2SC5594

2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 (Previous ADE-208-798) Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “XP-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.5 0.8 35 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 2SC5594 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 12 — — — 60 — 21 14 — Typ — — — — 100 0.3 24 18 1.2 Max — 1 1 12 140 0.6 — — 1.6 Unit V µA µA µA pF GHz dB dB Test Conditions IC = 10 µA , IE = 0 VCB = 10 V , IE = 0 VCE = 4 V , RBE = ∞ VEB = 0.8 V , IC = 0 VCE = 2 V , IC = 20 mA VCB = 2 V , IE = 0 f = 1 MHz VCE = 2 V , IC = 30 mA f = 2 GHz VCE = 2 V, IC = 30 mA f = 1.8 GHz VCE = 2 V, IC = 5 mA f = 1.8 GHz Rev.2.00 Aug 10, 2005 page 2 of 7 2SC5594 Main Characteristics Maximum Collector Dissipation Curve Pc (mW) 200 200 DC Current Transfer Ratio vs. Collector Current Collector Power Dissipation DC Current Transfer Ratio 150 hFE 100 100 VCE = 3 V 2V 1V 50 0 1 2 5 10 20 50 100 0 50 100 150 200 Ambient Temperature Ta (°C) Collector Current IC (mA) (pF) Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz Gain Bandwidth Product vs. Collector Current (GHz) fT 50 1.0 Cob 0.8 40 VCE = 3 V 2V 1V Collector Output Capacitance Gain Bandwidth Product 0.6 30 0.4 20 0.2 10 0 0.1 0 1 2 5 10 20 50 100 0.2 0.5 1 2 5 10 Collector to Base Voltage VCB (V) Collector Current IC (mA) Power Gain vs. Collector Current 20 f = 1.8GHz VCE = 3 V 2V 1V 12 5 Noise Figure vs. Collector Current VCE = 1 to 3 V PG (dB) NF (dB) 16 4 f = 1.8GHz 3 Power Gain 8 Noise Figure 2 5 10 20 50 100 2 4 1 0 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 7 2SC5594 S 21 Parameter vs. Collector Current 20 f = 2GHz S21 Parameter |S21| 2 (dB) 16 VCE = 3 V 2V 1V 12 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 7 2SC5594 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 −10 −.2 −5 −4 −3 −.4 −.6 −.8 −1 −1.5 −2 −120° −90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 10 / div. 60° −150° −30° −60° Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.02 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 −10 −.2 −150° −30° −.4 −120° −60° −90° −.6 −.8 −1 −1.5 −2 −5 −4 −3 Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 2SC5594 Sparameter (VCE = 2 V, IC = 20 mA, Zo = 50 Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.577 0.560 0.541 0.504 0.495 0.477 0.458 0.456 0.448 0.435 0.438 0.430 0.425 0.426 0.424 0.425 0.428 0.424 0.426 0.428 ANG –24.5 –49.8 –72.2 –90.2 –104.5 –116.9 –126.4 –134.5 –142.5 –147.9 –153.6 –158.5 –162.6 –166.9 –171.1 –174.1 –177.4 179.7 176.6 174.7 MAG 40.31 36.64 32.05 27.56 23.84 20.64 18.11 16.13 14.46 13.15 12.01 11.06 10.24 9.56 8.99 8.45 7.98 7.59 7.19 6.84 S21 ANG 164.2 149.3 136.3 126.5 118.8 113.1 108.4 105.1 101.6 99.2 96.6 94.4 93.0 91.1 89.6 88.0 86.6 85.0 83.8 82.4 MAG 0.00674 0.0130 0.0182 0.0225 0.0256 0.0285 0.0311 0.0336 0.0355 0.0382 0.0399 0.0422 0.0443 0.0462 0.0488 0.0508 0.0527 0.0556 0.0578 0.0595 S12 ANG 82.9 74.5 68.8 63.6 61.3 58.9 57.7 57.3 57.8 56.8 57.4 57.0 58.1 58.3 58.3 58.5 58.8 58.8 59.0 58.8 MAG 0.963 0.897 0.803 0.708 0.622 0.548 0.487 0.437 0.394 0.360 0.331 0.306 0.288 0.269 0.253 0.241 0.230 0.220 0.212 0.204 S22 ANG –11.5 –23.7 –34.4 –42.4 –48.4 –53.1 –56.2 –58.7 –60.4 –61.9 –63.0 –63.3 –63.5 –64.0 –64.1 –64.1 –64.0 –64.0 –63.9 –63.7 Rev.2.00 Aug 10, 2005 page 6 of 7 2SC5594 Package Dimensions JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g D e2 b1 B B e A Q c E HE LP L Reference Symbol Dimension in Millimeters A xM A S A b L1 A3 e2 e A2 A l1 yS b b2 c c1 c A-A Section A1 S b1 b3 c1 l1 b5 e1 A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Min 0.8 0 0.8 0.25 0.35 Nom 0.1 1.8 1.15 1.8 0.3 0.1 0.2 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 b4 B-B Section Pattern of terminal position areas 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9 1.5 0.2 Ordering Information Part Name 2SC5594XP-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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