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841S102EGILFT

841S102EGILFT

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP-20

  • 描述:

    IC CLK GENERATOR PLL 20-TSSOP

  • 数据手册
  • 价格&库存
841S102EGILFT 数据手册
Crystal-to-HCSL, 100MHz PCI Express ™ Clock Synthesizer General Description Features The 841S102 is a PLL-based clock synthesizer specifically designed for PCI_Express™ Clock applications. This device generates a 100MHz differential HCSL clock from an input reference of 25MHz. The input reference may be derived from an external source or by the addition of a 25MHz crystal to the on-chip crystal oscillator. An external reference is applied to the XTAL_IN pin with the XTAL_OUT pin left floating.The device offers spread spectrum clock output for reduced EMI applications. An I2C bus interface is used to enable or disable spread spectrum operation as well as select either a down spread value of -0.35% or -0.5%.The 841S102 is available in a lead-free package. • • • • • • • • • • • 841S102 Datasheet Two 0.7V current mode differential HCSL output pairs Crystal oscillator interface: 25MHz Output frequency: 100MHz RMS phase jitter @ 100MHz (12kHz – 20MHz): 1.23ps (typical) Cycle-to-cycle jitter: 20ps (maximum) I2C support with readback capabilities up to 400kHz Spread Spectrum for electromagnetic interference (EMI) reduction 3.3V operating supply mode -40°C to 85°C ambient operating temperature Lead-free (RoHS 6) package PCI Express Gen 1, 2 and 3 jitter compliant HiPerClockS™ Block Diagram XTAL_IN Pin Assignment 25MHz OSC PLL XTAL_OUT SDATA Pullup SCLK Pullup I2C Logic Divider Network 2 2 SRCT[1:2] SRCC[1:2] 2 VSS VDD SRCT2 SRCC2 SRCT1 SRCC1 VSS VDD VSS IREF IREF 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VDD SDATA SCLK nc XTAL_OUT XTAL_IN VDD VSS VDDA VSS 841S102 20-Lead TSSOP 4.4mm x 6.5mm x 0.925mm package body G Package Top View ©2016 Integrated Device Technology, Inc. 1 Revision B, July 7, 2016 841S102 Datasheet Pin Description and Pin Characteristics Tables Table 1. Pin Descriptions Number Name Type Description 1, 7, 9, 11, 13 VSS Power Power supply ground. 2, 8, 14, 20 VDD Power Power supply pins. 3, 4 SRCT2, SRCC2 Output Differential output pair. HCSL interface levels. 5, 6 SRCT1, SRCC1 Output Differential output pair. HCSL interface levels. 10 IREF Input An external fixed precision resistor (475) from this pin to ground provides a reference current used for differential current-mode SRCCx, SRCTx clock outputs. 12 VDDA Power Analog supply for PLL. 15, 16 XTAL_IN, XTAL_OUT Input Crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output. 17 nc Unused 18 SCLK Input Pullup I2C compatible SCLK. This pin has an internal pullup resistor. Open drain. LVCMOS/LVTTL interface levels. 19 SDATA I/O Pullup I2C compatible SDATA. This pin has an internal pullup resistor. LVCMOS/LVTTL interface levels. No connect. NOTE: Pullup refers to internal input resistors. See Table 2, Pin Characteristics, for typical values. Table 2. Pin Characteristics Symbol Parameter CIN Input Capacitance 2 pF RPULLUP Input Pullup Resistor 51 k ©2016 Integrated Device Technology, Inc. Test Conditions 2 Minimum Typical Maximum Units Revision B, July 7, 2016 841S102 Datasheet Serial Data Interface To enhance the flexibility and function of the clock synthesizer, a two-signal I2C serial interface is provided. Through the Serial Data Interface, various device functions, such as clock output buffers, can be individually enabled or disabled. The registers associated with the serial interface initialize to their default setting upon power-up, and therefore, use of this interface is optional. Clock device register changes are normally made upon system initialization, if any are required. Data