EL5221CYZ-T7

EL5221 ® Data Sheet July 25, 2007 Dual 12MHz Rail-to-Rail Input-Output Buffer Features • 12MHz -3dB bandwidth The EL5221 is a dual, low power, high voltage rail-to-rail input-output buffer. Operating on supplies ranging from 5V to 15V, while consuming only 500µA per channel, the EL5221 has a bandwidth of 12MHz -(-3dB). The EL5221 also provides rail-to-rail input and output ability, giving the maximum dynamic range at any supply voltage. The EL5221 also features fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make the EL5221 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices, and anywhere low power consumption is important. • Unity gain buffer • Supply voltage = 4.5V to 16.5V • Low supply current (per buffer) = 500µA • High slew rate = 10V/µs • Rail-to-rail operation • Pb-Free plus anneal available (RoHS compliant) Applications • TFT-LCD drive circuits • Electronics notebooks The EL5221 is available in space-saving 6 Ld SOT-23 and 8 Ld MSOP packages and operates over a temperature range of -40°C to +85°C. • Electronics games Ordering Information • Portable instrumentation PART NUMBER PART MARKING PACKAGE PKG. DWG. # EL5221CW-T7* M 6 Ld SOT-23 MDP0038 EL5221CW-T7A* M 6 Ld SOT-23 MDP0038 EL5221CWZ-T7* (Note) BBEA 6 Ld SOT-23 (Pb-free) MDP0038 EL5221CWZ-T7A* BBEA (Note) 6 Ld SOT-23 (Pb-free) MDP0038 EL5221CY K 8 Ld MSOP MDP0043 EL5221CY-T7* K 8 Ld MSOP MDP0043 EL5221CY-T13* K 8 Ld MSOP MDP0043 EL5221CYZ (Note) BAAAJ 8 Ld MSOP (Pb-free) MDP0043 EL5221CYZ-T7* (Note) BAAAJ 8 Ld MSOP (Pb-free) MDP0043 EL5221CYZ-T13* (Note) BAAAJ 8 Ld MSOP (Pb-free) MDP0043 • Personal communication devices • Personal Digital Assistants (PDA) • Wireless LANs • Office automation • Active filters • ADC/DAC buffer Pinouts EL5221 (6 LD SOT-23) TOP VIEW VINA 1 6 VOUTA VS- 2 5 VS+ VINB 3 *Please refer to TB347 for details on reel specifications. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 4 VOUTB EL5221 (8 LD MSOP) TOP VIEW VOUTA 1 NC 2 VINA 3 VS- 4 1 FN7187.2 8 VS+ 7 VOUTB 6 NC 5 VINB CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2002, 2005, 2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners. EL5221 Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS+ +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (Note 3) TYP MAX (Note 3) UNIT 12 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 0V 2 TCVOS Average Offset Voltage Drift (Note 1) 5 IB Input Bias Current VCM = 0V 2 RIN Input Impedance 1 GΩ CIN Input Capacitance 1.35 pF AV Voltage Gain -4.5V ≤ VOUT ≤ 4.5V 0.995 µV/°C 50 nA 1.005 V/V -4.85 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC Short Circuit Current Short to GND -4.92 4.85 4.92 V ±120 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current (Per Buffer) No load 60 500 750 µA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) -4.0V ≤ VOUT ≤ 4.0V, 20% to 80% tS Settling to +0.1% BW CS 10 V/µs VO = 2V step 500 ns -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz Channel Separation f = 5MHz 75 dB 2 7 FN7187.2 July 25, 2007 EL5221 Electrical Specifications PARAMETER VS+ = +5V, VS- = 0V, RL = 10kΩ and CL = 10pF to 2.5V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (NOTE 3) TYP MAX (NOTE 3) UNIT 10 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 2.5V 2 TCVOS Average Offset Voltage Drift (Note 1) 5 IB Input Bias Current VCM = 2.5V 2 RIN Input Impedance 1 GΩ CIN Input Capacitance 1.35 pF AV Voltage Gain 0.5 ≤ VOUT ≤ 4.5V 0.995 µV/°C 50 nA 1.005 V/V 150 mV OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC Short Circuit Current Short to GND 80 4.85 4.92 V ±120 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Buffer) No Load 60 500 750 µA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) 1V ≤ VOUT ≤4V, 20% to 80% tS Settling to +0.1% BW