FK7SM-12

FK7SM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1378-0200 (Previous: MEJ02G0238-0101) Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 600 V rDS (ON) (max) : 1.63 Ω ID : 7 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 2, 4 4 1 1. 2. 3. 4. Gate Drain Source Drain 1 2 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — Ratings 600 ±30 7 21 7 21 125 – 55 to +150 – 55 to +150 4.8 Unit V V A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK7SM-12 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth(ch-c) trr Min. 600 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 1.25 3.75 5.5 1100 125 17 30 30 100 35 1.5 — — Max. — — ±10 1 4 1.63 4.89 — — — — — — — — 2.0 1.00 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 3 A, VGS = 0 V Channel to case IS = 7 A, dis/dt = –100 A/µs Performance Curves Power Dissipation Derating Curve 200 5 3 2 Maximum Safe Operating Area Power Dissipation PD (W) Drain Current ID (A) 160 tw=10µs 100µs 120 101 7 5 3 2 100 7 5 3 2 80 40 0 0 50 100 150 200 10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Tc = 25°C Single Pulse DC Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Rev.2.00 Jul 07, 2006 page 2 of 6 FK7SM-12 Output Characteristics (Typical) 20 Output Characteristics (Typical) 10 Tc = 25°C Pulse Test Drain Current ID (A) Drain Current ID (A) 16 VGS = 20V 10V 6V Tc = 25°C Pulse Test VGS = 20V 10V 6V 8 5V 12 6 PD = 125W 8 5V 4 4 PD = 125W 4V 2 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 40 On-State Resistance vs. Drain Current (Typical) 5.0 Tc = 25°C Pulse Test ID = 14A Tc = 25°C Pulse Test 32 4.0 24 3.0 VGS = 10V 20V 16 7A 8 3A 2.0 1.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 101 7 5 3 2 100 7 5 3 2 10–1 –1 10 23 5 7 100 23 5 7 101 Transfer Characteristics (Typical) 20 Drain Current ID (A) 16 Tc = 25°C VDS = 50V Pulse Test VDS = 10V Pulse Test Tc = 25°C 12 75°C 125°C 8 4 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jul 07, 2006 page 3 of 6 FK7SM-12 Capacitance vs. Drain-Source Voltage (Typical) 2 103 7 5 3 2 102 7 5 3 2 Coss Switching Characteristics (Typical) 103 7 5 Ciss Capacitance C (pF) Switching Time (ns) 3 2 102 7 5 3 2 101 10–1 23 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω t d(off) tf tr t d(on) Tch = 25°C 101 f = 1MHz 7 VGS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Crss 5 7 100 23 5 7 101 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 20 40 Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25°C ID = 7 A 16 VDS = 100V 200V Source Current IS (A) 32 12 400V 24 Tc = 125°C 8 16 75°C 8 4 25°C 0 0.8 1.6 2.4 3.2 4.0 0 0 20 40 60 80 100 0 Gate Charge Qg (nC) On-State Resistance vs. Channel Temperature (Typical) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 Source-Drain Voltage VSD (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) VGS = 10V ID = 3A Pulse Test VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Rev.2.00 Jul 07, 2006 page 4 of 6 FK7SM-12 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Diode Reverse vs. Source Currnet Characteristic (Typical) Reverce Recovery Current Irr (ns) Reverce Recovery Time trr (ns) 103 7 5 3 2 102 t rr 7 5 3 2 101 0 10 Irr 102 dis/dt = –100A/µs 7 VGS = 0V 5 VDD = 250V 3 2 101 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 23 5 7 101 Tch = 25°C Tch = 150°C 100 23 5 7 102 Channel Temperature Tch (°C) Source Current IS (A) Transient Thermal Impedance Zth(ch-c) (°C/W) Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) Reverce Recovery Current Irr (ns) 5 Transient Thermal Impedance Characteristics 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 D=1 0.5 0.2 0.1 PDM tw T D= tw T Reverce Recovery Time trr (ns) 3 2 t rr 102 7 5 3 2 101 7 5 101 5 IS = 7A VGS = 0V 3 VDD = 250V 2 101 7 5 3 2 100 Tch = 25°C Tch = 150°C 7 5 23 5 7 103 Irr 23 57 102 Single Pulse 10–2 –42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 10 Source Current dis/dt (–A/µs) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.2.00 Jul 07, 2006 page 5 of 6 FK7SM-12 Package Dimensions Package Name TO-3P* JEITA Package Code SC-65 RENESAS Code PRSS0004ZB-A Previous Code  MASS[Typ.] 4.8g Unit: mm 15.9Max 4.5 1.5 5.0 φ3.2 2 2 4 20.0 4.4 1.0 19.5Min 0.6 5.45 5.45 2.8 4 Ordering Information Lead form Straight type Standard packing Static electricity prevention bag Quantity 200 Standard order code Type name Standard order code example FK7SM-12 Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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