EL5221
®
Data Sheet
July 25, 2007
Dual 12MHz Rail-to-Rail Input-Output
Buffer
Features
• 12MHz -3dB bandwidth
The EL5221 is a dual, low power, high voltage rail-to-rail
input-output buffer. Operating on supplies ranging from 5V to
15V, while consuming only 500µA per channel, the EL5221
has a bandwidth of 12MHz -(-3dB). The EL5221 also
provides rail-to-rail input and output ability, giving the
maximum dynamic range at any supply voltage.
The EL5221 also features fast slewing and settling times, as
well as a high output drive capability of 30mA (sink and
source). These features make the EL5221 ideal for use as
voltage reference buffers in Thin Film Transistor Liquid
Crystal Displays (TFT-LCD). Other applications include
battery power, portable devices, and anywhere low power
consumption is important.
• Unity gain buffer
• Supply voltage = 4.5V to 16.5V
• Low supply current (per buffer) = 500µA
• High slew rate = 10V/µs
• Rail-to-rail operation
• Pb-Free plus anneal available (RoHS compliant)
Applications
• TFT-LCD drive circuits
• Electronics notebooks
The EL5221 is available in space-saving 6 Ld SOT-23 and
8 Ld MSOP packages and operates over a temperature
range of -40°C to +85°C.
• Electronics games
Ordering Information
• Portable instrumentation
PART
NUMBER
PART
MARKING
PACKAGE
PKG.
DWG. #
EL5221CW-T7*
M
6 Ld SOT-23
MDP0038
EL5221CW-T7A*
M
6 Ld SOT-23
MDP0038
EL5221CWZ-T7*
(Note)
BBEA
6 Ld SOT-23
(Pb-free)
MDP0038
EL5221CWZ-T7A* BBEA
(Note)
6 Ld SOT-23
(Pb-free)
MDP0038
EL5221CY
K
8 Ld MSOP
MDP0043
EL5221CY-T7*
K
8 Ld MSOP
MDP0043
EL5221CY-T13*
K
8 Ld MSOP
MDP0043
EL5221CYZ
(Note)
BAAAJ
8 Ld MSOP
(Pb-free)
MDP0043
EL5221CYZ-T7*
(Note)
BAAAJ
8 Ld MSOP
(Pb-free)
MDP0043
EL5221CYZ-T13*
(Note)
BAAAJ
8 Ld MSOP
(Pb-free)
MDP0043
• Personal communication devices
• Personal Digital Assistants (PDA)
• Wireless LANs
• Office automation
• Active filters
• ADC/DAC buffer
Pinouts
EL5221
(6 LD SOT-23)
TOP VIEW
VINA 1
6 VOUTA
VS- 2
5 VS+
VINB 3
*Please refer to TB347 for details on reel specifications.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
4 VOUTB
EL5221
(8 LD MSOP)
TOP VIEW
VOUTA 1
NC 2
VINA 3
VS- 4
1
FN7187.2
8 VS+
7 VOUTB
6 NC
5 VINB
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002, 2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL5221
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS+ +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(Note 3)
TYP
MAX
(Note 3)
UNIT
12
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
2
TCVOS
Average Offset Voltage Drift
(Note 1)
5
IB
Input Bias Current
VCM = 0V
2
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
-4.5V ≤ VOUT ≤ 4.5V
0.995
µV/°C
50
nA
1.005
V/V
-4.85
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
Short Circuit Current
Short to GND
-4.92
4.85
4.92
V
±120
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
IS
Supply Current (Per Buffer)
No load
60
500
750
µA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
tS
Settling to +0.1%
BW
CS
10
V/µs
VO = 2V step
500
ns
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
Channel Separation
f = 5MHz
75
dB
2
7
FN7187.2
July 25, 2007
EL5221
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = 0V, RL = 10kΩ and CL = 10pF to 2.5V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(NOTE 3)
TYP
MAX
(NOTE 3)
UNIT
10
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 2.5V
2
TCVOS
Average Offset Voltage Drift
(Note 1)
5
IB
Input Bias Current
VCM = 2.5V
2
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
0.5 ≤ VOUT ≤ 4.5V
0.995
µV/°C
50
nA
1.005
V/V
150
mV
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
Short Circuit Current
Short to GND
80
4.85
4.92
V
±120
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Buffer)
No Load
60
500
750
µA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
1V ≤ VOUT ≤4V, 20% to 80%
tS
Settling to +0.1%
BW
CS
10
V/µs
VO = 2V Step
500
ns
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
Channel Separation
f = 5MHz
75
dB
3
7
FN7187.2
July 25, 2007
EL5221
Electrical Specifications
PARAMETER
VS+ = +15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(NOTE 3)
TYP
MAX
(NOTE 3)
UNIT
14
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 7.5V
2
TCVOS
Average Offset Voltage Drift
(Note 1)
5
IB
Input Bias Current
VCM = 7.5V
2
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
0.5 ≤ VOUT ≤ 14.5V
0.995
µV/°C
50
nA
1.005
V/V
150
mV
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
Short Circuit Current
Short to GND
80
14.85
14.92
V
±120
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Buffer)
No Load
60
500
750
µA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
1V ≤ VOUT ≤14V, 20% to 80%
tS
Settling to +0.1%
BW
CS
7
10
V/µs
VO = 2V Step
500
ns
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
Channel Separation
f = 5MHz
75
dB
NOTES:
1. Measured over the operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. Parts are 100% tested at +25°C. Over-temperature limits established by characterization and are not production tested.
