5P49V6967
VersaClock® 6E Programmable
Clock Generator
Description
Features
The 5P49V6967 is a programmable clock generator intended for
high-performance consumer, networking, industrial, computing,
and data-communications applications. This is Renesas’ sixth
generation of programmable clock technology (VersaClock 6E).
The frequencies are generated from a single reference clock. The
reference clock can originate from one of the two redundant clock
inputs. A glitchless manual switchover function allows one of the
redundant clocks to be selected during normal operation.
Two select pins allow up to four different configurations to be
programmed and may be used for different operating modes.
Typical Applications
Ethernet switch/router
PCI Express 1.0/2.0/3.0/4.0 spread spectrum on
PCI Express 1.0/2.0/3.0/4.0/5.0 spread spectrum off
Broadcast video/audio timing
Multi-function printer
Processor and FPGA clocking
Any-frequency clock conversion
MSAN/DSLAM/PON
Fiber Channel, SAN
Telecom line cards
Datacenter
Datasheet
Flexible 1.8V, 2.5V, 3.3V power rails
High-performance, low phase noise PLL, < 0.5ps RMS typical
phase jitter on outputs
Four banks of internal OTP memory
— In-system or factory programmable
I2C serial programming interface
— 0xD0 or 0xD4 I2C address options allow multiple devices
configured in a same system.
Reference LVCMOS output clock
Three Universal configurable outputs (OUT1, 2, 4):
— Differential (LVPECL, LVDS, or HCSL)
1kHz to 350MHz
— Two single-ended (in-phase or 180 degrees out of phase)
1kHz to 200MHz
— I/O VDDs can be mixed and matched, supporting 1.8V
(LVDS and LVCMOS), 2.5V, or 3.3V
— Independent spread spectrum on each output pair
Four additional LPHCSL outputs (OUT 3, 5, 6, 7)
— 1.8V low power supply
— 1kHz to 200MHz
Programmable output enable or power-down mode
Available in 5 × 5 mm 40-VFQFPN package
-40° to +85°C industrial temperature operation
Block Diagram
VDDO 0
XIN/REF
OUT0_SEL_I2CB
VDDO 1
XOUT
OUT1
FOD1
OUT1B
VDDO 2
SD/OE
SEL1/SDA
SEL0/SCL
OTP
and
Control
Logic
FOD2
PLL
OUT2
OUT2B
OEA
VDDA
FOD3
VDDD
OUT3, 5
OEB
OUT6, 7
VDDO 4
FOD4
© 2021 Renesas Electronics Corporation.
1
OUT4
OUT4B
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5P49V6967 Datasheet
Contents
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Pin Assignments ...........................................................................................................................................................................................3
Pin Descriptions............................................................................................................................................................................................3
Absolute Maximum Ratings ..........................................................................................................................................................................6
Thermal Characteristics................................................................................................................................................................................6
Recommended Operating Conditions...........................................................................................................................................................6
Electrical Characteristics ..............................................................................................................................................................................7
Test Loads ..................................................................................................................................................................................................14
Jitter Performance Characteristics..............................................................................................................................................................15
PCI Express Jitter Performance and Specification .....................................................................................................................................16
Features and Functional Blocks .................................................................................................................................................................18
10.1 Device Startup and Power-on-Reset................................................................................................................................................18
10.2 Internal Crystal Oscillator (XIN/REF) ...............................................................................................................................................19
10.2.1 Choosing Crystals .............................................................................................................................................................19
10.2.2 Tuning the Crystal Load Capacitor....................................................................................................................................19
10.3 Programmable Loop Filter................................................................................................................................................................21
10.4 Fractional Output Dividers (FOD).....................................................................................................................................................21
10.4.1 Individual Spread Spectrum Modulation ...........................................................................................................................21
10.4.2 Bypass Mode ....................................................................................................................................................................21
10.4.3 Cascaded Mode ................................................................................................................................................................21
10.4.4 Dividers Alignment ............................................................................................................................................................21
10.4.5 Programmable Skew.........................................................................................................................................................22
10.5 Output Drivers ..................................................................................................................................................................................22
10.6 SD/OE Pin Function .........................................................................................................................................................................22
10.7 I2C Operation ...................................................................................................................................................................................23
Typical Application Circuit ..........................................................................................................................................................................24
11.1 Input – Driving the XIN/REF .............................................................................................................................................................25
11.1.1 Driving XIN/REF with a CMOS Driver ...............................................................................................................................25
11.1.2 Driving XIN with a LVPECL Driver ....................................................................................................................................26
11.2 Output – Single-ended or Differential Clock Terminations ...............................................................................................................27
11.2.1 LVDS Termination.............................................................................................................................................................27
11.2.2 LVPECL Termination ........................................................................................................................................................28
11.2.3 HCSL Termination.............................................................................................................................................................29
11.2.4 LVCMOS Termination .......................................................................................................................................................29
Package Outline Drawings .........................................................................................................................................................................30
Marking Diagram .........................................................................................................................................................................................30
Ordering Information ...................................................................................................................................................................................30
Revision History ..........................................................................................................................................................................................31
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Pin Assignments
VDDO1
OUT1
OUT1B
NC
OEB
VDDO
VDD
OE_buffer
VDDO0
Pin Assignments for 5 × 5 mm 40-VFQFPN Package – Top View
OUT0_SEL_I2CB
40 39 38 37 36 35 34 33 32 31
30
VDDO2
1
2
29
OUT2
XIN/REF
VDDA
3
28
OUT2B
4
27
VDD
VDDO
5
26
VDD
OUT7
OUT7B
6
25
7
24
VDD_CORE
OUT3
OUT6
8
23
OUT3B
OUT6B
9
22
NC
SD/OE
10
11 12 13 14 15 16
21
17 18 19 20
NC
OUT4
OEA
VDDO4
OUT5B
OUT5
VDD
SEL1/SD
EPAD
OUT4B
NC
XOUT
VDDO
Figure 1.
SEL0/SCL
1.
40-pin VFQFPN
2.
Pin Descriptions
Table 1.
Pin Descriptions
Number
Name
Type
Description
1
NC
Input
Do not connect
2
XOUT
Input
Crystal Oscillator interface output.
3
XIN/REF
Input
Crystal Oscillator interface input, or single-ended LVCMOS clock input. Input
voltage needs to be below 1.2V. Refer to the Output Drivers section for more
details.
4
VDDA
Power
5
VDDO
Power
Analog functions power supply pin. Connect to 1.8V.
Connect to 1.8V. Power pin for outputs 3, 5–7.
6
OUT7
Output
Output clock 7. Low-Power HCSL (LP-HCSL) output.
7
OUT7B
Output
Complementary output clock 7. Low-power HCSL (LP-HCSL) output.
8
OUT6
Output
Output clock 6. Low-power HCSL (LP-HCSL) output.
9
OUT6B
Output
Complementary output clock 6. Low-power HCSL (LP-HCSL) output.