Protocol The clock driver serial protocol accepts byte write, byte read, block write and block read operations from the controller. For block write/read operation, the bytes must be accessed in sequential order from lowest to highest byte (most significant bit first) with the ability to stop after any complete byte has been transferred. For byte write and byte read operations, the system controller can access individually indexed bytes. The offset of the indexed byte is encoded in the command code, as described in Table 3A. The block write and block read protocol is outlined in Table 3B, while Table 3C outlines the corresponding byte write and byte read protocol. The slave receiver address is 11010010 (D2h). Table 3A.Command Code Definition Bit 7 Description 0 = Block read or block write operation, 1 = Byte read or byte write operation. 6:5 Chip select address, set to “00” to access device. 4:0 Byte offset for byte read or byte write operation. For block read or block write operations, these bits must be “00000”. ©2016 Integrated Device Technology, Inc. 3 Revision B, July 7, 2016 841S102 Datasheet Table 3B. Block Read and Block Write Protocol Bit 1 2:8 Description = Block Write Bit Start 1 Slave address - 7 bits 2:8 Description = Block Read Start Slave address - 7 bits 9 Write 9 Write 10 Acknowledge from slave 10 Acknowledge from slave 11:18 Command Code - 8 bits 11:18 Command Code - 8 bits Acknowledge from slave 19 Acknowledge from slave Byte Count - 8 bits 20 Repeat start 19 20:27 28 29:36 37 38:45 46 Acknowledge from slave 21:27 Data byte 1 - 8 bits Acknowledge from slave Data byte 2 - 8 bits 28 Read = 1 29 Acknowledge from slave 30:37 Acknowledge from slave 38 Data Byte/Slave Acknowledges 39:46 Data Byte N - 8 bits 47 Acknowledge from slave 48:55 Stop Slave address - 7 bits 56 Byte Count from slave - 8 bits Acknowledge Data Byte 1 from slave - 8 bits Acknowledge Data Byte 2 from slave - 8 bits Acknowledge Data Bytes from Slave/Acknowledge Data Byte N from slave - 8 bits Not Acknowledge Table 3C. Byte Read and Byte Write Protocol Bit 1 2:8 Description = Byte Write Bit Start 1 Slave address - 7 bits 2:8 Description = Byte Read Start Slave address - 7 bits 9 Write 9 Write 10 Acknowledge from slave 10 Acknowledge from slave 11:18 Command Code - 8 bits 11:18 Command Code - 8 bits Acknowledge from slave 19 Acknowledge from slave Data Byte - 8 bits 20 Repeat start 19 20:27 28 Acknowledge from slave 29 Stop ©2016 Integrated Device Technology, Inc. 21:27 4 Slave address - 7 bits 28 Read 29 Acknowledge from slave 30:37 Data from slave - 8 bits 38 Not Acknowledge 39 Stop Revision B, July 7, 2016 841S102 Datasheet Control Registers Table 3G. Byte 3:Control Register 3 Table 3D. Byte 0: Control Register 0 Bit @Pup Name 7 0 Reserved 6 1 5 1 4 1 Description Bit @Pup Name Description Reserved 7 1 Reserved Reserved Reserved Reserved 6 0 Reserved Reserved Reserved Reserved 5 1 Reserved Reserved SRC[T/C]2 Output Enable 0 = Disable (Hi-Z) 1 = Enable 4 0 Reserved Reserved SRC[T/C]2 3 1 Reserved Reserved 2 1 Reserved Reserved 1 1 Reserved Reserved 0 1 Reserved Reserved 3 1 SRC[T/C]1 SRC[T/C]1 Output Enable 0 = Disable (Hi-Z) 1 = Enable 2 1 Reserved Reserved 1 0 Reserved Reserved 0 0 Reserved Reserved NOTE: Pup denotes Power-up. Table 3E. Byte 1: Control Register 1 Table 3H. Byte 4: Control Register 4 Bit @Pup Name Description Bit @Pup Name Description 7 0 Reserved Reserved 7 0 Reserved Reserved 6 0 Reserved Reserved 6 0 Reserved Reserved 5 0 Reserved Reserved 5 0 Reserved Reserved 4 0 Reserved Reserved 4 0 Reserved Reserved 3 0 Reserved Reserved 3 0 Reserved Reserved 2 0 Reserved Reserved 2 0 Reserved Reserved 1 0 Reserved Reserved 1 0 Reserved Reserved 0 0 Reserved Reserved 0 1 Reserved Reserved