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EL5211T
DATASHEET
FN6893
Rev 0.00
May 12, 2010
60MHz Rail-to-Rail Input-Output Operational Amplifier
The EL5211T is a high voltage rail-to-rail input-output
amplifier with low power consumption. The EL5211T
contains two amplifiers. Each amplifier exhibits beyond
the rail input capability, rail-to-rail output capability and
is unity gain stable.
Features
The maximum operating voltage range is from 4.5V to
19V. It can be configured for single or dual supply
operation, and typically consumes only 3mA per
amplifier. The EL5211T has an output short circuit
capability of ±300mA and a continuous output current
capability of ±65mA.
• 3mA Supply Current (per Amplifier)
The EL5211T features a high slew rate of 100V/µs, and
fast settling time. Also, the device provides common
mode input capability beyond the supply rails,
rail-to-rail output capability, and a bandwidth of 60MHz
(-3dB). This enables the amplifiers to offer maximum
dynamic range at any supply voltage. These features
make the EL5211T an ideal amplifier solution for use in
TFT-LCD panels as a VCOM driver or static gamma
buffer, and in high speed filtering and signal
conditioning applications. Other applications include
battery power and portable devices, especially where
low power consumption is important.
• Rail-to-rail Output Swing
The EL5211T is available in a thermally enhanced 8 Ld
HMSOP package, and a thermally enhanced 8 Ld DFN
package. Both feature a standard operational amplifier
pinout. The device operates over an ambient
temperature range of -40°C to +85°C.
• Data Acquisition
• 60MHz (-3dB) Bandwidth
• 4.5V to 19V Maximum Supply Voltage Range
• 100V/µs Slew Rate
• ±65mA Continuous Output Current
• ±300mA Output Short Circuit Current
• Unity-gain Stable
• Beyond the Rails Input Capability
• Built-in Thermal Protection
• -40°C to +85°C Ambient Temperature Range
• Pb-Free (RoHS Compliant)
Applications*(see page 13)
• TFT-LCD Panels
• VCOM Amplifiers
• Static Gamma Buffers
• Drivers for A/D Converters
• Video Processing
• Audio Processing
• Active Filters
• Test Equipment
• Battery-powered Applications
• Portable Equipment
10
+15V
+15V
EL5211T
+
VS+
0.1µF
VINA-
VOUTB
VINA+
VINB-
0
4
4.7µF
PANEL
CAPACITANCE
VINB+
2
FIGURE 1. TYPICAL TFT-LCD VCOM APPLICATION
1kΩ
0
-2
-6
TFT-LCD
PANEL
FN6893 Rev 0.00
May 12, 2010
VS = ±5V
AV = 1
CL = 1.5pF
RL || 1kΩ (PROBE)
-4
0
VS-
6
GAIN (dB)
VOUTA
8
PANEL
CAPACITANCE
560Ω
150Ω
-8
-10
100k
1M
10M
FREQUENCY (Hz)
100M
FIGURE 2. FREQUENCY RESPONSE FOR VARIOUS RL
Page 1 of 15
EL5211T
Pin Configuration
EL5211T
(8 LD DFN)
TOP VIEW
EL5211T
(8 LD HMSOP)
TOP VIEW
VOUTA 1
VINA- 2
8 VS+
+
VINA+ 3
+
VS- 4
VOUTA 1
7 VOUTB
VINA- 2
6 VINB-
VINA+ 3
8 VS+
PD
6 VINB-
VS- 4
5 VINB+
7 VOUTB
5 VINB+
THERMAL PAD IS ELECTRICALLY
CONNECTED TO VS-
THERMAL PAD IS ELECTRICALLY
CONNECTED TO VS-
Pin Descriptions
PIN NUMBER
(HMSOP, DFN)
PIN
NAME
1
VOUTA
FUNCTION
EQUIVALENT CIRCUIT
Amplifier A output
(Reference Circuit 1)
2
VINA-
Amplifier A inverting input
(Reference Circuit 2)
3
VINA+
Amplifier A non-inverting input
(Reference Circuit 2)
4
VS-
5
VINB+
Negative power supply
Amplifier B non-inverting input
(Reference Circuit 2)
6
VINB-
Amplifier B inverting input
(Reference Circuit 2)
7
VOUTB
Amplifier B output
(Reference Circuit 1)
8
VS+
Pad
PD
Positive power supply
Functions as a heat sink. Electrically connected to
VS-. Connect the thermal pad to VS- plane on the
PCB for optimum thermal performance.
