EL5211TIYEZ-T7

S D FOR NEW DESIGN NOT RECOMMENDE T EN EM AC D REPL NO RECOMMENDE l Support Center at ca ni ch contact our Te c www.intersil.com/ts 1-888-INTERSIL or EL5211T DATASHEET FN6893 Rev 0.00 May 12, 2010 60MHz Rail-to-Rail Input-Output Operational Amplifier The EL5211T is a high voltage rail-to-rail input-output amplifier with low power consumption. The EL5211T contains two amplifiers. Each amplifier exhibits beyond the rail input capability, rail-to-rail output capability and is unity gain stable. Features The maximum operating voltage range is from 4.5V to 19V. It can be configured for single or dual supply operation, and typically consumes only 3mA per amplifier. The EL5211T has an output short circuit capability of ±300mA and a continuous output current capability of ±65mA. • 3mA Supply Current (per Amplifier) The EL5211T features a high slew rate of 100V/µs, and fast settling time. Also, the device provides common mode input capability beyond the supply rails, rail-to-rail output capability, and a bandwidth of 60MHz (-3dB). This enables the amplifiers to offer maximum dynamic range at any supply voltage. These features make the EL5211T an ideal amplifier solution for use in TFT-LCD panels as a VCOM driver or static gamma buffer, and in high speed filtering and signal conditioning applications. Other applications include battery power and portable devices, especially where low power consumption is important. • Rail-to-rail Output Swing The EL5211T is available in a thermally enhanced 8 Ld HMSOP package, and a thermally enhanced 8 Ld DFN package. Both feature a standard operational amplifier pinout. The device operates over an ambient temperature range of -40°C to +85°C. • Data Acquisition • 60MHz (-3dB) Bandwidth • 4.5V to 19V Maximum Supply Voltage Range • 100V/µs Slew Rate • ±65mA Continuous Output Current • ±300mA Output Short Circuit Current • Unity-gain Stable • Beyond the Rails Input Capability • Built-in Thermal Protection • -40°C to +85°C Ambient Temperature Range • Pb-Free (RoHS Compliant) Applications*(see page 13) • TFT-LCD Panels • VCOM Amplifiers • Static Gamma Buffers • Drivers for A/D Converters • Video Processing • Audio Processing • Active Filters • Test Equipment • Battery-powered Applications • Portable Equipment 10 +15V +15V EL5211T + VS+ 0.1µF VINA- VOUTB VINA+ VINB- 0 4 4.7µF PANEL CAPACITANCE VINB+ 2 FIGURE 1. TYPICAL TFT-LCD VCOM APPLICATION 1kΩ 0 -2 -6 TFT-LCD PANEL FN6893 Rev 0.00 May 12, 2010 VS = ±5V AV = 1 CL = 1.5pF RL || 1kΩ (PROBE) -4 0 VS- 6 GAIN (dB) VOUTA 8 PANEL CAPACITANCE 560Ω 150Ω -8 -10 100k 1M 10M FREQUENCY (Hz) 100M FIGURE 2. FREQUENCY RESPONSE FOR VARIOUS RL Page 1 of 15 EL5211T Pin Configuration EL5211T (8 LD DFN) TOP VIEW EL5211T (8 LD HMSOP) TOP VIEW VOUTA 1 VINA- 2 8 VS+ + VINA+ 3 + VS- 4 VOUTA 1 7 VOUTB VINA- 2 6 VINB- VINA+ 3 8 VS+ PD 6 VINB- VS- 4 5 VINB+ 7 VOUTB 5 VINB+ THERMAL PAD IS ELECTRICALLY CONNECTED TO VS- THERMAL PAD IS ELECTRICALLY CONNECTED TO VS- Pin Descriptions PIN NUMBER (HMSOP, DFN) PIN NAME 1 VOUTA FUNCTION EQUIVALENT CIRCUIT Amplifier A output (Reference Circuit 1) 2 VINA- Amplifier A inverting input (Reference Circuit 2) 3 VINA+ Amplifier A non-inverting input (Reference Circuit 2) 4 VS- 5 VINB+ Negative power supply Amplifier B non-inverting input (Reference Circuit 2) 6 VINB- Amplifier B inverting input (Reference