Table 3F. Byte 2: Control Register 2 Bit @Pup Name Table 3I. Byte 5: Control Register 5 Description 7 1 SRCT/C Spread Spectrum Selection 0 = -0.35%, 1 = - 0.5% 6 1 Reserved Reserved 5 1 Reserved Reserved 4 0 Reserved Reserved 3 1 Reserved Reserved SRC Spread Spectrum Enable 0 = Spread Off, 1 = Spread On 2 0 SRC 1 1 Reserved Reserved 0 0 Reserved Reserved ©2016 Integrated Device Technology, Inc. 5 Bit @Pup Name Description 7 0 Reserved Reserved 6 0 Reserved Reserved 5 0 Reserved Reserved 4 0 Reserved Reserved 3 0 Reserved Reserved 2 0 Reserved Reserved 1 0 Reserved Reserved 0 0 Reserved Reserved Revision B, July 7, 2016 841S102 Datasheet Table 3J. Byte 6: Control Register 6 Bit @Pup Name 7 0 TEST_SEL Table 3K. Byte 7: Control Register 7 Description REF/N or Hi-Z Select 0 = Hi-Z, 1 = REF/N TEST Clock Mode Entry Control TEST_MODE 0 = Normal Operation, 1 = REF/N or Hi-Z Mode Bit @Pup Name Description 7 0 Revision Code Bit 3 6 0 Revision Code Bit 2 5 0 Revision Code Bit 1 4 0 Revision Code Bit 0 6 0 3 0 Vendor ID Bit 3 5 0 Reserved Reserved 2 0 Vendor ID Bit 2 4 1 Reserved Reserved 1 0 Vendor ID Bit 1 3 0 Reserved Reserved 0 1 Vendor ID Bit 0 2 0 Reserved Reserved 1 1 Reserved Reserved 0 1 Reserved Reserved NOTE: Pup denotes Power-up. ©2016 Integrated Device Technology, Inc. 6 Revision B, July 7, 2016 841S102 Datasheet Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Inputs, VI -0.5V to VDD + 0.5V Outputs, VO -0.5V to VDD + 0.5V Package Thermal Impedance, JA 81.3C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units VDD Core Supply Voltage 3.135 3.3 3.465 V VDDA Analog Supply Voltage VDD – 0.22 3.3 VDD V IDD Power Supply Current 80 mA IDDA Analog Supply Current 22 mA Maximum Units Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter Test Conditions VIH Input High Voltage SDATA, SCLK 2.2 VDD + 0.3 V VIL Input Low Voltage -0.3 0.8 V IIH Input High Current SDATA, SCLK 10 µA IIL Input Low Current SDATA, SCLK SDATA, SCLK Minimum Typical VDD = VIN = 3.465V VDD = 3.465V, VIN = 0V -150 µA Table 5. Crystal Characteristics Parameter Test Conditions Mode of Oscillation Minimum Typical Maximum Units Fundamental Frequency 25 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF NOTE: Characterized using an 18pF parallel resonant crystal. ©2016 Integrated Device Technology, Inc. 7 Revision B, July 7, 2016 841S102 Datasheet AC Electrical Characteristics Table 6A. PCI Express Jitter Specifications, VDD = 3.3V±5%, TA = -40°C to 85°C Typical Maximum PCIe Industry Specification Units ƒ = 100MHz, 25MHz Crystal Input Evaluation Band: 0Hz - Nyquist (clock frequency/2) 13.3 19.3 86 ps Phase Jitter RMS; NOTE 2, 4 ƒ = 100MHz, 25MHz Crystal Input High Band: 1.5MHz - Nyquist (clock frequency/2) 1.07 1.53 3.1 ps tREFCLK_LF_RMS (PCIe Gen 2) Phase Jitter RMS; NOTE 2, 4 ƒ = 100MHz, 25MHz Crystal Input Low Band: 10kHz - 1.5MHz 0.19 0.32 3.0 ps tREFCLK_RMS (PCIe Gen 3) Phase Jitter RMS; NOTE 3, 4 ƒ = 100MHz, 25MHz Crystal Input Evaluation Band: 0Hz - Nyquist (clock frequency/2) 0.18 0.3 0.8 ps Parameter Symbol tj (PCIe Gen 1) Phase Jitter Peak-to-Peak; NOTE 1, 4 tREFCLK_HF_RMS (PCIe Gen 2) Test Conditions Minimum NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. For additional information, refer to the PCI Express Application Note section in the datasheet. NOTE 1: Peak-to-Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express Gen 1 is 86ps peak-to-peak for a sample size of 106 clock periods. NOTE 2: RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and reporting the worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1ps RMS for tREFCLK_HF_RMS (High Band) and 3.0ps RMS for tREFCLK_LF_RMS (Low Band). NOTE 3: RMS jitter after applying system transfer function for the common clock