4
FN7187.2
July 25, 2007
EL5221
Typical Performance Curves
Input Offset Voltage Distribution
Input Offset Voltage Drift
35
2000
VS=±5V
TA=25°C
VS=±5V
TA=25°C
30
Quantity (Buffers)
1200
800
400
20
15
10
5
19
17
15
13
11
9
7
1
8
10
6
4
2
0
-2
-4
-6
-8
-10
-12
12
Input Offset Voltage, TCVOS (µV/°C)
Input Offset Voltage (mV)
Input Offset Voltage vs Temperature
Input Bias Current vs Temperature
4
5
Input Bias Current (nA)
10
Input Offset Voltage (mV)
5
0
0
VS=±5V
0
-5
-10
-50
0
50
Temperature (°C)
100
2
VS=±5V
0
-2
-4
-50
150
0
50
100
150
Temperature (°C)
Output Low Voltage vs Temperature
Output High Voltage vs Temperature
-4.91
4.97
VS=±5V
IOUT=5mA
-4.92
Output Low Voltage (V)
Output High Voltage (V)
Typical
Production
Distribution
25
3
Quantity (Buffers)
1600
Typical
Production
Distribution
4.96
4.95
4.94
VS=±5V
IOUT=-5mA
-4.93
-4.94
-4.95
-4.96
4.93
-50
0
50
Temperature (°C)
5
100
150
-4.97
-50
0
50
Temperature (°C)
100
150
FN7187.2
July 25, 2007
EL5221
Typical Performance Curves
(Continued)
Slew Rate vs Temperature
Voltage Gain vs Temperature
13
1.001
12.5
VS=±5V
Slew Rate (V/µS)
Voltage Gain (V/V)
1.0005
1.0000
0.9995
VS=±5V
12
11.5
11
10.5
0.999
-50
0
50
Temperature (°C)
100
10
-50
150
Supply Current per Channel vs Temperature
150
Supply Current per Channel vs Supply Voltage
Supply Current (µA)
VS=±5V
0.45
0.4
-50
0
50
100
550
TA=25°C
450
350
250
150
5
0
Temperature (°C)
10
Supply Voltage (V)
20
15
Frequency Response for Various CL
Frequency Response for Various RL
20
5
10kΩ
0
Magnitude (Normalized) (dB)
Magnitude (Normalized) (dB)
100
650
0.5
-5
50
Temperature (°C)
0.55
Supply Current (mA)
0
1kΩ
560Ω
CL=10pF
VS=±5V
150Ω
-10
-15
100k
1M
10M
Frequency (Hz)
6
100M
10
RL=10kΩ
VS=±5V
12pF
0
50pF
-10
100pF
-20
1000pF
-30
100k
1M
10M
Frequency (Hz)
100M
FN7187.2
July 25, 2007
EL5221
Typical Performance Curves
(Continued)
Maximum Output Swing vs Frequency
Output Impedance vs Frequency
12
Maximum Output Swing (VP-P)
Output Impedance (Ω)
200
VS=±5V
TA=25°C
160
120
80
40
0
10k
100k
1M
Frequency (Hz)
10
8
4
2
0
10k
10M
PSRR vs Frequency
80
Voltage Noise (nV/√Hz)
PSRR (dB)
40
VS=±5V
TA=25°C
0
100
1k
10k
100k
Frequency (Hz)
1M
100
10
1
100
10M
Total Harmonic Distortion + Noise vs Frequency
-60
0.009
-80
X-Talk (dB)
THD+ N (%)
0.008
0.007
0.006
0.005
0.003
VS=±5V
RL=10kΩ
VIN=1VRMS
1k
10k
100k
1M
Frequency (Hz)
10M
100M
Channel Separation vs Frequency Response
0.010
0.004
10M
Input Voltage Noise Spectral Density vs Frequency
PSRR-
20
100k
1M
Frequency (Hz)
600
PSRR+
60
VS=±5V
TA=25°C
RL=10kΩ
CL=12pF
Distortion
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