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844246DGILF

844246DGILF

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP-24

  • 描述:

    IC SYNTHESIZER/BUFFER 24TSSOP

  • 数据手册
  • 价格&库存
844246DGILF 数据手册
FemtoClock® Crystal-to-LVDS Frequency Synthesizer w/Integrated Fanout Buffer ICS844246DI DATA SHEET General Description Features The ICS844246DI is a Crystal-to-LVDS Clock Synthesizer/Fanout Buffer designed for Fibre Channel frequencies and Gigabit Ethernet applications. The output frequency can be set using the frequency select pins and a 25MHz crystal for Ethernet frequencies, or a 26.5625MHz crystal for a Fibre Channel. The low phase noise characteristics of the ICS844246DI make it an ideal clock for these demanding applications. • • • • • Six LVDS output pairs • • • Full 3.3V or mixed 3.3V core, 2.5V output supply modes Crystal oscillator interface Output frequency range: 53.125MHz to 333.3333MHz Crystal input frequency range: 25MHz to 33.333MHz RMS phase jitter @ 125MHz, using a 25MHz crystal (1.875MHz - 20MHz): 0.416ps (typical) -40°C to 85°C ambientoperating temperature Available in lead-free (RoHS 6) package Select Function Table Inputs Function FB_SEL N_SEL1 N_SEL0 M Divide N Divide M/N 0 0 0 20 2 10 0 0 1 20 4 5 0 1 0 20 5 4 0 1 1 20 8 2.5 (default) 1 0 0 24 3 8 1 0 1 24 4 6 1 1 0 24 6 4 1 1 1 24 12 2 Block Diagram Pin Assignment Q0 nQ0 PLL_BYPASS Pullup Q1 1 XTAL_IN OSC PLL 0 N Output Divider XTAL_OUT nQ1 Q2 nQ2 nQ3 Q4 Pulldown N_SEL0 Pullup N_SEL1 Pullup ICS844246DGI REVISION A NOVEMBER 28, 2012 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Q3 nQ3 Q4 nQ4 Q5 nQ5 N_SEL1 GND GND N_SEL0 XTAL_OUT XTAL_IN Q3 M Feedback Divider FB_SEL VDDO VDDO nQ2 Q2 nQ1 Q1 nQ0 Q0 PLL_BYPASS VDDA VDD FB_SEL nQ4 Q5 ICS844246DI 24-Lead TSSOP, E-Pad 4.4mm x 7.8mm x 0.925mm package body G Package Top View nQ5 1 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Table 1. Pin Descriptions Number Name 1, 2 VDDO Power Type Output supply pins. Description 3, 4 nQ2, Q2 Output Differential output pair. LVDS interface levels. 5, 6 nQ1, Q1 Output Differential output pair. LVDS interface levels. 7, 8 nQ0, Q0 Output Differential output pair. LVDS interface levels. 9 PLL_BYPASS Input 10 VDDA Power LVCMOS / LVTTL interface levels. Analog supply pin. 11 VDD Power Core supply pin. Selects between the PLL and crystal inputs as the input to the dividers. Pullup Pulldown When LOW, selects PLL. When HIGH, bypasses the PLL. 12 FB_SEL Input 13 14 XTAL_IN, XTAL_OUT Feedback frequency select pin. LVCMOS/LVTTL interface levels. Input 15, 18 N_SEL0, N_SEL1 Input 16, 17 GND Power Power supply ground. 19, 20 nQ5, Q5 Output Differential output pair. LVDS interface levels. 21, 22 nQ4, Q4 Output Differential output pair. LVDS interface levels. 23, 24 nQ3, Q3 Output Differential output pair. LVDS interface levels. Crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output. Pullup Output frequency select pin. LVCMOS/LVTTL interface levels. NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. Table 2. Pin Characteristics Symbol Parameter CIN Input Capacitance 4 pF RPULLUP Input Pullup Resistor 51 k RPULLDOWN Input Pulldown Resistor 51 k ICS844246DGI REVISION A NOVEMBER 28, 2012 Test Conditions 2 Minimum Typical Maximum Units ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Function Tables Table 3. Crystal Function Table Inputs Function XTAL (MHz) FB_SEL N_SEL1 N_SEL0 M VCO (MHz) N Output Frequency (MHz) 25 0 0 0 20 500 2 250 25 0 0 1 20 500 4 125 25 0 1 0 20 500 5 100 25 0 1 1 20 500 8 62.5 25 1 0 0 24 600 3 200 25 1 0 1 24 600 4 150 25 1 1 0 24 600 6 100 25 1 1 1 24 600 12 50 26.5625 0 1 0 20 531.25 5 106.25 26.5625 1 0 0 24 637.5 3 212.5 26.5625 1 0 1 24 637.5 4 159.375 26.5625 1 1 0 24 637.5 6 106.25 26.5625 1 1 1 24 637.5 12 53.125 30 0 0 0 20 600 2 300 30 0 0 1 20 600 4 150 30 0 1 