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Number
Name
Type
Description
10
SD/OE
Input
Internal
Pull-down
Enables/disables the outputs (OE) or powers down the chip (SD). The SH bit
controls the configuration of the SD/OE pin. The SH bit needs to be high for
SD/OE pin to be configured as SD. The SP bit (0x02) controls the polarity of the
signal to be either active HIGH or LOW only when pin is configured as OE
(Default is active LOW.) Weak internal pull-down resistor. When configured as
SD, the device is shut down, differential outputs are driven high/low, and the
single-ended LVCMOS outputs are driven low. When configured as OE, and
outputs are disabled, the outputs can be selected to be tri-stated or driven
high/low.
11
SEL1/SDA
Input
Internal
Pull-down
Configuration select pin, or I2C SDA input as selected by OUT0_SEL_I2CB.
12
SEL0/SCL
Input
Internal
Pull-down
Configuration select pin, or I2C SCL input as selected by OUT0_SEL_I2CB.
13
VDD
Power
Connect to 1.8V.
14
VDDO
Power
Connect to 1.8V. Power pin for outputs 3, 5–7.
15
OUT5
Output
Output clock 5. Low-power HCSL (LP-HCSL) output.
16
OUT5B
Output
Complementary output clock 5. Low-power HCSL (LP-HCSL) output.
17
OEA
Input
18
VDDO4
Power
Connect to 1.8V to 3.3V. VDD supply for OUT4.
19
OUT4
Output
Output clock 4. Refer to the Output Drivers section for more details.
20
OUT4B
Output
Complementary Output Clock 4. Refer to the Output Drivers section for more
details.
21
NC
—
Do not connect.
22
NC
—
Do not connect.
23
OUT3B
Output
Complementary Output Clock 3. Refer to the Output Drivers section for more
details.
24
OUT3
Output
Output Clock 3. Refer to the Output Drivers section for more details.
25
VDD_Core
Power
Connect to 1.8V
26
VDD
Power
Connect to 1.8V
27
VDD
Power
Connect to 1.8V
28
OUT2B
Output
Complementary output clock 2. Refer to the Output Drivers section for more
details.
29
OUT2
Output
Output Clock 2. Refer to the Output Drivers section for more details.
30
VDDO2
Power
Connect to 1.8V to 3.3V. VDD supply for OUT2.
31
OUT1B
Output
Complementary output clock 1. Refer to the Output Drivers section for more
details.
32
OUT1
Output
Output Clock 1. Refer to the Output Drivers section for more details.
© 2021 Renesas Electronics Corporation.
Internal
Pull-down
Active-low Output Enable pin for outputs 3 and 5.
0 = Enable outputs; 1 = Disable outputs. This pin has internal pull-down.
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5P49V6967 Datasheet
Number
Name
Type
Description
33
VDDO1
Power
Connect to 1.8V to 3.3V. VDD supply for OUT1.
34
OEB
Input
35
NC
—
36
VDDO
Power
Connect to 1.8V. Power pin for outputs 3, 5–7.
37
VDD
Power
Connect to 1.8V.
38
OE_buffer
39
VDDO0
Power
40
OUT0_SE
_I2CB
Output
EPAD
GND
GND
Internal
Pull-down
Do not connect.
Internal
Pull-up
© 2021 Renesas Electronics Corporation.
Active-low Output Enable pin for outputs 6 and 7.
0 = Enable outputs; 1 = Disable outputs. This pin has internal pull-down.
Active High Output enable for outputs 3, 5–7.
0 = Disable outputs; 1 = Enable outputs. This pin has internal pull-up.
Power supply pin for OUT0_SEL_I2CB. Connect to 1.8 to 3.3V. Sets the output
voltage levels for OUT0.
Internal
Pull-down
Latched input/LVCMOS output. At power up, the voltage at the pin
OUT0_SEL_I2CB is latched by the device and used to select the state of pins 11
and 12. If a weak pull-up (10Kohms) is placed on OUT0_SEL_I2CB, pins 11 and
12 will be configured as hardware select pins, SEL1 and SEL0. If a weak pulldown (10Kohms) is placed on OUT0_SEL_I2CB or it is left floating, pins 11 and
12 will act as the SDA and SCL pins of an I2C interface. After power up, the pin
acts as a LVCMOS reference output.
Connect to ground pad.
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5P49V6967 Datasheet
3.
Absolute Maximum Ratings
The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause permanent damage to the device.
Functional operation of the device at absolute maximum ratings is not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Table 2.
Absolute Maximum Ratings
Item
Rating
Supply Voltage, VDDA, VDDD, VDDO
3.6V
XIN/REF Input
1.2V
I2C Loading Current (SDA)
10mA
Storage Temperature, TSTG
-65°C to 150°C
Junction Temperature
125 °C
ESD Human Body Model
2000V
4.
Thermal Characteristics
Table 3.
Thermal Characteristics
Symbol
5.
Parameter
Value
Units
θJA
Theta JA. Junction to air thermal impedance (0mps)
41.08
°C/W
θJB
Theta JB. Junction to board thermal impedance (0mps)
13.76
°C/W
θJC
Theta JC. Junction to case thermal impedance (0mps)
28.45
°C/W
Recommended Operating Conditions
Table 4.
Recommended Operating Conditions
Symbol
Minimum
Typical
Maximum
Units
Power supply voltage for supporting 1.8V outputs.
1.71
1.8
1.89
V
Power supply voltage for supporting 2.5V outputs.
2.375
2.5
2.625
V
Power supply voltage for supporting 3.3V outputs.
3.135
3.3
3.465
V
VDDD
Power supply voltage for core logic functions.
1.71
3.465
V
VDDA
Analog power supply voltage. Use filtered analog power
supply.
1.71
3.465
V
TPU
Power ramp time for all VDDs to reach 90% of VDD.
0.05
50
ms
TA
Operating temperature, ambient.
-40
85
°C
CL
Maximum load capacitance (3.3V LVCMOS only).
15
pF
VDDDx
Parameter
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
6.
Electrical Characteristics
Table 5.
Current Consumption Characteristics
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C.
Symbol
Parameter
IDDCORE [a]
Core Supply Current
IDDOX
Output Buffer Supply
Current
Conditions
Typical
Maximum
Units
100MHz on all outputs, 25MHz
REFCLK.
33
42
mA
LVPECL, 350MHz, 3.3V VDDOx [b]
45
58
mA
LVPECL, 350MHz, 2.5V VDDOx [b]
36
47
mA
LVDS, 350MHz, 3.3V VDDOx [b]
26
32
mA
LVDS, 350MHz, 2.5V VDDOx [b]
25
30
mA
LVDS, 350MHz, 1.8V VDDOx [b]
22
27
mA
HCSL, 250MHz, 3.3V VDDOx [b]
39
48
mA
HCSL, 250MHz, 2.5V VDDOx [b]
37
46
mA
LVCMOS, 50MHz, 3.3V, VDDOx [b],[c]
22
27
mA
LVCMOS, 50MHz, 2.5V, VDDOx [b],[c]
20
24
mA
LVCMOS, 50MHz, 1.8V, VDDOx [b],[c]
17
21
mA
LVCMOS, 200MHz, 3.3V VDDOx [b],[c]
43
56
mA
LVCMOS, 200MHz, 2.5V VDDOx [b],[c]
33
43
mA
VDDOx [b],[c]
24
31
mA
10
12
mA
LVCMOS, 200MHz, 1.8V
IDDPD
Power Down Current
Minimum
SD asserted, I2C programming.