architecture. This specification is based on the PCI Express Base Specification Revision 0.7, October 2009 and is subject to change pending the final release version of the specification. NOTE 4: This parameter is guaranteed by characterization. Not tested in production. ©2016 Integrated Device Technology, Inc. 8 Revision B, July 7, 2016 841S102 Datasheet Table 6B. AC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units fMAX Output Frequency 100 MHz fREF Reference frequency 25 MHz tjit(Ø) Phase Jitter, RMS (Random); NOTE 1 1.23 ps tsk(o) Output Skew; NOTE 2, 3 tjit(cc) Cycle-to-Cycle Jitter; NOTE 2 tL PLL Lock Time FM SSC Modulation Frequency; NOTE 4 SSCRED Spectral Reduction; NOTE 4 VRB Ring-back Voltage Margin; NOTE 5, 6 VMAX Absolute Max. Output Voltage; NOTE 7, 8 VMIN Absolute Min. Output Voltage; NOTE 7, 9 -300 VCROSS Absolute Crossing Voltage; NOTE 7, 10, 11 250 VCROS S 35 PLL Mode 25MHz Crystal 30 32 -7 -10 -100 Measured between 150mV to +150mV Output Duty Cycle ps 20 ps 55 ms 33.33 kHz dB 100 mV 1150 mV mV 550 mV 140 mV 0.6 4.0 V/ns 48 52 % Total Variation of VCROSS over all edges; NOTE 7, 10, 12 Rise/Fall Edge Rate; NOTE 7, 13 odc 25MHz crystal, ƒ = 100MHz, Integration Range: 12kHz – 20MHz NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE: Characterized using a 25MHz quartz crystal. NOTE 1: Refer to phase jitter plot. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential cross points. NOTE 4: Spread Spectrum clocking enabled. NOTE 5: Measurement taken from differential waveform. NOTE 6: TSTABLE is the time the differential clock must maintain a minimum ± 150mV differential voltage after rising/falling edges before it is allowed to drop back into the VRB ±100mV differential range. NOTE 7: Measurement taken from single-ended waveform. NOTE 8: Defined as the maximum instantaneous voltage including overshoot. See Parameter Measurement Information Section. NOTE 9: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information Section. NOTE 10: Measured at crossing point where the instantaneous voltage value of the rising edge of SRCT equals the falling edge of SRCC. NOTE 11: Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points for this measurement. NOTE 12: Defined as the total variation of all crossing voltages of rising SRCT and falling SRCC, This is the maximum allowed variance in Vcross for any particular system. NOTE 13: Measured from -150mV to +150mV on the differential waveform (SRCT minus SRCC). The signal must be monotonic through the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing. ©2016 Integrated Device Technology, Inc. 9 Revision B, July 7, 2016 841S102 Datasheet Noise Power dBc Hz Typical Phase Noise at 100MHz Offset Frequency (Hz) ©2016 Integrated Device Technology, Inc. 10 Revision B, July 7, 2016 841S102 Datasheet Parameter Measurement Information 3.3V±5% 3.3V±5% 3.3V±5% 3.3V±5% VDD Measurement Point VDD VDDA VDDA 2pF Measurement Point IREF GND 2pF 0V This load condition is used for IDD, tjit(cc), tjit(Ø), and tsk(o) measurements. 0V 3.3V HCSL Output Load Test Circuit 3.3V HCSL Output Load Test Circuit SRCC1, SRCC2 SRCT1, SRCT2 tcycle n tcycle n+1 tjit(cc) = |tcycle n – tcycle n+1| 1000 Cycles RMS Phase Jitter Cycle-to-Cycle Jitter VMAX SRCC SRCC VCROSS_MAX VCROSS VCROSS_MIN SRCT VMIN SRCT Single-ended Measurement Points for Absolute Cross Point and Swing ©2016 Integrated Device Technology, Inc. Single-ended Measurement Points for Delta Cross Point 11 Revision B, July 7, 2016 841S102 Datasheet Parameter Measurement Information, continued TSTABLE VRB Rise Edge Rate +150mV VRB = +100mV 0.0V VRB = -100mV -150mV Fall Edge Rate +150mV 0.0V -150mV SRCT SRCC SRCC SRCT VRB TSTABLE Differential Measurement Points for Ringback Differential