VS+
VS+
VOUTx
VINx
VS-
GND
VS-
CIRCUIT 1
CIRCUIT 2
Ordering Information
PART NUMBER
(Notes 2, 3)
PART
MARKING
PACKAGE
(Pb-Free)
PKG.
DWG. #
EL5211TILZ-T13 (Note 1)
11T
8 Ld DFN
L8.2x3
EL5211TIYEZ
BBBNA
8 Ld HMSOP
MDP0050
EL5211TIYEZ-T7 (Note 1)
BBBNA
8 Ld HMSOP
MDP0050
EL5211TIYEZ-T13 (Note 1)
BBBNA
8 Ld HMSOP
MDP0050
NOTES:
1. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach
materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for EL5211T. For more information on MSL please see
techbrief TB363.
FN6893 Rev 0.00
May 12, 2010
Page 2 of 15
EL5211T
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . .+19.8V
Input Voltage Range (VINx+, VINx-) . . . VS- - 0.5V, VS+ + 0.5V
Input Differential Voltage (VINx+ - VINx-) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . (VS+ + 0.5V)-(VS- - 0.5V)
Maximum Continuous Output Current . . . . . . . . . . . ±65mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . 3000V
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
8 Ld HMSOP (Notes 4, 5) . . . . . . .
62
13
8 Ld DFN (Notes 4, 5). . . . . . . . . .
58
8
Storage Temperature . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . -40°C to +85°C
Maximum Junction Temperature . . . . . . . . . . . . . . . +150°C
Power Dissipation . . . . . . . . . . . . . . . See Figures 34 and 35
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach”
features. See Tech Brief TB379.
5. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 1k to 0V, TA = +25°C, Unless Otherwise Specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
5
18
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
TCVOS
Average Offset Voltage Drift (Note 6)
8 Ld HMSOP package
13
µV/°C
8 Ld DFN package
9
µV/°C
VCM = 0V
2
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VIN from -5.5V to 5.5V
50
73
dB
AVOL
Open-Loop Gain
-4.5V VOUTx 4.5V
62
78
dB
-5.5
60
nA
+5.5
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = +5mA
ISC
Short-Circuit Current
VCM = 0V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
4.85
-4.95 -4.85
V
4.95
V
±300
mA
±65
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current
VCM = 0V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from ±2.25V to ±9.5V
4.5
5.5
60
19
V
7.5
mA
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 7)
-4.0V VOUTx 4.0V, 20% to 80%
100
V/µs
tS
Settling to +0.1% (Note 8)
AV = +1, VOUTx = 2V step,
RL = 1k1k (probe), CL = 1.5pF
85
ns
BW
-3dB Bandwidth
RL = 1kCL = 1.5pF
60
MHz
FN6893 Rev 0.00
May 12, 2010
Page 3 of 15
EL5211T
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 1k to 0V, TA = +25°C, Unless Otherwise Specified. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
GBWP
Gain-Bandwidth Product
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
32
MHz
PM
Phase Margin
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
50
°
CS
Channel Separation
f = 5MHz
90
dB
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = 0V, RL = 1k to 2.5V, TA = +25°C, Unless Otherwise Specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 2.5V
TCVOS
Average Offset Voltage Drift (Note 6)
8 Ld HMSOP package
5
18
mV
11
µV/°C
8 Ld DFN package
8
µV/°C
VCM = 2.5V
2
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VIN from -0.5V to 5.5V
