BCR8KM-14LC-A8

BCR8KM-14LC Triac Medium Power Use REJ03G0334-0200 Rev.2.00 Dec.17.2004 Features • • • • IT (RMS) : 8 A VDRM : 700 V IFGTI , IRGTI, IRGT : 50 mA Viso : 2000 V • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 800 Unit V V Rev.2.00, Dec.17.2004, page 1 of 7 BCR8KM-14LC Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 48 9.5 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 98°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 2.0 1.5 1.5 1.5 50 50 50 — 3.9 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.2.00, Dec.17.2004, page 2 of 7 BCR8KM-14LC Performance Curves Maximum On-State Characteristics 102 7 5 Rated Surge On-State Current 60 On-State Current (A) 3 2 101 7 5 3 2 100 7 5 3 2 10-1 Surge On-State Current (A) 1.8 2.2 2.6 3.0 3.4 3.8 Tj = 25°C 50 40 30 20 10 0 100 0.6 1.0 1.4 2 3 5 7 101 2 3 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60 Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 VGD = 0.2 V VGT = 1.5 V PG(AV) = 0.5 W VGM = 10 V PGM =5 W Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Typical Example IRGTIII Gate Voltage (V) IGM = 2 A IFGTI IFGT I IRGT II IRGT III IRGTI 23 5 7102 23 5 7 103 23 5 7 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature Transient Thermal Impedance (°C/W) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-1 2 3 5 7 100 2 3 5 7 101 23 5 7 102 102 2 3 5 7 103 23 5 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60 Hz) Rev.2.00, Dec.17.2004, page 3 of 7 BCR8KM-14LC Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (°C/W) 103 No Fins On-State Power Dissipation (W) 7 5 3 2 102 7 5 3 2 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60 Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 120 100 80 60 40 Ambient Temperature (°C) 140 Curves apply regardless of conduction angle 140 120 All fins are black painted aluminum and greased 120 × 120 × t2.3 Case Temperature (°C) 100 80 60 40 20 0 100 × 100 × t2.3 60 × 60 × t2.3 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 0 2 4 6 8 10 12 14 16 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) Rev.2.00, Dec.17.2004, page 4 of 7 BCR8KM-14LC Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Typical Example Distribution Latching Current (mA) T2+, G– Typical Example T2+, G+ Typical Example T2–, G– 0 20 40 60 80 100 120 140 160 100 -60 -40 -20 Junction Temperature (°C) Junction Temperature (°C) 160 Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 140 120 III Quadrant Typical Example Tj = 125°C 100 80 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 140 120 100 80 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Commutation Characteristics (Tj = 125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C III Quadrant Minimum Characteristics Value Typical Example Tj = 125°C IT = 4 A τ = 500 ms VD = 200 V f = 3 Hz I Quadrant I Quadrant III Quadrant 100 7 100 2 3 5 7 101 2 3 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00, Dec.17.2004, page 5 of 7 BCR8KM-14LC Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 100 Typical Example IRGTIII IRGTI IFGTI Commutation Characteristics (Tj = 150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 III Quadrant I Quadrant Typical Example 3 Tj = 150°C Main Voltage I =4A (dv/dt)c 2T τ = 500 ms Main Current IT VD = 200 V τ 100 f = 3 Hz 7 100 2 3 5 7 101 23 Time VD (di/dt)c Time 5 7 102 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330 Ω 6V V A 330 Ω Test Procedure I 6Ω Test Procedure II 6V V A 330 Ω Test Procedure III Rev.2.00, Dec.17.2004, page 6 of 7 BCR8KM-14LC Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR8KM-14LC BCR8KM-14LC-A8 Straight type Tube 50 Type name Lead form Tube 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Dec.17.2004, page 7 of 7 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0