[a] IDDCORE = IDDA + IDDD.
[b] Measured into a 5” 50Ω trace. See Test Loads section for more details.
[c] Single CMOS driver active.
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Table 6.
AC Timing Characteristics
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
FIN [a]
FOUT [b]
Parameter
Input Frequency
Output Frequency
fVCO
VCO Operating
Frequency Range
TDC [c]
Output Duty Cycle
Conditions
Typical
Maximum
Units
MHz
Input frequency limit (Crystal)
8
40
Input frequency limit (Single-ended over XIN)
1
200
Single-ended clock output limit (LVCMOS),
individual FOD mode.
1
200
Differential clock output (LVPECL/LVDS/HCSL),
individual FOD mode.
1
350
Single-ended clock output limit (LVCMOS),
cascaded FOD mode, output 2, 4.
0.001
200
Differential clock output limit
(LVPECL/LVDS/HCSL), cascaded FOD mode,
output 2, 4.
0.001
350
Differential clock output (LP-HCSL output 3, 5, 6, 7)
0.001
200
2500
2900
MHz
MHz
Measured at VDD/2, all outputs except reference
output, VDDOX = 2.5V or 3.3V.
45
50
55
%
Measured at VDD/2, all outputs except reference
output, VDDOX = 1.8V
40
50
60
%
Measured at VDD/2, reference output OUT0
(5MHz–150.1MHz) with 50% duty cycle input.
40
50
60
%
Measured at VDD/2, reference output OUT0
(150.1MHz–200MHz) with 50% duty cycle input.
30
50
70
%
TSKEW
Output Skew
Skew between the same frequencies, with outputs
using the same driver format and phase delay set
to 0ns.
TSTARTUP [d] [e]
Startup Time
Measured after all VDDs have raised above 90% of
their target value. [f]
PLL lock time from shutdown mode.
[a]
[b]
[c]
[d]
[e]
[f]
Minimum
75
3
ps
30
ms
4
ms
Practical lower frequency is determined by loop filter settings.
A slew rate of 2.75V/ns or greater should be selected for output frequencies of 100MHz or higher.
Duty cycle is only guaranteed at maximum slew rate settings.
Actual PLL lock time depends on the loop configuration.
Includes loading the configuration bits from EPROM to PLL registers. It does not include EPROM programming/write time.
Power-up with temperature calibration enabled, please contact Renesas if shorter lock-time is required in system.
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Table 7.
Input Characteristics
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
Parameter
Pins
Minimum
Typical
Maximum
Units
3
7
pF
100
300
kΩ
CIN
Input Capacitance
SD/OE,SEL1/SDA, SEL0/SCL
RPD
Pull-down Resistor
SD/OE,SEL1/SDA, SEL0/SCL,
OUT0_SEL_I2CB
VIH
Input High Voltage
SD/OE
0.7 x VDDD
VDDD + 0.3
V
VIL
Input Low Voltage
SD/OE
GND - 0.3
0.3 x VDDD
V
VIH
Input High Voltage
OUT0_SEL_I2CB
0.65 x VDDO0
VDDO0 + 0.3
V
VIL
Input Low Voltage
OUT0_SEL_I2CB
GND - 0.3
0.4
V
VIH
Input High Voltage
XIN/REF
0.8
1.2
V
VIL
Input Low Voltage
XIN/REF
GND - 0.3
0.4
V
Input Rise/Fall Time
SD/OE, SEL1/SDA, SEL0/SCL
300
ns
TR/TF
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Table 8.
Electrical Characteristics – CMOS Outputs
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
Parameter
Conditions
Minimum
Typical
Maximum
Units
VOH
Output High Voltage
IOH = -15mA (3.3V), -12mA (2.5V).
0.7 x VDDO
VDDO
V
VOH
Output High Voltage
IOH = -8mA(1.8V)
0.5 x VDDO
VDDO
V
VOL
Output Low Voltage
IOH = 15mA (3.3V), 12mA (2.5V),
8mA (1.8V)
0.45
V
ROUT
Output Driver Impedance
CMOS Output Driver
TSR
Slew Rate, SLEW[1:0] = 00
Single-ended 3.3V LVCMOS output clock
rise and fall time, 20% to 80% of VDDO
(output load = 5pF) VDDOX = 3.3V
Slew Rate, SLEW[1:0] = 01
Slew Rate, SLEW[1:0] = 10
Slew Rate, SLEW[1:0] = 11
Slew Rate, SLEW[1:0] = 00
Slew Rate, SLEW[1:0] = 01
Slew Rate, SLEW[1:0] = 10
Single-ended 2.5V LVCMOS output clock
rise and fall time, 20% to 80% of VDDO
(output load = 5pF) VDDOX = 2.5V
Slew Rate, SLEW[1:0] = 11
Slew Rate, SLEW[1:0] = 00
Slew Rate, SLEW[1:0] = 01
Slew Rate, SLEW[1:0] = 10
Single-ended 1.8V LVCMOS output clock
rise and fall time, 20% to 80% of VDDO
(output load = 5pF) VDD = 1.8V.
Slew Rate, SLEW[1:0] = 11
IOZDD
17
Ω
1.0
2.2
V/ns
1.2
2.3
1.3
2.4
1.7
2.7
0.6
1.3
0.7
1.4
0.6
1.4
1.0
1.7
0.3
0.7
0.4
0.8
0.4
0.9
0.7
1.2
Output Leakage Current
(OUT1–4)
Tri-state outputs
5
μA
Output Leakage Current
(OUT0)
Tri-state outputs
30
μA
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Table 9.
Electrical Characteristics – LVDS Outputs
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
Parameter
Minimum
Typical
Maximum
Units
VOT (+)
Differential Output Voltage for the TRUE Binary State
247
454
mV
VOT (-)
Differential Output Voltage for the FALSE Binary State
-454
-247
mV
ΔVOT
Change in VOT between Complimentary Output States
50
mV
VOS
Output Common Mode Voltage (Offset Voltage) at 3.3V±5%, 2.5V±5%
Output Common Mode Voltage (Offset Voltage) at 1.8V±5%
ΔVOS
1.125
1.25
1.375
V
0.8
0.875
0.96
V
50
mV
Change in VOS between Complimentary Output States
IOS
Outputs Short Circuit Current, VOUT+ or VOUT - = 0V or VDDO
9
24
mA
IOSD
Differential Outputs Short Circuit Current, VOUT+ = VOUT-
6
12
mA
TR
LVDS rise time 20–80%
300
ps
TF
LVDS fall time 80–20%
300
ps
Table 10. Electrical Characteristics – LVPECL Outputs
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
Parameter
Minimum
Typical
Maximum
Units
VOH
Output Voltage High, terminated through 50Ω tied to VDD - 2V
VDDO - 1.19
VDDO - 0.69
V
VOL
Output Voltage Low, terminated through 50Ω tied to VDD - 2V
VDDO - 1.94
VDDO - 1.4
V
1.1
2
V
VSWING
Peak-to-Peak Differential Output Voltage Swing
TR
LVPECL rise time 20–80%
400
ns
TF
LVPECL fall time 80–20%
400
ns
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
Table 11. Electrical Characteristics – HCSL Outputs[a]
VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, TA = -40°C to +85°C, unless stated otherwise.