Measurement Points for Rise/Fall Edge Rate Clock Period (Differential) Positive Duty Cycle (Differential) Negative Duty Cycle (Differential) 0.0V SRCT SRCC Differential Measurement Points for Duty Cycle/Period ©2016 Integrated Device Technology, Inc. 12 Revision B, July 7, 2016 841S102 Datasheet Applications Information Power Supply Filtering Technique As in any high speed analog circuitry, the power supply pins are vulnerable to random noise. To achieve optimum jitter performance, power supply isolation is required. The 841S102 provides separate power supplies to isolate any high switching noise from the outputs to the internal PLL. VDD and VDDA should be individually connected to the power supply plane through vias, and 0.01µF bypass capacitors should be used for each pin. Figure 1 illustrates this for a generic VDD pin and also shows that VDDA requires that an additional 10 resistor along with a 10F bypass capacitor be connected to the VDDA pin. 3.3V VDD .01µF 10Ω .01µF 10µF VDDA Figure 1. Power Supply Filtering Recommendations for Unused Input and Output Pins Inputs: Outputs: LVCMOS Control Pins Differential Outputs All control pins have internal pullups; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. All unused differential outputs can be left floating. We recommend that there is no trace attached. Both sides of the differential output pair should either be left floating or terminated. Crystal Input Interface The 841S102 has been characterized with 18pF parallel resonant crystals. The capacitor values, C1 and C2, shown in Figure 2 below were determined using a 25MHz, 18pF parallel resonant crystal and were chosen to minimize the ppm error. The optimum C1 and C2 values can be slightly adjusted for different board layouts. XTAL_IN C1 18pF X1 18pF Parallel Crystal XTAL_OUT C2 18pF Figure 2. Crystal Input Interface ©2016 Integrated Device Technology, Inc. 13 Revision B, July 7, 2016 841S102 Datasheet Overdriving the XTAL Interface The XTAL_IN input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The XTAL_OUT pin can be left floating. The amplitude of the input signal should be between 500mV and 1.8V and the slew rate should not be less than 0.2V/ns. For 3.3V LVCMOS inputs, the amplitude must be reduced from full swing to at least half the swing in order to prevent signal interference with the power rail and to reduce internal noise. Figure 3A shows an example of the interface diagram for a high speed 3.3V LVCMOS driver. This configuration requires that the sum of the output impedance of the driver (Ro) and the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This VCC can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and changing R2 to 50. The values of the resistors can be increased to reduce the loading for a slower and weaker LVCMOS driver. Figure 3B shows an example of the interface diagram for an LVPECL driver. This is a standard LVPECL termination with one side of the driver feeding the XTAL_IN input. It is recommended that all components in the schematics be placed in the layout. Though some components might not be used, they can be utilized for debugging purposes. The datasheet specifications are characterized and guaranteed by using a quartz crystal as the input. XTAL_OUT R1 100 Ro Rs C1 Zo = 50 ohms XTAL_IN R2 100 Zo = Ro + Rs .1uf LVCMOS Driver Figure 3A. General Diagram for LVCMOS Driver to XTAL Input Interface XTAL_OUT C2 Zo = 50 ohms XTAL_IN .1uf Zo = 50 ohms LVPECL Driver R1 50 R2 50 R3 50 Figure 3B. General Diagram for LVPECL Driver to XTAL Input Interface ©2016 Integrated Device Technology, Inc. 14 Revision B, July 7, 2016 841S102 Datasheet Recommended Termination Figure 4A is the recommended source termination for applications where the driver and receiver will be on a separate PCBs. This termination is the standard for PCI Express™ and HCSL output 0.5" Max Rs types. All traces should be 50Ω impedance single-ended or 100Ω differential. 