0 20 600 5 120 30 0 1 1 20 600 8 75 31.25 0 0 0 20 625 2 312.5 31.25 0 0 1 20 625 4 156.25 31.25 0 1 0 20 625 5 125 31.25 0 1 1 20 625 8 78.125 33.3333 0 0 0 20 666.6667 2 333.3333 33.3333 0 0 1 20 666.6667 4 166.6667 33.3333 0 1 0 20 666.6667 5 133.3333 33.3333 0 1 1 20 666.6667 8 83.3333 ICS844246DGI REVISION A NOVEMBER 28, 2012 3 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Inputs, VI XTAL_IN Other Inputs 0V to VDD -0.5V to VDD + 0.5V Outputs, IO (LVDS) Continuos Current Surge Current 10mA 15mA Package Thermal Impedance, JA 32.1C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. LVDS Power Supply DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Core Supply Voltage VDDA Test Conditions Minimum Typical Maximum Units 3.135 3.3 3.465 V Analog Supply Voltage VDD – 0.10 3.3 VDD V VDDO Output Supply Voltage 3.135 3.3 3.465 V IDD Power Supply Current 170 mA IDDA Analog Supply Current 10 mA IDDO Output Supply Current 100 mA Table 4B. LVDS Power Supply DC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Core Supply Voltage VDDA Minimum Typical Maximum Units 3.135 3.3 3.465 V Analog Supply Voltage VDD – 0.10 3.3 VDD V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 165 mA IDDA Analog Supply Current 10 mA IDDO Output Supply Current 98 mA ICS844246DGI REVISION A NOVEMBER 28, 2012 Test Conditions 4 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Table 4C. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5% VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum VIH Input High Voltage VDD = 3.465V VIL Input Low Voltage VDD = 3.465V IIH Input High Current IIL Input Low Current Typical Maximum Units 2 VDD + 0.3 V -0.3 0.8 V N_SEL[1:0], PLL_BYPASS VDD = VIN = 3.465V or 2.625V 5 µA FB_SEL VDD = VIN = 3.465V or 2.625V 150 µA N_SEL[1:0], PLL_BYPASS VDD = 3.465V or 2.625V, VIN = 0V -150 µA FB_SEL VDD = 3.465V or 2.625V, VIN = 0V -5 µA Table 4D. LVDS DC Characteristics, VDD = 3.3V ± 5%, VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change Test Conditions Minimum Typical Maximum Units 454 mV 100 mV 1.50 V 120 mV Maximum Units 33.333 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF 247 1.10 Table 5. Crystal Characteristics Parameter Test Conditions Minimum Mode of Oscillation Typical Fundamental Frequency 25 NOTE: Characterized using an 18pF parallel resonant crystal. ICS844246DGI REVISION A NOVEMBER 28, 2012 5 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER AC Electrical Characteristics Table 6. LVDS AC Characteristics, VDD = 3.3V ± 5%, VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter fOUT Output Frequency tjit(Ø) RMS Phase Jitter (Random); NOTE 1 tsk(o) Output Skew; NOTE 2, 3 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum PLL_BYPASS = 0 50 Typical In bypass mode with 25MHz Crystal, PLL_BYPASS = 1 (default) 3.125 125MHz, Integration Range: 1.875MHz – 20MHz 0.416 20% to 80% Maximum Units 333.33 MHz MHz 0.560 ps 45 ps 220 380 ps 45 55 % 25 ms NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: See Phase Noise Plot. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the output differential crosspoints. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. ICS844246DGI REVISION A NOVEMBER 28, 2012 6 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER  Typical Phase Noise at 125MHz Gb Ethernet Filter Raw Phase Noise Data   Noise Power dBc Hz 125MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.416ps (typical) Phase Noise Result by adding a Gb Ethernet filter to raw data Offset Frequency (Hz) ICS844246DGI REVISION A NOVEMBER 28, 2012 7 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Parameter Measurement Information 3.3V±5% 2.5V±5% SCOPE 3.3V±5% POWER SUPPLY + Float GND – VDD, VDDO VDD Qx SCOPE Qx VDDA VDDO VDDA + + nQx nQx 3.3V Core/3.3V LVDS Output Load AC Test Circuit – POWER SUPPLY Float GND 3.3V Core/2.5V