Symbol
Parameter
Conditions
dV/dt
Slew Rate
Scope averaging on [b] [c]
ΔdV/dt
Slew Rate Matching
Scope averaging on [b] [c]
V MAX
Maximum Voltage
VMIN
Minimum Voltage
Measurement on single-ended signal
using absolute value (scope averaging
off)
Minimum
Typical
Maximum
Units
4
V/ns
20
%
1150
mV
1
-300
mV
mV
VSWING
Voltage Swing
Scope averaging off [b] [f]
300
VCROSS
Crossing Voltage Value
Scope averaging off [d] [f]
250
ΔVCROSS
Crossing Voltage Variation
Scope averaging off [e]
550
mV
140
mV
[a] Guaranteed by design and characterization. Not 100% tested in production.
[b] Measured from differential waveform.
[c] Slew rate is measured through the VSWING voltage range centered on differential 0V. This results in a ±150mV window around differential
0V.
[d] VCROSS is defined as voltage where Clock = Clock# measured on a component test board and only applies to the differential rising edge
(i.e., Clock rising and Clock# falling).
[e] The total variation of all VCROSS measurements in any particular system. Note that this is a subset of VCROSS min/max (VCROSS
absolute) allowed. The intent is to limit VCROSS induced modulation by setting ΔVCROSS to be smaller than VCROSS absolute.
[f] Measured from single-ended waveform.
Table 12. Spread-Spectrum Generation Specifications
Symbol
fSSOUT
fMOD
fSPREAD
Parameter
Conditions
Spread Frequency Output frequency range for spread spectrum
Mod Frequency
Spread Value
Modulation frequency.
Minimum
Typical Maximum Units
5
300
30 to 63
Amount of spread value (programmable)–center spread.
±0.1% to ±2.5%
Amount of spread value (programmable)–down spread.
-0.2% to -5%
© 2021 Renesas Electronics Corporation.
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MHz
kHz
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5P49V6967 Datasheet
Table 13. I2C Bus (SCL/SDA) DC Characteristics
Symbol
Parameter
Conditions
VIH
Input High Level
For SEL1/SDA pin and
SEL0/SCL pin.
VIL
Input Low Level
For SEL1/SDA pin and
SEL0/SCL pin.
VHYS
Minimum
Typical
Maximum
0.7 x VDDD
V
0.3 x VDDD
Hysteresis of Inputs
Input Leakage Current
VOL
Output Low Voltage
V
V
0.05 x VDDD
IIN
Units
-1
IOL = 3mA.
36
μA
0.45
V
Table 14. I2C Bus (SCL/SDA) AC Characteristics
Symbol
Parameter
Minimum
Typical
Maximum
Units
400
kHz
Serial Clock Frequency (SCL)
10
tBUF
Bus Free Time between Stop and Start
1.3
μs
tSU:STA
Setup Time, Start
0.6
μs
tHD:STA
Hold Time, Start
0.6
μs
tSU:DAT
Setup Time, Data Input (SDA)
0.1
μs
tHD:DAT
Hold Time,
0
μs
tOVD
Output Data Valid from Clock
0.9
μs
CB
Capacitive Load for Each Bus Line
400
pF
tR
Rise Time, Data and Clock (SDA, SCL)
20 + 0.1 x CB
300
ns
tF
Fall Time, Data and Clock (SDA, SCL)
20 + 0.1 x CB
300
ns
tHIGH
High Time, Clock (SCL)
0.6
μs
tLOW
Low Time, Clock (SCL)
1.3
μs
tSU:STO
Setup Time, Stop
0.6
μs
FSCLK
Data Input (SDA) 1
P
[a] A device must internally provide a hold time of at least 300ns for the SDA signal (referred to the VIH(MIN) of the SCL signal) to bridge the
undefined region of the falling edge of SCL.
[b] I2C inputs are 3.3V tolerant.
© 2021 Renesas Electronics Corporation.
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5P49V6967 Datasheet
7.
Test Loads
Figure 2.
LVCMOS Test Load
Test
Point
Zo = 50Ω
33Ω
5pF
Device
Figure 3.
HCSL/LPHCSL Test Load
50Ω
33Ω
2pF
Differential
Zo=100Ω
33Ω
Test
Points
50Ω
2pF
Device
Figure 4.
LVDS Test Load
2pF
Differential
Zo=100Ω
Test
Points
100Ω
2pF
Device
Figure 5.
LVPECL Test Load
Differential
Zo=100Ω
Test
Points
2pF
Device
50Ω
50Ω
2pF
R
R=50Ω for 3.3V LVPECL
R=18Ω for 2.5V LVPECL
© 2021 Renesas Electronics Corporation.
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8.
Jitter Performance Characteristics
Figure 6.
Typical Phase Jitter Plot at 156.25MHz
Note: Measured with OUT2=156.25MHz on, 39.625MHz input.
Table 15. Jitter Performance[a] [b]
Symbol
JCY-CY
Jpk-pk
JRMS
Parameter
Cycle to Cycle Jitter
Period Jitter
RMS Phase Jitter
(12kHz-20MHz)
Conditions
Minimum
Typical
Maximum
Units
LVCMOS 3.3V ±5%,-40°C to 90°C
12
30
ps
All differential outputs 3.3V ±5%, -40°C to 90°C
25
35
ps
LVCMOS 3.3V ±5%, -40°C to 90°C
15
40
ps
All differential outputs 3.3V ±5%, -40°C to 90°C
24
35
ps
LVCMOS 3.3V ±5%, -40°C to 90°C
0.3
ps
All differential outputs 3.3V ±5%, -40°C to 90°C
0.6
ps
[a] Measured with 25MHz crystal input
[b] Configured with OUT0 = 25MHz–LVCMOS OUT1 = 100MHz HCSL OUT2 = 125MHz LVDS OUT3 = 156.25MHz–LVPECL
© 2021 Renesas Electronics Corporation.
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9.