0.5 - 3.5" 1-14" 0-0.2" 22 to 33 +/-5% L1 L2 L4 L1 L2 L4 L5 L5 PCI Expres s PCI Expres s Connector Driver 0-0.2" L3 L3 PCI Expres s Add-in Card 49.9 +/- 5% Rt Figure 4A. Recommended Source Termination (where the driver and receiver will be on separate PCBs) Figure 4B is the recommended termination for applications where a point-to-point connection can be used. A point-to-point connection contains both the driver and the receiver on the same PCB. With a matched termination at the receiver, transmission-line reflections will 0.5" Max Rs 0 to 33 L1 be minimized. In addition, a series resistor (Rs) at the driver offers flexibility and can help dampen unwanted reflections. The optional resistor can range from 0Ω to 33Ω. All traces should be 50Ω impedance single-ended or 100Ω differential. 0-18" 0-0.2" L2 L3 L2 L3 0 to 33 L1 PCI Expres s Driver 49.9 +/- 5% Rt Figure 4B. Recommended Termination (where a point-to-point connection can be used) ©2016 Integrated Device Technology, Inc. 15 Revision B, July 7, 2016 841S102 Datasheet PCI Express Application Note PCI Express jitter analysis methodology models the system response to reference clock jitter. The block diagram below shows the most frequently used Common Clock Architecture in which a copy of the reference clock is provided to both ends of the PCI Express Link. In the jitter analysis, the transmit (Tx) and receive (Rx) serdes PLLs are modeled as well as the phase interpolator in the receiver. These transfer functions are called H1, H2, and H3 respectively. The overall system transfer function at the receiver is: Ht  s  = H3  s    H1  s  – H2  s   The jitter spectrum seen by the receiver is the result of applying this system transfer function to the clock spectrum X(s) and is: Y  s  = X  s   H3  s    H1  s  – H2  s   PCIe Gen 2A Magnitude of Transfer Function In order to generate time domain jitter numbers, an inverse Fourier Transform is performed on X(s)*H3(s) * [H1(s) - H2(s)]. PCI Express Common Clock Architecture For PCI Express Gen 1, one transfer function is defined and the evaluation is performed over the entire spectrum: DC to Nyquist (e.g for a 100MHz reference clock: 0Hz – 50MHz) and the jitter result is reported in peak-peak. PCIe Gen 2B Magnitude of Transfer Function For PCI Express Gen 3, one transfer function is defined and the evaluation is performed over the entire spectrum. The transfer function parameters are different from Gen 1 and the jitter result is reported in RMS. PCIe Gen 1 Magnitude of Transfer Function For PCI Express Gen 2, two transfer functions are defined with 2 evaluation ranges and the final jitter number is reported in rms. The two evaluation ranges for PCI Express Gen 2 are 10kHz – 1.5MHz (Low Band) and 1.5MHz – Nyquist (High Band). The plots show the individual transfer functions as well as the overall transfer function Ht. ©2016 Integrated Device Technology, Inc. PCIe Gen 3 Magnitude of Transfer Function For a more thorough overview of PCI Express jitter analysis methodology, please refer to IDT Application Note PCI Express Reference Clock Requirements. 16 Revision B, July 7, 2016 841S102 Datasheet Schematic Layout Figure 5 shows an example of the 841S102 application schematic where the device is operated at VDD = 3.3V with an 18pF parallel resonant 25MHz crystal. The schematic focuses on functional connections and is intended as an example only and may not represent the exact user configuration. For example the I2C bus connections are shown as optionally provided via a two pin header whereas they could just as easily be driven from an FPGA. Two types of HCSL termination are shown in this schematic; one for PCIe add-in cards and one for point to point connections, which are connections on the same PCB as the 841S102. As with any high speed analog circuitry, the power supply pins are vulnerable to random noise, so to achieve optimum jitter performance isolation of the VDD pin from power supply is required. