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HA17902

HA17902

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HA17902 - Quad Operational Amplifier - Renesas Technology Corp

  • 数据手册
  • 价格&库存
HA17902 数据手册
HA17902 Series Quad Operational Amplifier REJ03D0685-0100 (Previous: ADE-204-045) Rev.1.00 Jun 15, 2005 Description The HA17902 is an internal phase compensation quad operational amplifier that operates on a single-voltage power supply and is appropriate for use in a wide range of general-purpose control equipment. Features • Wide usable power-supply voltage range and single-voltage supply operation • Internal phase compensation • Wide common-mode voltage range and operation for inputs close to the 0 level Ordering Information Type No. HA17902PJ HA17902FPJ HA17902FPK Car use Application Package Code (Previous Code) PRDP0014AB-A (DP-14) PRSP0014DF-B (FP-14DAV) PRSP0014DF-B (FP-14DAV) Rev.1.00 Jun 15, 2005 page 1 of 10 HA17902 Series Pin Arrangement Vout1 Vin(–)1 Vin(+)1 VCC Vin(+)2 Vin(–)2 Vout2 1 2 3 4 5 6 7 (Top view) – + + 14 Vout4 1 – + + 4 – 13 Vin(–)4 12 Vin(+)4 11 GND – 10 Vin(+)3 9 8 Vin(–)3 Vout3 2 3 Circuit Structure (1/4) Q5 Vin(−) Q2 Q1 Q3 Q4 Q6 C Q7 R1 Vin(+) Q11 Q10 Q8 Q9 Q12 Q13 Vout Rev.1.00 Jun 15, 2005 page 2 of 10 HA17902 Series Absolute Maximum Ratings (Ta = 25°C) Item Power supply voltage Sink current Allowable power dissipation Common-mode input voltage Differential-mode input voltage Operating temperature Storage temperature Symbol VCC Io sink PT VCM Vin(diff) Topr Tstg HA17902PJ 28 50 1 625* –0.3 to VCC ±VCC –40 to +85 –55 to +125 HA17902 FPJ 28 50 2 625* –0.3 to VCC ±VCC –40 to +85 –55 to +125 HA17902FPK 28 25 2 625* –0.3 to VCC ±VCC –40 to +125 –55 to +150 Unit V mA mW V V °C °C Notes: 1. These are the allowable values up to Ta = 50°C. Derate by 8.3mW/°C above that temperature. 2. See notes on SOP Package Usage in Reliability section. Electrical Characteristics 1 (VCC = + 15V, Ta = 25°C) Item Input offset voltage Input offset current Input bias current Power-supply rejection ratio Voltage gain Common-mode rejection ratio Common-mode input voltage range Maximum output voltage amplitude Output voltage Symbol VIO IIO IIB PSRR AVD CMR VCM VOP-P VOH1 VOH2 VOL1 VOL2 Output source current Output sink current Supply current Slew rate Channel separation Io source Io sink ICC SR CS Min — — — — 75 — –0.3 — 13.2 12 — — 15 3 — — — Typ 3 5 30 93 90 80 — 13.6 13.6 13.3 0.8 1.1 — 9 0.8 0.19 120 Max 8 50 500 — — — 13.5 — — — 1 1.8 — — 2 — — Unit mV nA nA dB dB dB V V V V V V mA mA mA V/µs dB Test Conditions VCM = 7.5V, RS = 50Ω, Rf = 5kΩ – + IIO = | II – II |, VCM = 7.5V VCM = 7.5V f = 100Hz, RS = 1kΩ, Rf = 100kΩ RS = 1kΩ, Rf = 100kΩ, RL = ∞ RS = 50Ω, Rf = 5kΩ RS = 1kΩ, Rf = 100kΩ, f = 100Hz f = 100Hz, RS = 1kΩ, Rf = 100kΩ, RL = 20kΩ IOH = –1mA IOH = –10mA IOL = 1mA IOL = 10mA VOH = 10V VOL = 1V Vin = GND, RL = ∞ f = 1.5kHz, VCM = 7.5V, RL = ∞ f = 1kHz Electrical Characteristics 2 (VCC = + 15V, Ta = – 40 to 125°C) Item Input offset voltage Input offset current Input bias current Common-mode input voltage range Output voltage Supply current Symbol VIO IIO IIB VCM VOH VOL ICC Min — — — 0 13.0 — — Typ — — — — — — — Max 8 200 500 13.0 — 1.3 4 Unit mV nA nA V V V mA Test Conditions VCM = 7.5V, RS = 50Ω, Rf = 5kΩ – + VCM = 7.5V , IIO = | II – II | VCM = 7.5V RS = 1kΩ, Rf = 100kΩ, f = 100Hz IOH = –1mA IOL = 1mA Vin = GND, RL = ∞ Rev.1.00 Jun 15, 2005 page 3 of 10 HA17902 Series Test Circuits 1. Input offset voltage (VIO), input offset current (IIO), and Input bias current (IIB) test circuit Rf 5k SW1 RS 50 RS 50 R 10k R 10k SW2 – VCC Vout + Rf 5k VCM V SW1 On Off On Off SW2 On Off Off On VO VO1 VO2 VO3 VO4 VCM = 1 V 2 CC VIO = IIO = IIB = VO1 1 + Rf / RS VO2 − VO1 R(1 + Rf / RS) | VO4 − VO3 | 2 . R(1 + Rf / RS) (mV) (nA) (nA) 2. Common-mode rejection ratio (CMR) test circuit CMR = 20 log VIN . Rf VO . RS (dB) Rf 5.0k RS 50 VCC – + Vout Vin RS 50 Rf 5.0k 3. Supply current (ICC) test circuit A – Vout + VCC Rev.1.00 Jun 15, 2005 page 4 of 10 HA17902 Series 4. Voltage gain (AVD), slew rate (SR), common-mode input voltage range (VCM), and maximum output voltage amplitude (VOP-P) test circuit. Vin Rf 100k 40dB 47µ –+ R 51k VCC – D.U.T + Vout SW1 Rf 20k Vin RS 1k V2 RS 1k Rf 100k V1 + + – 47µ – 47µ (1) AVD: RS = 1kΩ, Rf = 100kΩ, RL = ∞, V1 = V2 = 1/2 VCC V AVD = 20 log O + 40 (dB) VIN (2) SR: f = 1.5kHz, RL = ∞, V1 = V2 = 1/2 VCC 10k + – A VCC VOH (3) VCM: RS = 1kΩ, Rf = 100kΩ, f = 100Hz, V1 = 1/2 VCC, RL = ∞, and the value of V2 just slightly prior to the point where the output waveform changes. (4) VOP-P:RS = 1kΩ, Rf = 100kΩ, RL: 20kΩ, f = 100Hz, VOP-P = VOH ↔ VOL [VP-P] 5. Output source current (Iosource) test circuit Io source: VOH = 10V V SR = V [V/µs] T T 6. Output sink current (Iosink) test circuit Io sink: VOL = 1V 10k – + A VCC VOH Rev.1.00 Jun 15, 2005 page 5 of 10 HA17902 Series Characteristics Curve Input Bias Current vs. Power-Supply Voltage Characteristics 100 Ta = 25°C Vin = 7.5 V 75 90 80 Input Bias Current vs. Ambient Temperature Characteristics Input Bias Current IIB (nA) Input Bias Current IIB (nA) 30 70 60 50 40 30 20 10 50 25 0 10 20 0 –55 –35 –15 5 25 45 65 85 105 125 Power-Supply Voltage VCC (V) Ambient Temperature Ta (°C) Output Sink Current vs. Ambient Temperature Characteristics 90 90 Output Source Current vs. Ambient Temperature Characteristics Output Sink Current Io sink (mA) 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 Output Sink Current Io source (mA) VCC = 15 V VOH = 1 V 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 VCC = 15 V VOH = 10 V 85 105 125 85 105 125 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Voltage Gain vs. Frequency Characteristics 160 140 VCC = 15 V Ta = 25°C 160 140 Voltage Gain vs. Power-Supply Voltage Characteristics Ta = 25°C Voltage Gain AVD (dB) 120 100 80 60 40 20 0 1 10 100 1k 10 k 100 k 1M Voltage Gain AVD (dB) 120 100 80 60 40 20 0 10 20 30 Frequency f (Hz) Power-Supply Voltage VCC (V) Rev.1.00 Jun 15, 2005 page 6 of 10 HA17902 Series Maximum Output Voltage Amplitude vs. Frequency Characteristics 20 4 Ta = 25°C Vin = GND Supply Current vs. Power-Supply Voltage Characteristics Maximum Output Voltage Amplitude VOP-P (VP-P) Supply Current ICC (mA) 15 3 10 2 5 1 0 1k 0 10 k 100 k 1M 10 20 30 Frequency f (Hz) Power-Supply Voltage VCC (V) Slew Rate vs. Power-Supply Voltage Characteristics 0.8 V1 = V2 = 1/2 VCC f = 1.5 kHz 120 Common-Mode Rejection Ratio vs. Frequency Characteristics Common-Mode Rejection Ratio CMR (dB) VCC = 15 V Ta = 25°C RS = 50 Ω 100 80 60 40 20 0 100 Slew Rate SR (V/µs) 0.6 0.4 0.2 0 10 20 30 1k 10 k 100 k 1M Power-Supply Voltage VCC (V) Frequency f (Hz) Rev.1.00 Jun 15, 2005 page 7 of 10 HA17902 Series HA17902 Application Examples The HA17902 is a quad operational amplifier, and consists of four operational amplifier circuits and one bias current circuit. It features single-voltage power supply operation, internal phase compensation, a wide zero-cross bandwidth, a low input bias current, and a high open-loop gain. Thus the HA17902 can be used in a wide range of applications. This section describes several applications using the HA17902. 