PCI Express Jitter Performance and Specification
Table 16. PCI Express Jitter Performance (Spread Spectrum = OFF)
Parameter
Symbol
Conditions
tjphPCIeG1-CC
PCIe Gen1 (2.5 GT/s)
SSC = OFF
Limit
Units
Notes
4
86
ps
(p-p)
1, 2
PCIe Gen2 Lo Band (5.0 GT/s)
SSC = OFF
0.05
3
ps
(RMS)
1, 2
PCIe Gen2 Hi Band (5.0 GT/s)
SSC = OFF
0.22
3.1
ps
(RMS)
1, 2
tjphPCIeG3-CC
PCIe Gen3 (8.0 GT/s)
SSC = OFF
0.12
1
ps
(RMS)
1, 2
tjphPCIeG4-CC
PCIe Gen4 (16.0 GT/s)
SSC = OFF
0.12
0.5
ps
(RMS)
1, 2, 3,
4
tjphPCIeG5-CC
PCIe Gen5 (32.0 GT/s)
SSC = OFF
0.05
0.15
ps
(RMS)
1, 2, 3,
5
tjphPCIeG1-SRNS
PCIe Gen1 (2.5 GT/s)
SSC = OFF
3
n/a
ps
(p-p)
1, 2, 6
tjphPCIeG2-SRNS
PCIe Gen2 (5.0 GT/s)
SSC = OFF
0.26
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG3-SRNS
PCIe Gen3 (8.0 GT/s)
SSC = OFF
0.07
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG4-SRNS
PCIe Gen4 (16.0 GT/s)
SSC = OFF
0.07
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG5-SRNS
PCIe Gen5 (32.0 GT/s)
SSC = OFF
0.07
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG2-CC
PCIe Phase Jitter
(Common Clocked
Architectures)
PCIe Phase Jitter
(SRNS Architectures)
1
2
3
4
5
6
Minimum
Typical
Maximum
The Refclk jitter is measured after applying the filter functions found in PCI Express Base Specification 5.0, Revision 1.0. See the Test Loads section of
the data sheet for the exact measurement setup. The worst case results for each data rate are summarized in this table.
Jitter measurements shall be made with a capture of at least 100,000 clock cycles captured by a real-time oscilloscope (RTO) with a sample rate of
20GS/s or greater. Broadband oscilloscope noise must be minimized in the measurement. The measured PP jitter is used (no extrapolation) for RTO
measurements. Alternately, jitter measurements may be used with a Phase Noise Analyzer (PNA) extending (flat) and integrating and folding the
frequency content up to an offset from the carrier frequency of at least 200MHz (at 300MHz absolute frequency) below the Nyquist frequency. For PNA
measurements for the 2.5GT/s data rate, the RMS jitter is converted to peak to peak jitter using a multiplication factor of 8.83. In the case where real-time
oscilloscope and PNA measurements have both been done and produce different results the RTO result must be used.
SSC spurs from the fundamental and harmonics are removed up to a cutoff frequency of 2MHz taking care to minimize removal of any non-SSC content.
Note that 0.7ps RMS is to be used in channel simulations to account for additional noise in a real system.
Note that 0.25ps RMS is to be used in channel simulations to account for additional noise in a real system.
While the PCI Express Base Specification 5.0, Revision 1.0 provides the filters necessary to calculate SRIS jitter values, it does not provide specification
limits, hence the n/a in the Limit column. SRIS values are informative only. In general, a clock operating in an SRIS system must be twice as good as a
clock operating in a Common Clock system. For RMS values, twice as good is equivalent to dividing the CC value by √2.
© 2021 Renesas Electronics Corporation.
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Table 17. PCI Express Jitter Performance (Spread Spectrum = ON)
Parameter
Symbol
Conditions
tjphPCIeG1-CC
PCIe Gen1 (2.5 GT/s)
SSC = < -0.5%
Limit
Units
Notes
16
86
ps
(p-p)
1, 2
PCIe Gen2 Lo Band (5.0 GT/s)
SSC = < -0.5%
0.02
3
ps
(RMS)
1, 2
PCIe Gen2 Hi Band (5.0 GT/s)
SSC = < -0.5%
0.92
3.1
ps
(RMS)
1, 2
tjphPCIeG3-CC
PCIe Gen3 (8.0 GT/s)
SSC = < -0.5%
0.37
1
ps
(RMS)
1, 2
tjphPCIeG4-CC
PCIe Gen4 (16.0 GT/s)
SSC = < -0.5%
0.37
0.5
ps
(RMS)
1, 2, 3,
4
tjphPCIeG5-CC
PCIe Gen5 (32.0 GT/s)
SSC = < -0.5%
N/A
0.15
ps
(RMS)
1, 2, 3,
5
tjphPCIeG1-SRIS
PCIe Gen1 (2.5 GT/s)
SSC = < -0.3%
14
n/a
ps
(p-p)
1, 2, 6
tjphPCIeG2-SRIS
PCIe Gen2 (5.0 GT/s)
SSC = < -0.3%
1.4
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG3-SRIS
PCIe Gen3 (8.0 GT/s)
SSC = < -0.3%
0.42
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG4-SRIS
PCIe Gen4 (16.0 GT/s)
SSC = < -0.3%
0.36
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG5-SRIS
PCIe Gen5 (32.0 GT/s)
SSC = < -0.3%
N/A
n/a
ps
(RMS)
1, 2, 6
tjphPCIeG2-CC
PCIe Phase Jitter
(Common Clocked
Architectures)
PCIe Phase Jitter
(SRIS Architectures)
1
2
3
4
5
6
Minimum
Typical
Maximum
The Refclk jitter is measured after applying the filter functions found in PCI Express Base Specification 5.0, Revision 1.0. See the Test Loads section of
the data sheet for the exact measurement setup. The worst case results for each data rate are summarized in this table.
Jitter measurements shall be made with a capture of at least 100,000 clock cycles captured by a real-time oscilloscope (RTO) with a sample rate of
20GS/s or greater. Broadband oscilloscope noise must be minimized in the measurement. The measured PP jitter is used (no extrapolation) for RTO
measurements. Alternately, jitter measurements may be used with a Phase Noise Analyzer (PNA) extending (flat) and integrating and folding the
frequency content up to an offset from the carrier frequency of at least 200MHz (at 300MHz absolute frequency) below the Nyquist frequency. For PNA
measurements for the 2.5GT/s data rate, the RMS jitter is converted to peak to peak jitter using a multiplication factor of 8.83. In the case where real-time
oscilloscope and PNA measurements have both been done and produce different results the RTO result must be used.
SSC spurs from the fundamental and harmonics are removed up to a cutoff frequency of 2MHz taking care to minimize removal of any non-SSC content.
Note that 0.7ps RMS is to be used in channel simulations to account for additional noise in a real system.
Note that 0.25ps RMS is to be used in channel simulations to account for additional noise in a real system.
While the PCI Express Base Specification 5.0, Revision 1.0 provides the filters necessary to calculate SRIS jitter values, it does not provide specification
limits, hence the n/a in the Limit column. SRIS values are informative only. In general, a clock operating in an SRIS system must be twice as good as a
clock operating in a Common Clock system. For RMS values, twice as good is equivalent to dividing the CC value by √2.
© 2021 Renesas Electronics Corporation.
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10. Features and Functional Blocks
10.1 Device Startup and Power-on-Reset
The 5P49V6975A has an internal power-up reset (POR) circuit. All VDDs must be connected to the desired supply voltage to trigger a POR.