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB as close to the power pins as possible. If space is limited, the 0.1uf capacitor on the VDD pin must be placed on the device side with direct return to the ground plane though vias. The remaining filter components can be on the opposite side of the PCB. Power supply filter component recommendations are a general guideline to be used for reducing external noise from coupling into the devices.The filter performance is designed for a wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supplies frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitance in the local area of all devices. Tuning caps C1 and C2 are required for frequency accuracy. C1 = C2 = 18pF are used in this example as typical values, but their value may be adjusted slightly up or down to optimize the oscillator frequency accuracy. When routing the load caps be sure to keep all routing on the top layer. Route the ground connection of C1 and C2 together and then to a ground at the 841S102. Do not share the tuning capacitor ground with any other ground, that is ensure that only crystal current circulates in the tuning capacitors. ©2016 Integrated Device Technology, Inc. 17 Revision B, July 7, 2016 841S102 Datasheet R1 33 SRCT1 Zo = 50 + TL1 VDD R2 33 SRCC1 Zo = 50 - TL2 VDD R3 50 SRCC2 SRCT2 C6 0.1uF C5 0.1uF U1 Recommended for PCI Express Add-In Card 10 9 8 7 6 5 4 3 2 1 IREF R4 50 IREF VSS VDD VSS SRCC1 SRCT1 SRCC2 SRCT2 VDD VSS R5 VSS VDDA VSS VDD XTAL_IN XTAL_OUT nc SCLK SDATA VDD 475 Ohm 11 12 13 14 15 16 17 18 19 20 VDD HCSL Termination R6 10 VDD VDDA C4 0.01u C3 10uF VDD C7 0.1uF SRCT2 C8 0.1uF 25MHz (18pF) X1 + TL3 SRCC2 C2 18pF Zo = 50 C1 18pF Zo = 50 - TL4 3.3V R9 SP J1 5 4 3 2 1 R11 R10 SP SCLK SDATA R7 50 Recommended for PCI Express Point-to-Point Connection 0 VDD 3.3V SDA 2 R12 R8 50 FB1 1 BLM18BB221SN1 0 SCL C10 10uF C9 0.1uF Figure 5. 841S102 Application Schematic. ©2016 Integrated Device Technology, Inc. 18 Revision B, July 7, 2016 841S102 Datasheet Spread Spectrum Spread-spectrum clocking is a frequency modulation technique for EMI reduction. When spread-spectrum is enabled, a 32kHz triangle waveform is used with 0.35% or 0.5% down-spread from the nominal 100MHz clock frequency. An example of a triangle frequency modulation profile is shown in Figure 6A below. An example of the amount of down spread relative to the nominal clock frequency can be seen in the frequency domain, as shown in Figure 6B. The ratio of this difference to the fundamental frequency is typically 0.35% or 0.5%. The resulting spectral reduction will be greater than 7dB, as shown in Figure 6B. It is important to note the 841S102 7dB minimum spectral reduction is the component-specific EMI reduction, and will not necessarily be the same as the system EMI reduction. ➤ The 841S102 triangle modulation frequency deviation is either 0.35% or 0.5% down-spread from the nominal clock frequency. Frequency Fnom (1 - δ) Fnom 0.5/fm 1/fm ➤ Time Figure 6A. Triangle Frequency Modulation  – 7 dBm B A  = 0.35 or 0.5%% Figure 6B. 100MHz Typical Clock Output In Frequency Domain (A) Spread-Spectrum OFF (B) Spread-Spectrum ON ©2016 Integrated Device Technology, Inc. 19 Revision B, July 7, 2016 841S102 Datasheet Power Considerations This section provides information on power dissipation and junction temperature for the 841S102. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the 841S102 is the sum of the core power plus the analog, plus the power dissipated due to loading. The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. NOTE: Please refer to Section 3 for details on calculating power dissipated due to loading. The maximum current at 85°C is as follows: IDD_MAX = 75mA IDDA_MAX = 20mA • Power (core)MAX = VDD_MAX * (IDD_MAX + IDDA_MAX) = 3.465V *(75mA + 20mA) = 329.175mW • Power (outputs)MAX = 44.5mW/Loaded Output pair If all outputs are loaded, the total power is 2 * 44.5mW = 89mW Total Power_MAX = 329.175mW + 89mW = 418.175mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 81.3°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.418W * 81.3°C/W = 119°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 7. Thermal Resistance JA for 20 Lead TSSOP, Forced Convection JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ©2016 Integrated Device Technology, Inc. 0 1 2.5 81.3°C/W 76.9°C/W 74.8°C/W 20 Revision B, July 7, 2016 841S102 Datasheet 3. Calculations and Equations. The purpose of this section is to calculate power dissipation on the IC per HCSL output pair. HCSL output driver circuit and termination are shown in Figure 7. VDD IOUT = 17mA VOUT RREF = 475 ± 1% RL 50 IC Figure 7. HCSL Driver Circuit and Termination HCSL is a current steering output which sources a maximum of 17mA of current per output. To calculate worst case on-chip power dissipation, use the following equations which assume a 50 load to ground. The highest power dissipation occurs when VDD_MAX. Power = (VDD_MAX – VOUT) * IOUT, since VOUT – IOUT * RL = (VDD_MA – IOUT * RL) * IOUT = (3.465V – 17mA * 50) * 17mA Total Power Dissipation per output pair = 44.5mW ©2016 Integrated Device Technology, Inc. 21 Revision B, July 7, 2016 841S102 Datasheet Reliability Information Table 8. JA vs. Air Flow Table for a 20 Lead TSSOP JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 81.3°C/W 76.9°C/W 74.8°C/W Transistor Count The transistor count for 841S102 is: 11,775 Package Outline and Package Dimensions Package Outline - G Suffix for 20 Lead TSSOP Table 9. Package Dimensions All Dimensions in Millimeters Symbol Minimum Maximum N 20 A 1.20 A1 0.05 0.15 A2 0.80 1.05 b 0.19 0.30 c 0.09 0.20 D 6.40 6.60 E 6.40 Basic E1 4.30 4.50 e 0.65 Basic L 0.45 0.75  0° 8° aaa 0.10 Reference Document: JEDEC Publication 95, MO-153 ©2016 Integrated Device Technology, Inc. 22 Revision B, July 7, 2016 841S102 Datasheet Ordering Information Table 10. Ordering Information Part/Order Number Marking Package Shipping Packaging Temperature 841S102EGILF ICS41S102EIL “Lead-Free” 20 Lead TSSOP Tube -40C to 85C 841S102EGILFT ICS41S102EIL “Lead-Free” 20Lead TSSOP Tape & Reel -40C to 85C ©2016 Integrated Device Technology, Inc. 23 Revision B, July 7, 2016 841S102 Datasheet Revision History Sheet Rev A B Table Page Description of Change 13 14 16, 17 18 Updated the “Overdriving the XTAL Interface” note. Updated the termination note. Updated schematic and text. Spread Spectrum note, second paragraph: The 841S102 triangle modulation frequency deviation is Either 0.35% Or 0.5% down-spread from the nominal clock frequency 2/8/13 Updated datasheet header/footer. Deleted “ICS” prefix and “I” suffix in the part number. 7/7/16 ©2016 Integrated Device Technology, Inc. Date 24 Revision B, July 7, 2016 841S102 Datasheet Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA www.IDT.com 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com/go/sales www.idt.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Product specification subject to change without notice. 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