45
68
dB
AVOL
Open-Loop Gain
0.5V VOUTx 4.5V
62
82
dB
-0.5
60
nA
+5.5
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -4.2mA
VOH
Output Swing High
IL = +4.2mA
ISC
Short-circuit Current
VCM = 2.5V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
60
4.85
150
mV
4.94
V
±110
mA
±65
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current
VCM = 2.5V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from 4.5V to 19V
4.5
6.0
60
19
V
7.5
mA
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 7)
1V VOUTx 4V, 20% to 80%
75
V/µs
tS
Settling to +0.1% (Note 8)
AV = +1, VOUTx = 2V step,
RL = 1k1k (probe), CL = 1.5pF
90
ns
BW
-3dB Bandwidth
RL = 1kCL = 1.5pF
60
MHz
GBWP
Gain-Bandwidth Product
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
32
MHz
PM
Phase Margin
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
50
°
CS
Channel Separation
f = 5MHz
90
dB
FN6893 Rev 0.00
May 12, 2010
Page 4 of 15
EL5211T
Electrical Specifications
PARAMETER
VS+ = +18V, VS- = 0V, RL = 1k to 9V, TA = +25°C, Unless Otherwise Specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
7
18
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 9V
TCVOS
Average Offset Voltage Drift (Note 6)
8 Ld HMSOP package
14
µV/°C
8 Ld DFN package
11
µV/°C
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VIN from -0.5V to 18.5V
53
75
dB
AVOL
Open-Loop Gain
0.5V VOUTx 17.5V
62
104
dB
VCM = 9V
2
-0.5
60
nA
+18.5
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -6mA
VOH
Output Swing High
IL = +6mA
ISC
Short-circuit Current
VCM = 9V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
80
150
17.85 17.92
mV
V
±300
mA
±65
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current
VCM = 9V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from 4.5V to 19V
4.5
6.0
60
19
V
7.5
mA
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 7)
1V VOUTx 17V, 20% to 80%
100
V/µs
tS
Settling to +0.1% (Note 8)
AV = +1, VOUTx = 2V step,
RL = 1k1k (probe), CL = 1.5pF
100
ns
BW
-3dB Bandwidth
RL = 1kCL = 1.5pF
60
MHz
GBWP
Gain-Bandwidth Product
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
32
MHz
PM
Phase Margin
AV = -10, RF = 1kRG = 100
RL = 1k1k (probe), CL = 1.5pF
50
°
CS
Channel Separation
f = 5MHz
90
dB
NOTES:
6. Measured over -40°C to +85°C ambient operating temperature range. See the typical TCVOS production distribution shown in
the “Typical Performance Curves” on page 6.
7. Typical slew rate is an average of the slew rates measured on the rising (20% to 80%) and the falling (80% to 20%) edges
of the output signal.
8. Settling time measured as the time from when the output level crosses the final value on rising/falling edge to when the output
level settles within a ±0.1% error band. The range of the error band is determined by: Final Value(V)±[Full Scale(V)*0.1%].
FN6893 Rev 0.00
May 12, 2010
Page 5 of 15
EL5211T
Typical Performance Curves
10
TYPICAL
PRODUCTION
DISTRIBUTION
VS = ±5V
TA = +25°C
400
350
300
250
200
150
100
50
0
6
5
4
3
2
1
0
TYPICAL
PRODUCTION
DISTRIBUTION
8
6
4
2
0
2
6
10 14 18 22 26 30 34 38
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
FIGURE 4. INPUT OFFSET VOLTAGE DRIFT (HMSOP)
VS = ±5V