Circuit 2) 7 VOUTB Amplifier B output (Reference Circuit 1) 8 VS+ Pad PD Positive power supply Functions as a heat sink. Electrically connected to VS-. Connect the thermal pad to VS- plane on the PCB for optimum thermal performance. VS+ VS+ VOUTx VINx VS- GND VS- CIRCUIT 1 CIRCUIT 2 Ordering Information PART NUMBER (Notes 2, 3) PART MARKING PACKAGE (Pb-Free) PKG. DWG. # EL5211TILZ-T13 (Note 1) 11T 8 Ld DFN L8.2x3 EL5211TIYEZ BBBNA 8 Ld HMSOP MDP0050 EL5211TIYEZ-T7 (Note 1) BBBNA 8 Ld HMSOP MDP0050 EL5211TIYEZ-T13 (Note 1) BBBNA 8 Ld HMSOP MDP0050 NOTES: 1. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for EL5211T. For more information on MSL please see techbrief TB363. FN6893 Rev 0.00 May 12, 2010 Page 2 of 15 EL5211T Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . .+19.8V Input Voltage Range (VINx+, VINx-) . . . VS- - 0.5V, VS+ + 0.5V Input Differential Voltage (VINx+ - VINx-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VS+ + 0.5V)-(VS- - 0.5V) Maximum Continuous Output Current . . . . . . . . . . . ±65mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . 3000V Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 8 Ld HMSOP (Notes 4, 5) . . . . . . . 62 13 8 Ld DFN (Notes 4, 5). . . . . . . . . . 58 8 Storage Temperature . . . . . . . . . . . . . . . . -65°C to +150°C Ambient Operating Temperature . . . . . . . . . -40°C to +85°C Maximum Junction Temperature . . . . . . . . . . . . . . . +150°C Power Dissipation . . . . . . . . . . . . . . . See Figures 34 and 35 Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 5. For JC, the “case temp” location is the center of the exposed metal pad on the package underside. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1k to 0V, TA = +25°C, Unless Otherwise Specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 5 18 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 0V TCVOS Average Offset Voltage Drift (Note 6) 8 Ld HMSOP package 13 µV/°C 8 Ld DFN package 9 µV/°C VCM = 0V 2 IB Input Bias Current RIN Input Impedance 1 G CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio For VIN from -5.5V to 5.5V 50 73 dB AVOL Open-Loop Gain -4.5V VOUTx 4.5V 62 78 dB -5.5 60 nA +5.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = +5mA ISC Short-Circuit Current VCM = 0V, Source: VOUTx short to VS-, Sink: VOUTx short to VS+ IOUT Output Current 4.85 -4.95 -4.85 V 4.95 V ±300 mA ±65 mA POWER SUPPLY PERFORMANCE (VS+) - (VS-) Supply Voltage Range IS Supply Current VCM = 0V, No load PSRR Power Supply Rejection Ratio Supply is moved from ±2.25V to ±9.5V 4.5 5.5 60 19 V 7.5 mA 75 dB DYNAMIC PERFORMANCE SR Slew Rate (Note 7) -4.0V VOUTx 4.0V, 20% to 80% 100 V/µs tS Settling to +0.1% (Note 8) AV = +1, VOUTx = 2V step, RL = 1k1k (probe), CL = 1.5pF 85 ns BW -3dB Bandwidth RL = 1kCL = 1.5pF 60 MHz FN6893 Rev 0.00 May 12, 2010 Page 3 of 15 EL5211T Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1k to 0V, TA = +25°C, Unless Otherwise Specified. (Continued) DESCRIPTION CONDITIONS MIN TYP MAX UNIT GBWP Gain-Bandwidth Product AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 32 MHz PM Phase Margin AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 50 ° CS Channel Separation f = 5MHz 90 dB Electrical Specifications PARAMETER VS+ = +5V, VS- = 0V, RL = 1k to 2.5V, TA = +25°C, Unless Otherwise Specified. DESCRIPTION CONDITION MIN TYP MAX UNIT INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 2.5V TCVOS Average Offset Voltage Drift (Note 6) 8 Ld HMSOP package 5 18 mV 11 µV/°C 8 Ld DFN package 8 µV/°C VCM = 2.5V 2 IB Input Bias Current RIN Input Impedance 1 G CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio For VIN from -0.5V to 5.5V 45 68 dB AVOL Open-Loop Gain 0.5V VOUTx 4.5V 62 82 dB -0.5 60 nA +5.