The user can define specific default configurations through internal One-Time-Programmable (OTP) memory -- either the user or factory can
program the default configuration. Contact Renesas if a specific factory-programmed default configuration is required, or refer to the
VersaClock 6E Programming Guide.
The device will identity which of the two modes to operate in by the state of the OUT0_SEL_I2CB pin at POR. Both modes’ default
configurations can be programmed as follows:
1.
Software Mode (I2C): OUT0_SEL_I2CB is low at POR.
The I2C interface will be open to users for in-system programming, overriding device default configurations at any time.
2.
Hardware Select Mode: OUT0_SEL_I2CB is high at POR.
The device has been programmed to load OTP at power-up (REG0[7] = 1). The device will load internal registers according to Table 18.
Power-Up Behavior.
Internal OTP memory can support up to four configurations, which selectable by the SEL0/SEL1 pins.
At POR, logic levels at SEL0 and SEL1 pins must be settled, which results in the selected configuration to be loaded at power up.
After the first 10ms of operation, the levels of the SELx pins can be changed, either to low or to the same level as VDDD/VDDA. The
SELx pins must be driven with a digital signal of < 300ns rise/fall time and only a single pin can be changed at a time. After a pin level
change, the device must not be interrupted for at least 1ms so that the new values have time to load and take effect.
Table 18. Power-Up Behavior
OUT0_SEL_I2CB
at POR
SEL1
SEL0
I2C
Access
REG0:7
Config
1
0
0
No
0
0
1
0
1
No
0
1
1
1
0
No
0
2
1
1
1
No
0
3
0
X
X
Yes
1
I2C
defaults
0
X
X
Yes
0
0
© 2021 Renesas Electronics Corporation.
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10.2 Internal Crystal Oscillator (XIN/REF)
10.2.1 Choosing Crystals
A crystal manufacturer will calibrate its crystals to the nominal frequency with a certain load capacitance value. When the oscillator load
capacitance matches the crystal load capacitance, the oscillation frequency will be accurate. When the oscillator load capacitance is lower
than the crystal load capacitance, the oscillation frequency will be higher than nominal and vice versa. Therefore, for an accurate oscillation
frequency you must match the oscillator load capacitance with the crystal load capacitance.
10.2.2 Tuning the Crystal Load Capacitor
Cs1 and Cs2 are stray capacitances at each crystal pin and typical values are between 1pF and 3pF (see Figure 7).
Ce1 and Ce2 are additional external capacitors. Increasing the load capacitance reduces the oscillator gain, so it is recommended to consult
the manufacturer when adding Ce1 and/or Ce2 to avoid crystal startup issues.
Ci1 and Ci2 are integrated programmable load capacitors, one at XIN and one at XOUT.
Figure 7.
Tuning the Crystal Load Capacitor
The value of each capacitor is composed of a fixed capacitance amount plus a variable capacitance amount set with the XTAL[5:0] register.
Ci1 and Ci2 are commonly programmed to be the same value. Adjustment of the crystal tuning capacitors allows maximum flexibility to
accommodate crystals from various manufacturers. The range of tuning capacitor values available are in accordance with the following table.
Ci1/Ci2 starts at 9pF with the setting 000000b, and can be increased up to 25pF with the setting 111111b. The step per bit is 0.5pF.
Table 19. XTAL[5:0] Tuning Capacitor
Parameter
Bits
Step (pF)
Min (pF)
Max (pF)
XTAL
6
0.5
9
25
You can write the following equation for this capacitance:
Ci = 9pF + 0.5pF × XTAL[5:0]
CXIN = Ci1 + Cs1 + Ce1
CXOUT = Ci2 + Cs2 + Ce2
The final load capacitance of the crystal:
CL = CXIN × CXOUT / (CXIN + CXOUT)
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5P49V6967 Datasheet
It is recommended to set the same value at each crystal pin meaning:
CXIN = CXOUT
Example 1: The crystal load capacitance is specified as 8pF and the stray capacitance at each crystal pin is Cs = 1.5pF. Assuming an equal
capacitance value at XIN and XOUT, the equation is as follows:
8pF = (9pF + 0.5pF × XTAL[5:0] + 1.5pF) / 2
So, XTAL[5:0] = 11 (decimal)
Example 2: The crystal load capacitance is specified as 12pF and the stray capacitance Cs is unknown. Footprints for external capacitors Ce
are added and a worst case Cs of 5pF is used. This example uses Cs + Ce = 5pF; the correct value for Ce can be determined later to make
5pF together with Cs.
12pF = (9pF + 0.5pF × XTAL[5:0] + 5pF) / 2
So, XTAL[5:0] = 20 (decimal)
Table 20. Recommended Crystal Characteristics
Parameter
Minimum
Mode of Oscillation
Typical
Maximum
Units
25
40
MHz
10
100
Ω
7
pF
12
pF
8
pF
100
μW
Fundamental
Frequency
8
Equivalent Series Resistance (ESR)
Shunt Capacitance
Load Capacitance (CL) at < = 25MHz
6
Load Capacitance (CL) > 25MHz to 40MHz
6
Maximum Crystal Drive Level
© 2021 Renesas Electronics Corporation.
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10.3 Programmable Loop Filter
The device PLL loop bandwidth operating range depends on the input reference frequency (Fref).
Table 21. Loop Filter Settings
Input Reference
Frequency (MHz)
Loop Bandwidth
Minimum (kHz)
Loop Bandwidth
Maximum (kHz)
1
40
126
350
300
1000
10.4 Fractional Output Dividers (FOD)
The 5P49V6975A has four fractional output dividers (FOD). Each FOD is comprised of a 12-bit integer counter and a 24-bit fractional counter.
The output divider can operate in integer divide only mode for improved performance, or use the fractional counters to generate a clock
frequency accurate to 50ppb.
FODs support the following features.
10.4.1 Individual Spread Spectrum Modulation
The output clock frequencies can be modulated to spread energy across a broader range of frequencies, thereby lowering system EMI. Each
divider has individual spread ability. Spread modulation independent of output frequency, a triangle wave modulation between 30 and 63kHz.
Spread spectrum can be applied to any output clock, clock frequency, or spread amount from ±0.25% to ±2.5% center-spread and -0.5%
to -5% down-spread.
10.4.2 Bypass Mode
Bypass mode (divide by 1) allows the output to behave as a buffered copy from the input or another FOD.
10.4.3 Cascaded Mode
As shown in the block diagram on page 1, FODs can be cascaded for lower output frequency.
For example, if OUT1 is configured to run at 12.288MHz and needs another 48kHz output, the user can cascade FOD2 by taking input from
OUT1, with a divide ratio of 256. As a result, OUT 2 runs at 48kHz while in alignment with 12.288MHz on OUT1.
10.4.4 Dividers Alignment
Each output divider block has a synchronizing pulse to provide startup alignment between outputs dividers. This allows alignment of outputs
for low skew performance.
