,000 Collector Current IC (mA) Noise Figure vs. Collector to Emitter Voltage 8 VCE = 6 V f = 100 MHz Rg = 50 Ω Signal Source Resistance Rg (Ω) 100 MHz Power Gain Test Circuit Noise figure NF (dB) 6 IN f = 100 MHz Rg = 100 Ω 300 p D.U.T. 10 p max 0.1 µ OUT Rl = 550 Ω 3k 4 500 0.01 µ 0.01 µ 2 VEE 0.01 µ VCC Unit R : Ω C:F 0 1 2 5 10 20 Collecter to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 4 of 7 2SC2620 Reverse Transfer Admittance Characteristics Reverse Transfer Conductance gre (mS) yre = gre + jbre VCE = 6 V Input Admittance Characteristics 18 yie = gie + jbie VCE = 6 V Input Suceptance bie (mS) 16 14 12 f = 50 MHz 70 –0.2 –0.4 –0.6 10 f = 200 MHz 8 150 70 50 MHz 5 mA 150 100 200 100 150 200 IC = 5 mA 3 2 1 6 100 70 3 mA 4 2 mA 2 50 IC = 1 mA 0 2 4 –0.8 –1.0 6 8 10 12 14 16 18 Input Conductance gie (mS) Forward Transfer Admittance Characteristics Forward Transfer Conductance gfe (mS) Output Admittance Characteristics 2.4 yoe = goe + jboe VCE = 6 V IC = 1 mA 2 3 5 f = 200 MHz 1.2 0.8 0.4 100 70 50 0.1 0.2 0.3 0.4 0.5 0.6 150 Forward Transfer Suceptance bfe (mS) 0 20 40 60 80 100 120 –20 –40 –60 –80 –100 –120 Output Suceptance boe (mS) yfe = gfe + jbfe VCE = 6 V IC = 1 mA 2 mA f = 50 MHz 3 mA 70 5 mA 200 150 100 2.0 1.6 0 Output Conductance goe (mS) Input Admittance vs. Collector to Emitter Voltage 10 Input Admittance vs. Collector Current 20 Input Admittance yie (mS) bie 5 yie = gie + jbie IC = 1 mA f = 100 MHz gie 1.0 Input Admittance yie (mS) 10 5 yie = gie + jbie VCE = 6 V f = 100 MHz bie 2 2 1.0 0.5 0.2 0.1 gie 0.5 1 2 5 10 20 0.2 0.5 1.0 2 5 10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 7 Reverse Transfer Suceptance bre (mS) –0.20 –0.16 –0.12 –0.08 –0.04 0 2SC2620 Reverse Transfer Admittance vs. Collector to Emitter Voltage Reverse Transfer Suceptance bre (mS) Reverse Transfer Suceptance bre (mS) Reverse Transfer Conductance gre (mS) –1.0 –0.1 –1.0 –0.5 –0.2 –0.1 –0.05 yre = gre + jbre VCE = 6 V f = 100 MHz bre Reverse Transrer Admittance vs. Collector Current –0.1 –0.05 –0.02 gre –0.01 –0.005 –5 yre = gre + jbre IC = 1 mA f = 100 MHz bre –0.05 –0.2 –0.02 –0.1 gre –0.01 –0.02 –0.01 0.1 –0.002 –0.001 0.2 0.5 1.0 2 5 10 –0.05 1 2 5 10 20 –0.005 Collector to Emitter Voltage VCE (V) Forward Transfer Admittance vs. Collector to Emitter Voltage Forward Transfer Admittance yie (mS) 100 yfe = gfe + jbfe IC = 1 mA f = 100 MHz gfe Collector Current IC (mA) Forward Transrer Admittance vs. Collector Current Forward Transrer Admittance yie (mS) 100 50 20 10 5 yfe = gfe + jbfe VCE = 6 V f = 100 MHz 50 gfe –bfe 20 –bfe 10 2 1 0.1 5 1 2 5 10 20 0.2 0.5 1.0 2 5 10 Collector to Emitter Voltage VCE (V) Output Admittance vs. Collector to Emitter Voltage 2.0 0.2 Collector Current IC (mA) Output Admittance vs. Collector Current 2.0 Output Conductance goe (mS) Output Suceptance boe (mS) Output Admittance yoe (mS) goe 1.0 boe 0.5 yeo = goe + jboe IC = 1 mA f = 100 MHz 0.2 0.02 0.05 0.1 1.0 0.5 boe 0.2 0.1 goe 0.05 yoe = goe + jboe VCE = 6 V f = 100 MHz 0.2 0.5 1.0 2 5 10 0.1 1 2 5 10 0.01 20 0.02 0.1 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 6 of 7 Reverse Transfer Conductance gre (mS) 2SC2620 Package Dimensions JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g D e A Q c E HE L A A xM S A b L1 A3 e LP Reference Symbol Dimension in Millimeters A2 A A1 S b b1 c b2 A-A Section e1 c1 I1 Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name 2SC2620QBTL-E 2SC2620QCTL-E 3000 Quantity Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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