5
0
-5
-10
-50
6
10 14 18 22 26 30 34 38
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
FIGURE 5. INPUT OFFSET VOLTAGE DRIFT (DFN)
0
50
100
TEMPERATURE (°C)
150
FIGURE 6. INPUT OFFSET VOLTAGE vs TEMPERATURE
4
4.95
OUTPUT HIGH VOLTAGE (V)
VS = ±5V
3
2
1
0
-50
2
10
VS = ±5V
-40°C to +85°C
10
TYPICAL
PRODUCTION
DISTRIBUTION
7
INPUT OFFSET VOLTAGE (mV)
QUANTITY (AMPLIFIERS)
12
INPUT BIAS CURRENT (nA)
8
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
INPUT OFFSET VOLTAGE (mV)
FIGURE 3. INPUT OFFSET VOLTAGE DISTRIBUTION
VS = ±5V
-40°C to +85°C
9
QUANTITY (AMPLIFIERS)
QUANTITY (AMPLIFIERS)
450
0
50
100
150
TEMPERATURE (°C)
FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE
FN6893 Rev 0.00
May 12, 2010
VS = ±5V
IOUT = +5mA
4.94
4.93
4.92
-50
0
50
100
TEMPERATURE (°C)
150
FIGURE 8. OUTPUT HIGH VOLTAGE vs TEMPERATURE
Page 6 of 15
EL5211T
Typical Performance Curves (Continued)
VS = ±5V
IOUT = -5mA
OPEN LOOP GAIN (dB)
OUTPUT HIGH VOLTAGE (V)
-4.92
-4.93
-4.94
-4.95
-4.96
-4.97
-50
0
50
100
VS = ±5V
RL = 1kΩ
100
80
60
40
-50
150
0
TEMPERATURE (°C)
FIGURE 9. OUTPUT LOW VOLTAGE vs TEMPERATURE
SUPPLY CURRENT (mA)
SLEW RATE (V/µs)
150
2.95
VS = ±5V
RL = 1kΩ
140
120
100
80
60
-50
0
50
100
TEMPERATURE (°C)
4.0
SLEW RATE (V/µs)
3.0
2.5
8.5
FIGURE 13. SUPPLY CURRENT PER AMPLIFIER vs
SUPPLY VOLTAGE
FN6893 Rev 0.00
May 12, 2010
2.85
2.80
2.75
0
50
100
TEMPERATURE (°C)
150
140
3.5
4.5
5.5
6.5
7.5
SUPPLY VOLTAGE (±V)
2.90
FIGURE 12. SUPPLY CURRENT PER AMPLIFIER vs
TEMPERATURE
TA = +25°C
NO LOAD
INPUT AT GND
3.5
VS = ±5V
NO LOAD
INPUT AT GND
2.70
-50
150
FIGURE 11. SLEW RATE vs TEMPERATURE
SUPPLY CURRENT (mA)
100
FIGURE 10. OPEN-LOOP GAIN vs TEMPERATURE
160
2.0
2.5
50
TEMPERATURE (°C)
9.5
120
100
80
TA = +25°C
AV = 1
RL = 1kΩ
CL = 8pF
60
40
2
4
6
8
SUPPLY VOLTAGE (±V)
10
FIGURE 14. SLEW RATE vs SUPPLY VOLTAGE
Page 7 of 15
EL5211T
Typical Performance Curves (Continued)
100
120
100
80
60
40
2
4
6
8
SUPPLY VOLTAGE (±V)
80
-20
10
VS = ±5V
RF = 1kΩ, RG = 100Ω
RL = 1kΩ || 1kΩ
(PROBE)
CL = 1.5pF
-20
10
100
1k
40
10k 100k 1M
FREQUENCY (Hz)
10M
-2
100pF
47pF
10pF
5
0
-5
VS = ±5V
AV = 1
RL = 1kΩ
-20
100k
1M
10M
FREQUENCY (Hz)
100M
FIGURE 19. FREQUENCY RESPONSE FOR VARIOUS CL
FN6893 Rev 0.00
May 12, 2010
560Ω
-6
150Ω
-10
100k
1M
10M
FREQUENCY (Hz)
100M
FIGURE 18. FREQUENCY RESPONSE FOR VARIOUS RL
OUTPUT IMPEDANCE (Ω)
GAIN (dB)
0
-4
-40
100M
15
-15
-40
100M
1kΩ
2
1000
1000pF
10M
-8
20
-10
4
0
FIGURE 17. OPEN LOOP GAIN AND PHASE
10
10k 100k 1M
FREQUENCY (Hz)
VS = ±5V
AV = 1
CL = 1.5pF
RL || 1kΩ (PROBE)
6
GAIN (dB)
80
PHASE (°)
OPEN LOOP GAIN (dB)
120
40
1k
0
10
8
GAIN
100
40
FIGURE 16. OPEN LOOP GAIN AND PHASE
160
0
VS = ±5V
RF = 5kΩ, RG = 100Ω
RL = 1kΩ
CL = 8pF
0
200
20
80
20
PHASE
80
120
PHASE
40
FIGURE 15. OPEN LOOP GAIN vs SUPPLY VOLTAGE
60
160
GAIN
60
10
100
200
PHASE (°)
TA = +25°C
RL = 1kΩ
OPEN LOOP GAIN (dB)
OPEN LOOP GAIN (dB)
140
100
VS = ±5V
RF = 2kΩ
RL = 50Ω
SOURCE = 0dBm
10
1
0.1
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
FIGURE 20. CLOSED LOOP OUTPUT IMPEDANCE
Page 8 of 15
EL5211T
12
-30
10
-40
DISTORTION (dBc)
MAXIMUM OUTPUT SWING (VP-P)
Typical Performance Curves (Continued)
8
6
4
VS = ±5V
AV = 1
RL = 1kΩ
DISTORTION