CS 10 V/µs VO = 2V Step 500 ns -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz Channel Separation f = 5MHz 75 dB 3 7 FN7187.2 July 25, 2007 EL5221 Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = +25°C unless otherwise specified. DESCRIPTION CONDITION MIN (NOTE 3) TYP MAX (NOTE 3) UNIT 14 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 7.5V 2 TCVOS Average Offset Voltage Drift (Note 1) 5 IB Input Bias Current VCM = 7.5V 2 RIN Input Impedance 1 GΩ CIN Input Capacitance 1.35 pF AV Voltage Gain 0.5 ≤ VOUT ≤ 14.5V 0.995 µV/°C 50 nA 1.005 V/V 150 mV OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC Short Circuit Current Short to GND 80 14.85 14.92 V ±120 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Buffer) No Load 60 500 750 µA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) 1V ≤ VOUT ≤14V, 20% to 80% tS Settling to +0.1% BW CS 7 10 V/µs VO = 2V Step 500 ns -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz Channel Separation f = 5MHz 75 dB NOTES: 1. Measured over the operating temperature range. 2. Slew rate is measured on rising and falling edges. 3. Parts are 100% tested at +25°C. Over-temperature limits established by characterization and are not production tested. 4 FN7187.2 July 25, 2007 EL5221 Typical Performance Curves Input Offset Voltage Distribution Input Offset Voltage Drift 35 2000 VS=±5V TA=25°C VS=±5V TA=25°C 30 Quantity (Buffers) 1200 800 400 20 15 10 5 19 17 15 13 11 9 7 1 8 10 6 4 2 0 -2 -4 -6 -8 -10 -12 12 Input Offset Voltage, TCVOS (µV/°C) Input Offset Voltage (mV) Input Offset Voltage vs Temperature Input Bias Current vs Temperature 4 5 Input Bias Current (nA) 10 Input Offset Voltage (mV) 5 0 0 VS=±5V 0 -5 -10 -50 0 50 Temperature (°C) 100 2 VS=±5V 0 -2 -4 -50 150 0 50 100 150 Temperature (°C) Output Low Voltage vs Temperature Output High Voltage vs Temperature -4.91 4.97 VS=±5V IOUT=5mA -4.92 Output Low Voltage (V) Output High Voltage (V) Typical Production Distribution 25 3 Quantity (Buffers) 1600 Typical Production Distribution 4.96 4.95 4.94 VS=±5V IOUT=-5mA -4.93 -4.94 -4.95 -4.96 4.93 -50 0 50 Temperature (°C) 5 100 150 -4.97 -50 0 50 Temperature (°C) 100 150 FN7187.2 July 25, 2007 EL5221 Typical Performance Curves (Continued) Slew Rate vs Temperature Voltage Gain vs Temperature 13 1.001 12.5 VS=±5V Slew Rate (V/µS) Voltage Gain (V/V) 1.0005 1.0000 0.9995 VS=±5V 12 11.5 11 10.5 0.999 -50 0 50 Temperature (°C) 100 10 -50 150 Supply Current per Channel vs Temperature 150 Supply Current per Channel vs Supply Voltage Supply Current (µA) VS=±5V 0.45 0.4 -50 0 50 100 550 TA=25°C 450 350 250 150 5 0 Temperature (°C) 10 Supply Voltage (V) 20 15 Frequency Response for Various CL Frequency Response for Various RL 20 5 10kΩ 0 Magnitude (Normalized) (dB) Magnitude (Normalized) (dB) 100 650 0.5 -5 50 Temperature (°C) 0.55 Supply Current (mA) 0 1kΩ 560Ω CL=10pF VS=±5V 150Ω -10 -15 100k 1M 10M Frequency (Hz) 6 100M 10 RL=10kΩ VS=±5V 12pF 0 50pF -10 100pF -20 1000pF -30 100k 1M 10M Frequency (Hz) 100M FN7187.2 July 25, 2007 EL5221 Typical Performance Curves (Continued) Maximum Output Swing vs Frequency Output Impedance vs Frequency 12 Maximum Output Swing (VP-P) Output Impedance (Ω) 200 VS=±5V TA=25°C 160 120 80 40 0 10k 100k 1M Frequency (Hz) 10 8 4 2 0 10k 10M PSRR vs Frequency 80 Voltage Noise (nV/√Hz) PSRR (dB) 40 VS=±5V TA=25°C 0 100 1k 10k 100k Frequency (Hz) 1M 100 10 1 100 10M Total Harmonic Distortion + Noise vs Frequency -60 0.009 -80 X-Talk (dB) THD+ N (%) 0.008 0.007 0.006 0.005 0.003 VS=±5V RL=10kΩ VIN=1VRMS 1k 10k 100k 1M Frequency (Hz) 10M 100M Channel Separation vs Frequency Response 0.010 0.004 10M Input Voltage Noise Spectral Density vs Frequency PSRR- 20 100k 1M Frequency (Hz) 600 PSRR+ 60 VS=±5V TA=25°C RL=10kΩ CL=12pF Distortion