LVDS Output Load AC Test Circuit nQ0:nQ5 nQx Q0:Q5 Qx t PW t nQy Qy odc = PERIOD t PW x 100% t PERIOD tsk(o) Output Skew Output Duty Cycle/Pulse Width/Period Noise Power Phase Noise Plot nQ0:nQ5 80% 80% VOD Q0:Q5 Phase Noise Mask 20% 20% tR tF f1 Offset Frequency f2 RMS Jitter = Area Under the Masked Phase Noise Plot Output Rise/Fall Time ICS844246DGI REVISION A NOVEMBER 28, 2012 RMS Phase Jitter 8 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Parameter Measurement Information, continued VDD out DC Input LVDS 100 out Differential Output Voltage Setup VDD out DC Input LVDS out VOS/Δ VOS ä Offset Voltage Setup ICS844246DGI REVISION A NOVEMBER 28, 2012 9 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Applications Information Overdriving the XTAL Interface The XTAL_IN input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The XTAL_OUT pin can be left floating. The amplitude of the input signal should be between 500mV and 1.8V and the slew rate should not be less than 0.2V/nS. For 3.3V LVCMOS inputs, the amplitude must be reduced from full swing to at least half the swing in order to prevent signal interference with the power rail and to reduce internal noise. Figure 1A shows an example of the interface diagram for a high speed 3.3V LVCMOS driver. This configuration requires that the sum of the output impedance of the driver (Ro) and the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This VCC can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and changing R2 to 50. The values of the resistors can be increased to reduce the loading for a slower and weaker LVCMOS driver. Figure 1B shows an example of the interface diagram for an LVPECL driver. This is a standard LVPECL termination with one side of the driver feeding the XTAL_IN input. It is recommended that all components in the schematics be placed in the layout. Though some components might not be used, they can be utilized for debugging purposes. The datasheet specifications are characterized and guaranteed by using a quartz crystal as the input. XTAL_OUT R1 100 Ro Rs C1 Zo = 50 ohms XTAL_IN R2 100 Zo = Ro + Rs .1uf LVCMOS Driver Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface XTAL_OUT C2 Zo = 50 ohms XTAL_IN .1uf Zo = 50 ohms LVPECL Driver R1 50 R2 50 R3 50 Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface ICS844246DGI REVISION A NOVEMBER 28, 2012 10 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Recommendations for Unused Input and Output Pins Inputs: Outputs: LVCMOS Control Pins LVDS Outputs All control pins have internal pullups or pulldowns; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. All unused LVDS output pairs can be either left floating or terminated with 100 across. If they are left floating, there should be no trace attached. LVDS Driver Termination For a general LVDS interface, the recommended value for the termination impedance (ZT) is between 90 and 132. The actual value should be selected to match the differential impedance (Z0) of your transmission line. A typical point-to-point LVDS design uses a 100 parallel resistor at the receiver and a 100 differential transmission-line environment. In order to avoid any transmissionline reflection issues, the components should be surface mounted and must be placed as close to the receiver as possible. IDT offers a full line of LVDS compliant devices with two types of output structures: current source and voltage source. The standard termination LVDS Driver schematic as shown in Figure 2A can be used with either type of output structure. Figure 2B, which can also be used with both output types, is an optional termination with center tap capacitance to help filter common mode noise. The capacitor value should be approximately 50pF. If using a non-standard termination, it is recommended to contact IDT and confirm if the output structure is current source or voltage source type. In addition, since these outputs are LVDS compatible, the input receiver’s amplitude and common-mode input range should be verified for compatibility with the output. ZO  ZT ZT LVDS Receiver Figure 2A. Standard Termination LVDS Driver ZO  ZT C ZT 2 LVDS ZT Receiver 2 Figure 2B. Optional Termination LVDS Termination ICS844246DGI REVISION A NOVEMBER 28, 2012 11 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 3. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadframe Base Package, Amkor Technology. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific and SOLDER PIN PIN PAD EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER SOLDER PIN LAND PATTERN (GROUND PAD) PIN PAD Figure 3. Assembly for Exposed Pad Thermal Release Path - Side View (drawing not to scale) ICS844246DGI REVISION A NOVEMBER 28, 2012 12 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Schematic Layout Figure 4 shows an example of ICS844246DI-08 application schematic. The schematic example focuses on functional As with any high speed analog circuitry, the power supply pins are vulnerable to random noise. To achieve optimum jitter performance, power supply isolation is required. The ICS844246DI provides separate VDD, VDDA and VDDO pins to isolate any high speed switching noise at the outputs from coupling into the internal PLL. connections and is not configuration specific. Refer to the pin description and functional tables in the datasheet to ensure the logic control inputs are properly set. Input and output terminations shown are intended as examples only and may not represent the exact user configuration. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB as close to the power pins as possible. If space is limited, the 0.1uF capacitor in each power pin filter should be placed on the device side of the PCB and the other components can be placed on the opposite side. In this example an 18pF parallel resonant 25MHz crystal is used with load caps C7 = C6 = 22pF. The load caps are recommended for frequency accuracy, but these may be adjusted for different board layouts. Crystals with different load capacities may be used, but the load capacitors will have to be changed accordingly. If different crystal types are used, please consult IDT for recommendations. Power supply filter recommendations are a general guideline to be used for reducing external noise from coupling into the devices. The filter performance is designed for wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supply frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitances in the local area of all devices. The schematic example shows two different LVDS output terminations; the standard termination 100 shunt termination for an LVDS compliant receiver and an AC coupled termination for a non-LVDS differential receiver. The AC coupled termination requires that the designer select the values of R4 and R6 in order to center the LVDS swing within the common mode range of the receiver. In addition the designer must make sure that the target receiver will operate reliably with the LVDS swing, which is reduced relative to other logic families such as HCSL or LVPECL. ICS844246DGI REVISION A NOVEMBER 28, 2012 13 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Logic Control Input Examples VD D Set Logic Input to '1' Set Logic Input to '0' VDD RU1 1K RU 2 No t I nstall To Logic Input pins 3. 3V To Logic Input pins RD1 N ot Inst all F B1 2 RD 2 1K 1 BLM18BB221SN 1 R 5 10 C2 10uF C1 0.1uF C3 10 uF VD D P l ac e 0 .1 u F b yp a ss c a ps d i re c tl y a dj a ce n t to th e c o rr e sp on d in g V D D an d V D DA p i ns . 12 F B_SEL PLL_BYPASS 9 15 18 N _SEL0 N _SEL1 10 3. 3V C5 0.1uF VDDA VDD U1 11 C4 0. 