1. Noninverting Amplifier Figure 1 shows the circuit diagram for a noninverting amplifier. The voltage gain of this amplifier is given by the following formula. Vout R2 =1+ Vin R1 10k +Vin + Vout – R2 1M 10k R1 Figure 1 Noninverting Amplifier 2. Summing Amplifier Since the circuit shown in figure 2 applies +V1 and +V2 to the noninverting input and +V3 and +V4 to the inverting input, the total output will be Vout = V1 + V2 – V3 – V4. +V1 +V2 R 100k R 100k R 100k R 100k Vin(+) 100k + HA17902 VCC Vout – Vin(–) R 100 k +V3 +V4 Figure 2 Summing Amplifier Rev.1.00 Jun 15, 2005 page 8 of 10 HA17902 Series 3. High Input Impedance DC Differential Amplifier The circuit shown in figure 3 is a high input impedance DC differential amplifier. This circuit’s common-mode rejection ratio (CMR) depends on the matching between the R1/R2 and R4/R3 resistance ratios. This amplifier’s output is given by the following formula. Vout = 1 + R4 R3 (V2 – V1) R2 R1 100kΩ V1 V2 100kΩ – + R3 100kΩ – + R4 100kΩ Vout Figure 3 High Input Impedance DC Differential Amplifier 4. Voltage Controlled Oscillator Figure 4 shows an oscillator circuit in which the amplifier A1 is an integrator, the amplifier A2 is a comparator, and transistor Q1 operates as a switch that controls the oscillator frequency. If the output Vout1 is at the low level, this will cut off transistor Q1 and cause the A1 inverting input to go to a higher potential than the noninverting input. Therefore, A1 will integrate this negative input state and its output level will decrease. When the A1 integrator output becomes lower than the A2 comparator noninverting input level (VCC/2) the comparator output goes high. This turns on transistor Q1 causing the integrator to integrate a positive input state and for its output to increase. This operation generates a square wave on Vout1 and a triangular wave on Vout2. C 0.05µF 100k +VC R 100k 51k R/2 50k Q1 VCC – + A1 – + VCC A2 VCC/2 HA17902 Vout1 Vout2 HA17902 51k 10k Figure 4 Voltage Controlled Oscillator Rev.1.00 Jun 15, 2005 page 9 of 10 HA17902 Series Package Dimensions JEITA Package Code P-DIP14-6.3x19.2-2.54 RENESAS Code PRDP0014AB-A Previous Code DP-14 MASS[Typ.] 0.97g D 14 8 1 b3 7 Z Reference Symbol E Dimension in Millimeters Min Nom 7.62 19.2 6.3 20.32 7.4 5.06 0.51 0.38 0.48 1.3 0.20 0° 2.29 2.54 0.25 0.35 15° 2.79 2.79 2.54 0.58 Max e1 D E A A1 bp b3 c e bp L A A1 θ e1 c θ e Z L JEITA Package Code P-SOP14-5.5x10.06-1.27 RENESAS Code PRSP0014DF-B Previous Code FP-14DAV MASS[Typ.] 0.23g *1 D 8 F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 14 bp HE E Index mark *2 c Reference Symbol Dimension in Millimeters Min Nom 10.06 5.50 Max 10.5 Terminal cross section ( Ni/Pd/Au plating ) 1 Z e *3 D E A2 A1 0.00 7 bp x M L1 0.10 0.20 2.20 A bp b1 c c A 1 0.34 0.40 0.46 0.15 0.20 0.25 θ HE 0° 7.50 7.80 1.27 8° 8.00 θ A1 e x y y L 0.12 0.15 1.42 0.50 1 Detail F Z L L 0.70 1.15 0.90 Rev.1.00 Jun 15, 2005 page 10 of 10 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
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