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EL5211AIYEZ-T13

EL5211AIYEZ-T13

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VSSOP8

  • 描述:

    IC OPAMP VFB 2 CIRCUIT 8HMSOP

  • 数据手册
  • 价格&库存
EL5211AIYEZ-T13 数据手册
EL5211A ® Data Sheet July 23, 2009 60MHz Rail-to-Rail Input-Output Op Amp Features The EL5211A is a low power, high voltage, rail-to-rail input-output amplifier. The EL5211A contains two amplifiers. Operating on nominal supplies ranging from 5V to 15V while consuming only 2.5mA per amplifier, the EL5211A has a bandwidth of 60MHz (-3dB) and provides common-mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables the EL5211A to offer maximum dynamic range at any supply voltage. • 60MHz (-3dB) bandwidth The EL5211A also features fast slewing and settling times, as well as a high continuous output drive capability of 65mA (sink and source). These features make the EL5211A ideal for high speed filtering and signal conditioning application. Other applications include battery-powered, portable devices and anywhere low power consumption is important. • Rail-to-rail output swing The EL5211A is available in the 8 Ld HMSOP package, features a standard operational amplifier pinout, and is specified for operation over a temperature range of -40°C to +85°C. • TFT-LCD panels FN6143.2 • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 2.5mA • High slew rate = 75V/µs • Unity-gain stable • Beyond the rails input capability • ±110mA output short current • Pb-free (RoHS compliant) Applications • VCOM amplifiers • Drivers for A/D converters • Data acquisition Ordering Information PART NUMBER (Note) PART MARKING • Video processing PACKAGE (Pb-free) PKG. DWG. # EL5211AIYEZ BBLAA 8 Ld HMSOP (3.0mm) MDP0050 EL5211AIYEZ-T7* BBLAA 8 Ld HMSOP (3.0mm) MDP0050 EL5211AIYEZ-T13* BBLAA 8 Ld HMSOP (3.0mm) MDP0050 • Audio processing • Active filters • Test equipment • Battery-powered applications • Portable equipment Pinout *Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. EL5211A (8 LD HMSOP) TOP VIEW VOUTA 1 VINA- 2 VINA+ 3 VS- 4 1 8 VS+ 7 VOUTB + + 6 VINB5 VINB+ CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2005, 2007, 2009. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. EL5211A Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . ±65mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 60 70 dB VCM = 0V 7 VCM = 0V 2 -5.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.9 4.8 -4.8 V 4.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) -4.0V ≤ VOUT ≤ 4.0V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 1. Measured over operating temperature range. 2. Slew rate is measured on rising and falling edges. 3. NTSC signal generator used. 2 FN6143.2 July 23, 2009 EL5211A Electrical Specifications PARAMETER VS+ = +5V, VS- = 0V, RL = 1kΩ to 2.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 4) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 4.5V 60 70 dB VCM = 2.5V 7 VCM = 2.5V 2 -0.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 4.8 200 mV 4.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 5) 1V ≤ VOUT ≤ 4V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 4. Measured over operating temperature range. 5. Slew rate is measured on rising and falling edges. 6. NTSC signal generator used. Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 7) IB Input Bias Current RIN Input Impedance 3 VCM = 7.5V 7 VCM = 7.5V 2 1 µV/°C 60 nA GΩ FN6143.2 July 23, 2009 EL5211A Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) DESCRIPTION CONDITION MIN TYP MAX UNIT CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 60 70 dB -0.5 +15.