H7N0607DSTL

H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS(on) = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 12 S 12 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note3 IAP EAR Note3 PchNote2 Tch Tstg Rating 60 ±20 20 80 20 8 5.48 25 150 –55 to +150 Unit V V A A A A mj W °C °C Rev.3.00, Jan.27.2005, page 1 of 8 H7N0607DL, H7N0607DS Electrical Characteristics (Ta = 25°C) Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer admittance Total gate charge Gate to source charge Gate to drain charge Turn-off delay time Rise time Body-drain diode forward voltage Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 11 — — — — — — — — — — — — Typ — — — — — 26 40 18 1100 160 90 21 4 5 20 90 65 15 0.93 25 Max — — ±10 10 2.5 34 56 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 VNote4 ID = 10 A, VGS = 4.5 VNote4 ID = 10 A, VDS = 10 VNote4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 20 A VGS = 10 V, ID = 10 A RL = 3.0 Ω Rg = 4.7 Ω IF = 20 A, VGS = 0Note4 IF = 20 A, VGS = 0 diF / dt = 100 A / µs Rev.3.00, Jan.27.2005, page 2 of 8 H7N0607DL, H7N0607DS Main Characteristics Power vs. Temperature Derating 50 Pch (W) Maximum Safe Operation Area 100 30 Drain Current ID (A) PW D C O pe 10 = 10 m 40 30 1m s( 1 0µ 10 µs s 10 3 1 0.3 0.1 0.03 0.01 Ta = 25°C 0.1 0.3 1 s ot ) ra Channel Dissipation tio sh n (T c = 20 10 Operation in this area is limited by RDS(on) 25 °C ) 0 50 100 Case Temperature 150 Tc (°C) 200 3 10 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 Drain Current ID (A) Typical Transfer Characteristics 50 Drain Current ID (A) VGS = 10 V 6.0 V Pulse Test 5.0 V 4.5 V 4V 3.5 V VDS = 10 V Pulse Test 40 Tc = –40°C 25°C 150°C 40 30 30 20 20 10 2V 0 2 4 6 8 10 10 0 2 4 6 8 VGS (V) 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 300 100 VGS = 4.5 V 30 10 V 10 3 1 0.1 0.4 Drain to Source Voltage 0.3 ID = 10 A 0.2 5A 0.1 2A 0 12 4 8 Gate to Source Voltage 16 VGS 20 (V) 1 0.3 3 Drain Current 10 ID 30 (A) 100 Rev.3.00, Jan.27.2005, page 3 of 8 H7N0607DL, H7N0607DS Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 80 ID = 10 A 2A 40 4.5 V 2, 5, 10 A VGS = 10 V 0 50 100 150 Tc 200 (°C) 5A Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) 100 Tc = –40°C 10 60 25°C 150°C 1 20 0 –50 VDS = 10 V Pulse Test 0.1 1 Drain Current 10 ID (A) 100 Case Temperature 1000 Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time di / dt = 100 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss 1000 300 100 Coss 300 100 30 10 3 1 0.1 0.3 1 3 10 IDR 30 (A) 100 Reverse Drain Current Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics Dynamic Input Characteristics (V) ID = 30 A 80 VDD = 50 V 25 V 10 V VDS VGS VGS 16 (V) 100 20 1000 300 100 30 10 3 1 0.1 tr VGS = 10 V, VDS = 30 V PW = 5 µs, duty < 1 % Rg = 4.7 Ω 0.3 3 1 Drain Current 10 30 ID (A) 100 tf td(off) td(on) tf tr Drain to Source Voltage 40 8 20 VDD = 50 V 25 V 10 V 10 20 30 40 Gate Charge Qg (nc) 4 0 50 0 Rev.3.00, Jan.27.2005, page 4 of 8 Switching Time 60 12 Gate to Source Voltage t (ns) VDS H7N0607DL, H7N0607DS Reverse Drain Current vs. Source to Drain Voltage 25 IDR (A) (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 8.0 IAP = 8 A VDD = 25V duty < 0.1 % Rg > 50 Ω Repetitive Avalanche Energy EAR 10 V 20 6.4 Reverse Drain Current 15 4.8 5V 10 VGS = 0, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 VSD 2.0 (V) Source to Drain Voltage 3.2 5 1.6 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 D=1 3 0.5 0.2 Tc = 25°C 1 0.1 0.3 0.05 0.02 0.1 0.01 ho t θch - c(t) = γs (t) • θch - c θch - c = 3.125°C/ W, Tc = 25°C PDM PW T D= 0.03 0.01 10 µ 1s PW T 100 µ 1m 10 m 100 m Pulse Width PW (s) 1 10 Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Rev.3.00, Jan.27.2005, page 5 of 8 H7N0607DL, H7N0607DS Switching Time Test Circuit Switching Time Waveform Vin Monitor Rg D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off) 90% 10% Vin 10 V V DS = 30V tf Rev.3.00, Jan.27.2005, page 6 of 8 H7N0607DL, H7N0607DS Package Dimensions • H7N0607DL JEITA Package Code  RENESAS Code PRSS0004ZD-B Previous Code DPAK(L)-(2) / DPAK(L)-(2)V MASS[Typ.] 0.42g Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 5.5 ± 0.5 1.2 ± 0.3 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 • H7N0607DS JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 1.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 (0.1) (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0 – 0.25 (1.2) 2.5 ± 0.5 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Rev.3.00, Jan.27.2005, page 7 of 8 (5.1) H7N0607DL, H7N0607DS Ordering Information Part Name H7N0607DL H7N0607DSTL H7N0607DL-E H7N0607DSTL-E Quantity 100 pcs 3000 pcs 100 pcs 3000 pcs Sack Taping Sack Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Jan.27.2005, page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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