1uF VDD A F B2 2 1 BLM18BB221SN 1 VDD O VDD O C9 10uF 1 2 F B_ SEL C14 0.1uF PLL_BYPASS C 11 0.1uF N_SEL0 N_SEL1 C8 0.1uF P l ac e 0 .1 u F b yp as s c a p d ir e ct ly a d ja ce n t t o t he V D DO pi n s. Z o = 50 O hm 8 Q0 7 nQ 0 6 Q1 5 nQ 1 4 Q2 3 nQ 2 24 Q3 23 nQ 3 22 Q4 21 nQ 4 20 Q5 19 nQ 5 Q0 nQ0 R1 100 + Z o = 50 O hm - 13 Q1 XTAL_IN nQ1 25MHz (18pf ) 14 LVDS Termination XTAL_OU T X1 C7 22pF LVD S R eceiv er Q2 C6 22pF nQ2 Q3 nQ3 Q4 nQ4 Q5 VC C _Receiv er 0.1u R4 C10 0. 01uF R2 50 + - R6 R3 50 C 13 R eceive r Z o = 50 O hm 0.1u EPAD GND Z o = 50 O hm (Select R4 and R6 to center the LVDS swing in the common mode center of the Receiver.) 25 17 16 GND nQ5 C 12 Alte rnat e AC cou pled LVD S Te rmin atio n to n on-L VDS Rece iver . Figure 4. ICS844246DI Application Schematic ICS844246DGI REVISION A NOVEMBER 28, 2012 14 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Power Considerations This section provides information on power dissipation and junction temperature for the ICS844246DI. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS844246DI is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. NOTE: Please refer to Section 3 for details on calculating power dissipated in the load. • Power (core)MAX = VDD_MAX * (IDD_MAX + IDDA_MAX) = 3.465V * (170mA + 10mA) = 623.7mW • Power (outputs)MAX = VDDO_MAX * IDDO_MAX = 3.465V * 100mA = 346.5mW Total Power_MAX = 623.7mW + 346.5mW = 970.2mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 32.1°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.970W * 32.1°C/W = 116.1°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 7. Thermal Resistance JA for 24 Lead TSSOP, E-Pad Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ICS844246DGI REVISION A NOVEMBER 28, 2012 0 1 2.5 32.1°C/W 25.5°C/W 24.0°C/W 15 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Reliability Information Table 8. JA vs. Air Flow Table for a 24 Lead TSSOP, E-Pad JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 32.1°C/W 25.5°C/W 24.0°C/W Transistor Count The transistor count for ICS844246DI is: 3887 ICS844246DGI REVISION A NOVEMBER 28, 2012 16 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Package Outline and Package Dimensions Package Outline - G Suffix for 24 Lead TSSOP, E-Pad Table 9. Package Dimensions for 24 Lead TSSOP, E-Pad) Symbol N A A1 A2 b b1 c c1 D E E1 e L P P1   bbb All Dimensions in Millimeters Minimum Nominal 24 0.05 0.85 0.19 0.19 0.09 0.09 7.70 4.30 0.50 5.0 3.0 0° Maximum 0.90 0.22 0.127 6.40 Basic 4.40 0.65 Basic 0.60 1.10 0.15 0.95 0.30 0.25 0.20 0.16 7.90 4.50 0.70 5.5 3.2 8° 0.076 0.10 Reference Document: JEDEC Publication 95, MO-153 ICS844246DGI REVISION A NOVEMBER 28, 2012 17 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Ordering Information Table 10. Ordering Information Part/Order Number 844246DGILF 844246DGILFT Marking ICS844246DGIL ICS844246DGIL ICS844246DGI REVISION A NOVEMBER 28, 2012 Package “Lead-Free” 24 Lead TSSOP, E-Pad “Lead-Free” 24 Lead TSSOP, E-Pad 18 Shipping Packaging Tube Tape & Reel Temperature -40°C to 85°C -40°C to 85°C ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER Revision History Sheet Rev A Table Page 7 Description of Change Date Phase Noise Plot - corrected font arrow characters. ICS844246DGI REVISION A NOVEMBER 28, 2012 19 11/28/2012 ©2012 Integrated Device Technology, Inc. ICS844246DI Data Sheet FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER w/FANOUT BUFFER We’ve Got Your Timing Solution 6024 Silver Creek Valley Road San Jose, California 95138 Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com/go/contactIDT Technical Support netcom@idt.com +480-763-2056 DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright 2012. All rights reserved. IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2020 Renesas Electronics Corporation. All rights reserved.
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