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -4.2mA VOH Output Swing High IL = +4.2mA ISC Short-circuit Current VCM = 2.5V, Source: VOUTx short to VS-, Sink: VOUTx short to VS+ IOUT Output Current 60 4.85 150 mV 4.94 V ±110 mA ±65 mA POWER SUPPLY PERFORMANCE (VS+) - (VS-) Supply Voltage Range IS Supply Current VCM = 2.5V, No load PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 4.5 6.0 60 19 V 7.5 mA 75 dB DYNAMIC PERFORMANCE SR Slew Rate (Note 7) 1V VOUTx 4V, 20% to 80% 75 V/µs tS Settling to +0.1% (Note 8) AV = +1, VOUTx = 2V step, RL = 1k1k (probe), CL = 1.5pF 90 ns BW -3dB Bandwidth RL = 1kCL = 1.5pF 60 MHz GBWP Gain-Bandwidth Product AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 32 MHz PM Phase Margin AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 50 ° CS Channel Separation f = 5MHz 90 dB FN6893 Rev 0.00 May 12, 2010 Page 4 of 15 EL5211T Electrical Specifications PARAMETER VS+ = +18V, VS- = 0V, RL = 1k to 9V, TA = +25°C, Unless Otherwise Specified. DESCRIPTION CONDITION MIN TYP MAX UNIT 7 18 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 9V TCVOS Average Offset Voltage Drift (Note 6) 8 Ld HMSOP package 14 µV/°C 8 Ld DFN package 11 µV/°C IB Input Bias Current RIN Input Impedance 1 G CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio For VIN from -0.5V to 18.5V 53 75 dB AVOL Open-Loop Gain 0.5V VOUTx 17.5V 62 104 dB VCM = 9V 2 -0.5 60 nA +18.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -6mA VOH Output Swing High IL = +6mA ISC Short-circuit Current VCM = 9V, Source: VOUTx short to VS-, Sink: VOUTx short to VS+ IOUT Output Current 80 150 17.85 17.92 mV V ±300 mA ±65 mA POWER SUPPLY PERFORMANCE (VS+) - (VS-) Supply Voltage Range IS Supply Current VCM = 9V, No load PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 4.5 6.0 60 19 V 7.5 mA 75 dB DYNAMIC PERFORMANCE SR Slew Rate (Note 7) 1V VOUTx 17V, 20% to 80% 100 V/µs tS Settling to +0.1% (Note 8) AV = +1, VOUTx = 2V step, RL = 1k1k (probe), CL = 1.5pF 100 ns BW -3dB Bandwidth RL = 1kCL = 1.5pF 60 MHz GBWP Gain-Bandwidth Product AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 32 MHz PM Phase Margin AV = -10, RF = 1kRG = 100 RL = 1k1k (probe), CL = 1.5pF 50 ° CS Channel Separation f = 5MHz 90 dB NOTES: 6. Measured over -40°C to +85°C ambient operating temperature range. See the typical TCVOS production distribution shown in the “Typical Performance Curves” on page 6. 7. Typical slew rate is an average of the slew rates measured on the rising (20% to 80%) and the falling (80% to 20%) edges of the output signal. 