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 14.8 200 mV 14.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 8) 1V ≤ VOUT ≤ 14V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.16 % dP Differential Phase (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.22 ° NOTES: 7. Measured over operating temperature range. 8. Slew rate is measured on rising and falling edges. 9. NTSC signal generator used. Typical Performance Curves 25 VS = ±5V TA = +25°C TYPICAL PRODUCTION DISTRIBUTION 400 300 200 100 VS = ±5V QUANTITY (AMPLIFIERS) TYPICAL PRODUCTION DISTRIBUTION 20 15 10 5 4 21 19 17 15 13 11 9 7 5 12 8 10 6 4 2 -0 -2 -4 -6 -8 -10 -12 INPUT OFFSET VOLTAGE (mV) FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION 3 0 0 1 QUANTITY (AMPLIFIERS) 500 INPUT OFFSET VOLTAGE DRIFT, TCVOS (µV/°C) FIGURE 2. INPUT OFFSET VOLTAGE DRIFT FN6143.2 July 23, 2009 EL5211A Typical Performance Curves (Continued) 0.008 INPUT BIAS CURRENT (µA) INPUT OFFSET VOLTAGE (mV) 2.0 1.5 1.0 0.5 0 -0.5 -50 -10 30 70 110 VS = ±5V 0.004 0 -0.004 -0.008 -0.012 -50 150 -10 TEMPERATURE (°C) OUTPUT LOW VOLTAGE (V) OUTPUT HIGH VOLTAGE (V) 4.92 4.90 4.88 -10 30 70 150 110 VS = ±5V IOUT = 5mA -4.87 -4.89 -4.91 -4.93 -4.95 -50 150 -10 TEMPERATURE (°C) 30 70 110 150 TEMPERATURE (°C) FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE 75 78 VS = ±5V RL = 1kΩ 70 65 VS = ±5V 77 SLEW RATE (V/µs) OPEN-LOOP GAIN (dB) 110 FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE -4.85 VS = ±5V IOUT = 5mA 4.94 4.86 -50 70 TEMPERATURE (°C) FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE 4.96 30 76 75 74 73 60 -50 -10 30 70 110 150 TEMPERATURE (°C) FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE 5 72 -50 -10 30 70 110 150 TEMPERATURE (°C) FIGURE 8. SLEW RATE vs TEMPERATURE FN6143.2 July 23, 2009 EL5211A Typical Performance Curves (Continued) 2.70 TA = +25°C 2.7 SUPPLY CURRENT (mA) 2.5 2.3 2.1 1.9 1.7 1.5 4 8 12 16 VS = ±5V 2.65 2.60 2.55 2.50 2.45 2.40 -50 20 -10 SUPPLY VOLTAGE (V) 110 150 FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs TEMPERATURE 0 0.30 DIFFERENTIAL PHASE (°) -0.02 -0.04 -0.06 -0.08 -0.10 -0.12 -0.14 V = ±5V S -0.16 AV = 2 RL = 1kΩ -0.18 0 0.25 0.20 0.15 0.10 0.05 0 100 0 200 100 IRE -30 FIGURE 12. DIFFERENTIAL PHASE 80 VS = ±5V AV = 2 RL = 1kΩ FREQ = 1MHz -40 GAIN (dB) 2nd HD -70 -90 4 6 8 10 VOP-P (V) FIGURE 13. HARMONIC DISTORTION vs VOP-P 6 40 20 130 PHASE 70 0 3rd HD 2 190 GAIN -60 0 250 60 -50 -80 200 IRE FIGURE 11. DIFFERENTIAL GAIN DISTORTION (dB) 70 TEMPERATURE (°C) FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY VOLTAGE DIFFERENTIAL GAIN (%) 30 -20 1k PHASE (°) SUPPLY CURRENT (mA) 2.9 10 10k 100k 1M 10M -50 100M FREQUENCY (Hz) FIGURE 14. OPEN LOOP GAIN AND PHASE FN6143.2 July 23, 2009 EL5211A MAGNITUDE (NORMALIZED) (dB) 5 3 VS = ±5V AV = 1 CLOAD = 0pF MAGNITUDE (NORMALIZED) (dB) Typical Performance Curves (Continued) 1kΩ 1 -1 560Ω -3 150Ω -5 100k 1M 100pF 15 1000pF 47pF 10pF 5 -5 -15 VS = ±5V AV = 1 RL = 1kΩ -25 100k 100M 10M 25 1M FREQUENCY (Hz) FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS CL MAXIMUM OUTPUT SWING (VP-P) OUTPUT IMPEDANCE (Ω) 400 350 300 250 200 150 100 50 100k 1M 100M FREQUENCY (Hz) FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS RL 0 10k 10M 10M 100M 12 10 8 6 4 VS = ±5V 2 AV = 1 RL = 1kΩ DISTORTION
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