When the 5P49V6975A is in hardware select mode, outputs are automatically aligned at POR. The same synchronization reset is also
triggered when switching between configurations with the SEL0/1 pins. This ensures that the outputs remain aligned in every configuration.
When the 5P49V6975A is using software mode, I2C is used to reprogram an output divider during operation, and therefore, alignment can be
lost. Alignment can be restored by manually triggering a reset through I2C.
The outputs are aligned on the falling edges of each output by default. Rising edge alignment can also be achieved by using the
programmable skew feature to delay the faster clock by 180 degrees. The programmable skew feature also allows for fine tuning of the
alignment.
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5P49V6967 Datasheet
10.4.5 Programmable Skew
The 5P49V6975A can skew outputs by quadrature values. The skew on each output can be adjusted from 0 to 360 degrees. Skew is
adjusted in units equal to 1/32 of the VCO period. As a result, for 100MHz output and a 2800MHz VCO, the user can select how many
11.161ps units to be added to the skew (resulting in units of 0.402 degrees). For example, 0, 0.402, 0.804, 1.206, 1.408, and so on. The
granularity of the skew adjustment is always dependent on the VCO period and the output period.
10.5 Output Drivers
Device output drivers can individually support the following features:
2.5V or 3.3V voltage level for HCSL/LVPECL operation
1.8V, 2.5V, or 3.3V voltage levels for CMOS/LVDS operation
CMOS supports four operating modes:
— CMOSD: OUTx and OUTxB 180 degrees out of phase
— CMOSX2: OUTx and OUTxB phase-aligned
— CMOS1: only OUTx pin is on
— CMOS2: only OUTxB pin is on
When a given output is configured to CMOSD or CMOSX2, then all previously described configuration and control apply equally to both
pins.
Independent output enable/disabled by register bits. When disabled, an output can be either in a logic 1 state or Hi-Z.
The following options are used to disable outputs:
Output turned off by I2C
Output turned off by SD/OE pin
Output unused, which means it is turned off regardless of OE pin status
10.6 SD/OE Pin Function
The SD/OE pin can be programmed as follows:
OE output enable (low active)
OE output enable (high active)
Global shutdown (low active)
Global shutdown (high active)
Output behavior when disabled is also programmable. The user can select the output driver behavior when it is off as follows:
OUTx pin high, OUTxB pin low (controlled by SD/OE pin)
OUTx/OUTxB Hi-Z (controlled by SD/OE pin)
OUTx pin high, OUTxB pin low (configured through I2C)
OUTx/OUTxB Hi-Z (configured by I2C)
The user can disable the output with either I2C or SD/OE pin. For more information, see the VersaClock 6E Programming Guide.
© 2021 Integrated Device Technology, Inc.
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5P49V6967 Datasheet
10.7 I2C Operation
The 5P49V6975A acts as a slave device on the I2C bus using one of the two I2C addresses (0xD0 or 0xD4) to allow multiple devices to be
used in the system. The interface accepts byte-oriented block write and block read operations.
Address bytes (2 bytes) specify the register address of the byte position of the first register to write or read.
Data bytes (registers) are accessed in sequential order from the lowest to the highest byte (most significant bit first).
Read and write block transfers can be stopped after any complete byte transfer. During a write operation, data will not be moved into the
registers until the STOP bit is received, at which point, all data received in the block write will be written simultaneously.
For full electrical I2C compliance, use external pull-up resistors for SDATA and SCLK.
Figure 8.
I2C R/W Sequence
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11. Typical Application Circuit
Figure 9.
Typical Application Circuit
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11.1 Input – Driving the XIN/REF
11.1.1 Driving XIN/REF with a CMOS Driver
In some instances, it is preferable to have XIN/REF driven by a clock input -- for reasons such as better SNR, multiple input select with device
CLKIN, etc. The XIN/REF pin can take an input when its amplitude is between 500mV and 1.2V, and the slew rate more than 0.2V/ns.
The XIN/REF input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The
XOUT pin can be left floating.
Figure 10. Overdriving XIN with a CMOS Driver
XOUT
VDD
Ro
Zo = 50 Ohm
Rs
C3
R1
V_XIN
XIN / REF
Ro + Rs = 50 ohm
1 nF
LVCMOS
R2
Table 22. Nominal Voltage Divider Values for Overdriving XIN with Single-ended Driver
LVCMOS Diver VDD
Ro + Rs
R1
R2
V_XIN (peak)
Ro+Rs+R1+R2
3.3
50.0
130
75
0.97
255
2.5
50.0
100
100
1.00
250
1.8
50.0
62
130
0.97
242
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5P49V6967 Datasheet
11.1.2 Driving XIN with a LVPECL Driver
Figure 11 shows an example of the interface diagram for a 3.3V LVPECL driver. This is a standard LVPECL termination with one side of the
driver feeding the XIN/REF input. It is recommended that all components in the schematic be placed in the layout; though some components
may not be used, they can be used for debugging purposes. The datasheet specifications are characterized and guaranteed using a quartz
crystal as the input. If the driver is 2.5V LVPECL, the only required change is to use the appropriate R3 value.
Figure 11. Overdriving XIN with a LVPECL Driver
XOUT
C1
Zo = 50 Ohm
XIN / REF
1 nF
Zo = 50 Ohm
+3.3V LVPECL Driv er
R1
50
R2
50
R3
50
Table 23 shows resistor values that ensure the maximum drive level for the XIN port is not exceeded for all combinations of 5% tolerance
on the driver VDD, VDDO0, and 5% resistor tolerances. The resistor values can be adjusted to reduce the loading for a slower and weaker
LVCMOS driver by increasing the impedance of the R1–R2 divider. To better assist with this assessment, the total load (Ro+Rs+R1+R2)
on the driver is included in the table.
Table 23. Nominal Voltage Divider Values for Overdriving XIN with Single-ended Driver
LVCMOS Diver VDD
Ro + Rs
R1
R2
Vrx (peak)
Ro+Rs+R1+R2
3.3
50.0
130
75
0.97
255
2.5
50.0
100
100
1.00
250
1.8
50.0
62
130
0.97
242
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11.2 Output – Single-ended or Differential Clock Terminations
11.2.1 LVDS Termination
For a general LVDS interface, the recommended value for the termination impedance (ZT) is between 90Ω and 132Ω. The actual value
should be selected to match the differential impedance (Zo) of your transmission line. A typical point-to-point LVDS design uses a 100Ω
parallel resistor at the receiver and a 100Ω. Differential transmission-line environment. In order to avoid any transmission-line reflection
issues, the components should be surface mounted and must be placed as close to the receiver as possible. The standard termination
schematic as shown in figure Standard Termination or the termination of figure Optional Termination can be used, which uses a center tap
capacitance to help filter common mode noise. The capacitor value should be approximately 50pF. In addition, since these outputs are
LVDS compatible, the input receiver's amplitude and common-mode input range should be verified for compatibility with the Renesas LVDS
output.