8. Settling time measured as the time from when the output level crosses the final value on rising/falling edge to when the output level settles within a ±0.1% error band. The range of the error band is determined by: Final Value(V)±[Full Scale(V)*0.1%]. FN6893 Rev 0.00 May 12, 2010 Page 5 of 15 EL5211T Typical Performance Curves 10 TYPICAL PRODUCTION DISTRIBUTION VS = ±5V TA = +25°C 400 350 300 250 200 150 100 50 0 6 5 4 3 2 1 0 TYPICAL PRODUCTION DISTRIBUTION 8 6 4 2 0 2 6 10 14 18 22 26 30 34 38 INPUT OFFSET VOLTAGE DRIFT (|µV|/°C) FIGURE 4. INPUT OFFSET VOLTAGE DRIFT (HMSOP) VS = ±5V 5 0 -5 -10 -50 6 10 14 18 22 26 30 34 38 INPUT OFFSET VOLTAGE DRIFT (|µV|/°C) FIGURE 5. INPUT OFFSET VOLTAGE DRIFT (DFN) 0 50 100 TEMPERATURE (°C) 150 FIGURE 6. INPUT OFFSET VOLTAGE vs TEMPERATURE 4 4.95 OUTPUT HIGH VOLTAGE (V) VS = ±5V 3 2 1 0 -50 2 10 VS = ±5V -40°C to +85°C 10 TYPICAL PRODUCTION DISTRIBUTION 7 INPUT OFFSET VOLTAGE (mV) QUANTITY (AMPLIFIERS) 12 INPUT BIAS CURRENT (nA) 8 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT OFFSET VOLTAGE (mV) FIGURE 3. INPUT OFFSET VOLTAGE DISTRIBUTION VS = ±5V -40°C to +85°C 9 QUANTITY (AMPLIFIERS) QUANTITY (AMPLIFIERS) 450 0 50 100 150 TEMPERATURE (°C) FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE FN6893 Rev 0.00 May 12, 2010 VS = ±5V IOUT = +5mA 4.94 4.93 4.92 -50 0 50 100 TEMPERATURE (°C) 150 FIGURE 8. OUTPUT HIGH VOLTAGE vs TEMPERATURE Page 6 of 15 EL5211T Typical Performance Curves (Continued) VS = ±5V IOUT = -5mA OPEN LOOP GAIN (dB) OUTPUT HIGH VOLTAGE (V) -4.92 -4.93 -4.94 -4.95 -4.96 -4.97 -50 0 50 100 VS = ±5V RL = 1kΩ 100 80 60 40 -50 150 0 TEMPERATURE (°C) FIGURE 9. OUTPUT LOW VOLTAGE vs TEMPERATURE SUPPLY CURRENT (mA) SLEW RATE (V/µs) 150 2.95 VS = ±5V RL = 1kΩ 140 120 100 80 60 -50 0 50 100 TEMPERATURE (°C) 4.0 SLEW RATE (V/µs) 3.0 2.5 8.5 FIGURE 13. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY VOLTAGE FN6893 Rev 0.00 May 12, 2010 2.85 2.80 2.75 0 50 100 TEMPERATURE (°C) 150 140 3.5 4.5 5.5 6.5 7.5 SUPPLY VOLTAGE (±V) 2.90 FIGURE 12. SUPPLY CURRENT PER AMPLIFIER vs TEMPERATURE TA = +25°C NO LOAD INPUT AT GND 3.5 VS = ±5V NO LOAD INPUT AT GND 2.70 -50 150 FIGURE 11. SLEW RATE vs TEMPERATURE SUPPLY CURRENT (mA) 100 FIGURE 10. OPEN-LOOP GAIN vs TEMPERATURE 160 2.0 2.5 50 TEMPERATURE (°C) 9.5 120 100 80 TA = +25°C AV = 1 RL = 1kΩ CL = 8pF 60 40 2 4 6 8 SUPPLY VOLTAGE (±V) 10 FIGURE 14. SLEW RATE vs SUPPLY VOLTAGE Page 7 of 15 EL5211T Typical Performance Curves (Continued) 100 120 100 80 60 40 2 4 6 8 SUPPLY VOLTAGE (±V) 80 -20 10 VS = ±5V RF = 1kΩ, RG = 100Ω RL = 1kΩ || 1kΩ (PROBE) CL = 1.5pF -20 10 100 1k 40 10k 100k 1M FREQUENCY (Hz) 10M -2 100pF 47pF 10pF 5 0 -5 VS = ±5V AV = 1 RL = 1kΩ -20 100k 1M 10M FREQUENCY (Hz) 100M FIGURE 19. FREQUENCY RESPONSE FOR VARIOUS CL FN6893 Rev 0.00 May 12, 2010 560Ω -6 150Ω -10 100k 1M 10M FREQUENCY (Hz) 100M FIGURE 18. FREQUENCY RESPONSE FOR VARIOUS RL OUTPUT IMPEDANCE (Ω) GAIN (dB) 0 -4 -40 100M 15 -15 -40 100M 1kΩ 2 1000 1000pF 10M -8 20 -10 4 0 FIGURE 17. OPEN LOOP GAIN AND PHASE 10 10k 100k 1M FREQUENCY (Hz) VS = ±5V AV = 1 CL = 1.5pF RL || 1kΩ (PROBE) 6 GAIN (dB) 80 PHASE (°) OPEN LOOP GAIN (dB) 120 40 1k 0 10 8 GAIN 100 40 FIGURE 16. OPEN LOOP GAIN AND PHASE 160 0 VS = ±5V RF = 5kΩ, RG = 100Ω RL = 1kΩ CL = 8pF 0 200 20 80 20 PHASE 80 120 PHASE 40 FIGURE 15. OPEN LOOP GAIN vs SUPPLY VOLTAGE 60 160 GAIN 60 10 100 200 PHASE (°) TA = +25°C RL = 1kΩ OPEN LOOP GAIN (dB) OPEN LOOP GAIN (dB) 140 100 VS = ±5V RF = 2kΩ RL = 50Ω SOURCE = 0dBm 10 1 0.1 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M FIGURE 20. CLOSED LOOP OUTPUT IMPEDANCE Page 8 of 15 EL5211T 12 -30 10 -40 DISTORTION (dBc) MAXIMUM OUTPUT SWING (VP-P) Typical Performance Curves (Continued) 8 6 4 VS = ±5V AV = 1 RL = 1kΩ DISTORTION