For example, the LVDS outputs cannot be AC coupled by placing capacitors between the LVDS outputs and the 100Ω shunt load. If
AC coupling is required, the coupling caps must be placed between the 100Ω shunt termination and the receiver. In this manner,
the termination of the LVDS output remains DC coupled. If using a non-standard termination, it is recommended to contact Renesas and
confirm that the termination will function as intended.
Figure 12. Standard and Optional Terminations
LVDS
Driver
ZO
T
LVDS
Receiver
Standard
LVDS
Driver
ZT
2 LVDS
ZT Receiver
ZO
Optional
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5P49V6967 Datasheet
11.2.2 LVPECL Termination
The clock layout topology shown below are typical terminations for LVPECL outputs. The differential outputs generate ECL/LVPECL
compatible outputs. Therefore, terminating resistors (DC current path to ground) or current sources must be used for functionality. These
outputs are designed to drive 50Ω transmission lines. Matched impedance techniques should be used to maximize operating frequency and
minimize signal distortion. For VDDO = 2.5V, the VDDO – 2V is very close to ground level. The R3 in 2.5V LVPECL Output Termination can
be eliminated and the termination is shown in 2.5V LVPECL Output Termination (2).
Figure 13. 3.3V LVPECL Output Termination
Figure 15. 2.5V LVPECL Output Termination
VDDO = 2.5V
3.3V
VDDO = 3.3V
Zo=50ohm
2.5V
Zo=50ohm
+
VersaClock 6E
Output Driver
+
VersaClock 6E
Output Driver
Receiver
Zo=50ohm
Receiver
Zo=50ohm
-
LVPECL
R1
50ohm
2.5V LVPECL
Driver
R2
50ohm
R1
50ohm
R3
18ohm
RTT
50ohm
Figure 16. 2.5V LVPECL Output Termination (2)
Figure 14. 3.3V LVPECL Output Termination (2)
VDDO = 2.5V
3.3V
VDDO = 3.3V
R3
125ohm
R2
50ohm
2.5V
3.3V
R4
125ohm
Zo=50ohm
+
Zo=50ohm
+
VersaClock 6E
Output Driver
VersaClock 6E
Output Driver
Receiver
Receiver
Zo=50ohm
-
Zo=50ohm
LVPECL
2.5V LVPECL
R1
84ohm
R2
84ohm
R1
50ohm
R2
50ohm
Figure 17. 2.5V LVPECL Output Termination (3)
2.5V
VDDO = 2.5V
R1
250ohm
2.5V
R3
250ohm
Zo=50ohm
+
VersaClock 6E
Output Driver
Receiver
Zo=50ohm
2.5V LVPECL
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28
R2
62.5ohm
R4
62.5ohm
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5P49V6967 Datasheet
11.2.3 HCSL Termination
HCSL termination scheme applies to both 3.3V and 2.5V VDDO.
Figure 18. HCSL Receiver Terminated
33
Figure 19. HCSL Source Terminated
Zo=50ohm
Zo=50ohm
33
+
VersaClock 6E
Output Driver
+
VersaClock 6E
Output Driver
Receiver
33
Zo=50ohm
Receiver
Zo=50ohm
33
-
-
HCSL
HCSL
50
50
50
50
11.2.4 LVCMOS Termination
Each output pair can be configured as a standalone CMOS or dual-CMOS output driver. An example of CMOSD driver termination is shown
in the following figure:
CMOS1 – Single CMOS active on OUTx pin
CMOS2 – Single CMOS active on OUTxB pin
CMOSD – Dual CMOS outputs active on both OUTx and OUTxB pins, 180 degrees out of phase
CMOSX2 – Dual CMOS outputs active on both OUTx and OUTxB pins, in-phase.
Figure 20. LVCMOS Termination
33
Zo=50ohm
+
VersaClock 6E
Output Driver
Receiver
33
Zo=50ohm
-
CMOSD
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12. Package Outline Drawings
The package outline drawings are located at the end of this document and are accessible from the Renesas website (see Ordering
Information for POD links). The package information is the most current data available and is subject to change without revision of this
document.
13. Marking Diagram
Lines 1 and 2 indicate the part number.
Line 3:
“YYWW” is the last digit of the year and week that the part was assembled.
# denotes the sequential lot number.
“$” denotes the mark code.
14. Ordering Information
Orderable Part Number [a][b]
Package
Carrier Type
Temperature
5P49V6967AdddNDGI
5 × 5 mm 40-VFQFPN
Tray
-40° to +85°C
5P49V6967AdddNDGI8
5 × 5 mm 40-VFQFPN
Tape and Reel
-40° to +85°C
5P49V6967A000NDGI
5 × 5 mm 40-VFQFPN
Tray
-40° to +85°C
5P49V6967A000NDGI8
5 × 5 mm 40-VFQFPN
Tape and Reel
-40° to +85°C
[a] “ddd” denotes factory programmed configurations based on required settings. Please contact factory for factory programming.
[b] “000” denotes un-programmed parts for user customization.
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15. Revision History
Revision Date
July 7, 2021
Description of Change
Updated the descriptive text in the LVDS Termination section.
Updated the Package Outline Drawings section.
August 20, 2020
Updated slew rate terminology in section Driving XIN/REF with a CMOS Driver.
October 8, 2019
Updated Absolute Maximum Ratings table.
Updated PCI Express Jitter Performance tables (Table 16 and Table 17).
Updated Electrical Characteristics tables (Table 8, Table 10 and Table 13).
June 19, 2019
August 30, 2018
July 5, 2018
March 16, 2018
December 12, 2017
PCIe specification updated.
Added recommended power ramp time.
Expanded spread spectrum value range.
I2C tolerant voltage footnote changed to 3.3V.
LVDS Termination section allows AC-coupling for LVDS signals
Updated schematics for Driving XIN/REF with a CMOS Driver and Driving XIN with an LVPECL Driver
sections.
Removed all references to CLKIN.
Updated absolute maximum ratings for supply voltage to 3.6V.
Updated typical and maximum values in Current Consumption table.
Minor updates to AC Timing Characteristics, CMOS Outputs, and LVDS Outputs tables.
Initial release.
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40-VFQFPN, Package Outline Drawing
5.00 x 5.00 x 0.90 mm Body, 3.60 x 3.60 mm Epad, 0.4mm Pitch
NDG40P3, PSC-4292-03, Rev 01, Page 1
© Integrated Device Technology, Inc.
40-VFQFPN, Package Outline Drawing
5.00 x 5.00 x 0.90 mm Body, 3.60 x 3.60 mm Epad, 0.4mm Pitch
NDG40P3, PSC-4292-03, Rev 01, Page 2
Package Revision History
© Integrated Device Technology, Inc.
Description
Date Created
Rev No.
Mar. 15, 2017
Rev 00
Initial Release
July 10, 2019
Rev 01
Updated Format and Recommended Land Pattern
IMPORTANT NOTICE AND DISCLAIMER
RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL
SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING
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INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A
PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible
for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3)
ensuring your application meets applicable standards, and any other safety, security, or other requirements. These
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expands or otherwise alters any applicable warranties or warranty disclaimers for these products.
(Rev.1.0 Mar 2020)
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